Abstract: A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.

Abstract: A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.

Abstract: A solid element device includes a solid element, an electric power receiving and supplying part for receiving electric power from and supplying the electric power to the solid element, and an inorganic sealing material for sealing the solid element. The inorganic sealing material includes a low melting glass selected from SiO2—Nb2O5-based, B2O3—F-based, P2O5—F-based, P2O5—ZnO-based, SiO2—B2O3—La2O3-based, and SiO2—B2O3-based low melting glasses.

Abstract: A solid element device includes a solid element, an electric power receiving and supplying part for receiving electric power from and supplying the electric power to the solid element, and an inorganic sealing material for sealing the solid element. The inorganic sealing material includes a low melting glass selected from SiO2—Nb2O5-based, B2O3—F-based, P2O5—F-based, P2O5—ZnO-based, SiO2—B2O3—La2O3-based, and SiO2—B2O3-based low melting glasses.

Abstract: A method for manufacturing a solid element device, which comprises providing a glass-containing Al2O3 substrate (3) having a GaN based LED element (2) placed thereon, setting a P2O5—ZnO based low melting point glass in parallel with the substrate, and carrying out a press working at a temperature of 415° C. or higher under a pressure of 60 kgf in a nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 109 poise, and is adhered via an oxide formed on the surface of the glass-containing Al2O3 substrate (3). A solid element device manufactured by the above method can be manufactured through a glass sealing working at a low temperature and also has a highly reliable sealing structure.

Abstract: A submount for a light emitting diode and its manufacturing method, the submount including a reflector and having a compact size. The submount for the light emitting diode comprises a Si base substrate having input/output terminals formed on a front side thereof, and a Si reflector having a sloped through hole and a reflecting film formed at least on a slope defining the through hole. The Si reflector is mounted on the Si base substrate and is fixedly joined to the Si base substrate. The Si reflector and the Si base substrate are joined to each other by a thin film solder.

Abstract: A light emitting device has a light emitting element portion that radiates light with a predetermined wavelength, and a wavelength conversion portion that surrounds a phosphor to be excited by the light with the predetermined wavelength with a transparent and non-moisture permeability material in the form of laminae. Further, a light emitting device has a plurality of LED elements disposed on a same plane, and a wavelength conversion portion that comprises a flat transparent base member that is disposed opposite to the plurality of LED elements and a phosphor layer that is of a phosphor to be excited by light emitted from the LED element and is formed like a film on the base member. The phosphor layer includes part with no phosphor in plane.

Abstract: A light emitting device has: a light emitting element; a lead that is electrically connected to the light emitting element at its one end and serves as a terminal to supply a power source to the light emitting element; a metal base that the light emitting element is mounted thereon and radiates heat of the light emitting element; and a sealing member that is of transparent resin or glass and covers the light emitting element. The lead is secured to the metal base by a heat-resisting insulating member with a thermal expansion coefficient nearly equal to that of the metal base.

Abstract: A method for manufacturing a solid element device, which comprises providing a glass-containing Al2O3 substrate (3) having a GaN based LED element (2) placed thereon, setting a P2O5—ZnO based low melting point glass in parallel with the substrate, and carrying out a press working at a temperature of 415° C. or higher under a pressure of 60 kgf in a nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 109 poise, and is adhered via an oxide formed on the surface of the glass-containing Al2O3 substrate (3). A solid element device manufactured by the above method can be manufactured through a glass sealing working at a low temperature and also has a highly reliable sealing structure.

Abstract: A submount for a light emitting diode and its manufacturing method, the submount including a reflector and having a compact size. The submount for the light emitting diode comprises a Si base substrate having input/output terminals formed on a front side thereof, and a Si reflector having a sloped through hole and a reflecting film formed at least on a slope defining the through hole. The Si reflector is mounted on the Si base substrate and is fixedly joined to the Si base substrate. The Si reflector and the Si base substrate are joined to each other by a thin film solder.

Abstract: A light emitting device has: a light emitting element; a lead that is electrically connected to the light emitting element at its one end and serves as a terminal to supply a power source to the light emitting element; a metal base that the light emitting element is mounted thereon and radiates heat of the light emitting element; and a sealing member that is of transparent resin or glass and covers the light emitting element. The lead is secured to the metal base by a heat-resisting insulating member with a thermal expansion coefficient nearly equal to that of the metal base.

Abstract: A light emitting device has a light emitting element portion that radiates light with a predetermined wavelength, and a wavelength conversion portion that surrounds a phosphor to be excited by the light with the predetermined wavelength with a transparent and non-moisture permeability material in the form of laminae. Further, a light emitting device has a plurality of LED elements disposed on a same plane, and a wavelength conversion portion that comprises a flat transparent base member that is disposed opposite to the plurality of LED elements and a phosphor layer that is of a phosphor to be excited by light emitted from the LED element and is formed like a film on the base member. The phosphor layer includes part with no phosphor in plane.

Abstract: A method of fabricating an LED lens array which uses light of the constituent LEDs of the LED array as a light source for directly forming lenses on the LED array. This simplifies the fabrication process and decreases attenuation. The method involves depositing a mask in a desired pattern upon a substrate member bearing an n-type conductivity layer and, subsequently, forming a p-n junction therein by diffusion of an impurity into the n-type conductivity region to form a p-type conductivity region in a portion thereof. Following the application of electrodes and the deposition of a protective layer upon the resultant structure, a forward bias is applied to the electrodes. This results in the emission of light which is used to form a convex lens on the structure by optical chemical vapor deposition.

Abstract: A light-emitting device in which the increase in the intensity of the emitted light is linear with respect to the increase in current, thereby facilitating current-based control of the light intensity. In the device, this is achieved by providing a high-resistance region, or a furrow, between the electrode on the semiconductor surface and the portion of the device p-n junction that is exposed on the surface.

Abstract: A light-emitting device in which impurity concentrations are varied to cause the increase in the intensity of the emitted light to be linear with respect to the increase in current, thereby facilitating current-based control of the light intensity.