Abstract: A probing apparatus has an apparatus body and a test head detachable from the apparatus body. A probe card having a plurality of probe needles to be brought into contact with a semiconductor wafer is supported by the test head. Three engaging rods are disposed on the test head around the probe card to receive the load of the test head in a distributed manner. A vertically movable work table is disposed on the apparatus body to place a substrate thereon. Two first support mechanisms and one second support mechanism are disposed on the apparatus body around the work table to support the test head such that the probe card opposes the work table. The support mechanisms detachably engage with the engaging rods and support the test head through the engaging rods. The first support mechanisms have elevating mechanisms for moving the test head in the vertical direction through the engaging rods.

Abstract: A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first step of introducing an inert gas into the processing vessel, the second step of generating a plasma of the inert gas in the processing vessel, the third step of introducing a processing gas for processing the target object into the processing vessel, and the fourth step of generating a plasma of the processing gas in the processing vessel to process the target object.