Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a holding unit that holds the electric charge generated by the photoelectric conversion unit; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; a first transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit via the holding unit.

Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a holding unit that holds the electric charge generated by the photoelectric conversion unit; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; a first transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit via the holding unit.

Abstract: An imaging element includes a first substrate provided with a photoelectric conversion unit configured to generate electric charges by photoelectric conversion and a signal line to which a signal based on the electric charges generated by the photoelectric conversion unit is output and a second substrate provided with a supply unit configured to supply a voltage to the signal line so that a voltage of the signal line does not fall below a predetermined voltage and a processing unit configured to process a signal output to the signal line, the second substrate being stacked on the first substrate.

Abstract: An imaging element includes a first substrate that is provided with a photoelectric conversion unit which generates an electric charge by photoelectric conversion, a signal line to which a signal based on the electric charge generated by the photoelectric conversion unit is output, and a supply unit which supplies a voltage to the signal line such that a voltage of the signal line does not fall below a predetermined voltage, and a second substrate that is provided with a processing unit which processes the signal output to the signal line and is stacked on the first substrate.

Abstract: An image sensor element includes: a first pixel having a first photoelectric conversion part, a first accumulation part which accumulates electric charge generated by the first photoelectric conversion part, and a first output part based on a voltage of the first accumulation part; a second pixel having a second photoelectric conversion part, a second accumulation part wherein electric charge generated by the second photoelectric conversion part, and a second output part which a second signal based on a voltage of the second accumulation part; an output line to which the first and the second output parts are connected and from which the first and second signals are output; and a control unit which is able to control the voltage of the first accumulation part to be a first voltage and ability to control the voltage of the second accumulation part to be a second voltage different from the first voltage.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An imaging element includes a first substrate that is provided with a photoelectric conversion unit which generates an electric charge by photoelectric conversion, a signal line to which a signal based on the electric charge generated by the photoelectric conversion unit is output, and a supply unit which supplies a voltage to the signal line such that a voltage of the signal line does not fall below a predetermined voltage, and a second substrate that is provided with a processing unit which processes the signal output to the signal line and is stacked on the first substrate.

Abstract: An imaging element includes a first substrate provided with a photoelectric conversion unit configured to generate electric charges by photoelectric conversion and a signal line to which a signal based on the electric charges generated by the photoelectric conversion unit is output and a second substrate provided with a supply unit configured to supply a voltage to the signal line so that a voltage of the signal line does not fall below a predetermined voltage and a processing unit configured to process a signal output to the signal line, the second substrate being stacked on the first substrate.

Abstract: An image sensor element includes: a first pixel having a first photoelectric conversion part, a first accumulation part which accumulates electric charge generated by the first photoelectric conversion part, and a first output part based on a voltage of the first accumulation part; a second pixel having a second photoelectric conversion part, a second accumulation part wherein electric charge generated by the second photoelectric conversion part, and a second output part which a second signal based on a voltage of the second accumulation part; an output line to which the first and the second output parts are connected and from which the first and second signals are output; and a control unit which is able to control the voltage of the first accumulation part to be a first voltage and ability to control the voltage of the second accumulation part to be a second voltage different from the first voltage.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor element includes: a first pixel having a first photoelectric conversion part, a first accumulation part which accumulates electric charge generated by the first photoelectric conversion part, and a first output part based on a voltage of the first accumulation part; a second pixel having a second photoelectric conversion part, a second accumulation part wherein electric charge generated by the second photoelectric conversion part, and a second output part which a second signal based on a voltage of the second accumulation part; an output line to which the first and the second output parts are connected and from which the first and second signals are output; and a control unit which is able to control the voltage of the first accumulation part to be a first voltage and ability to control the voltage of the second accumulation part to be a second voltage different from the first voltage.

Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a holding unit that holds the electric charge generated by the photoelectric conversion unit; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; a first transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit via the holding unit.

Abstract: An electrically driven vehicle includes a floor panel, a tunnel section, an electrical storage device, and an electric power line. The tunnel section is formed in a vehicle forward/rearward direction in a central portion of the floor panel in a vehicle width direction. The electrical storage device is disposed behind the tunnel section of the vehicle above the floor panel. The electric power line is disposed below the tunnel section and connected to the electrical storage device. The tunnel section has an opening portion formed in a rear end portion of the tunnel section located in front of the electrical storage device of the vehicle and through which the electric power line is inserted.

Abstract: An image sensor includes: a first photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a first output unit that outputs a first signal based on the electric charge generated by the first photoelectric conversion unit; a plurality of second photoelectric conversion units that photoelectrically convert light to generate electric charges; a plurality of second output units that output second signals based on the electric charges generated by the second photoelectric conversion units; an output line to which the first output unit and the plurality of second output units are connected, and from which at least one of the first signal and the second signals is output; a first control line for controlling the output of the first signal from the first output unit; and second control lines for controlling the outputs of the second signals from the plurality of second output units.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a holding unit that holds the electric charge generated by the photoelectric conversion unit; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; a first transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit via the holding unit.

Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a holding unit that holds the electric charge generated by the photoelectric conversion unit; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; a first transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit via the holding unit.

Abstract: An imaging element includes a first substrate that is provided with a photoelectric conversion unit which generates an electric charge by photoelectric conversion, a signal line to which a signal based on the electric charge generated by the photoelectric conversion unit is output, and a supply unit which supplies a voltage to the signal line such that a voltage of the signal line does not fall below a predetermined voltage, and a second substrate that is provided with a processing unit which processes the signal output to the signal line and is stacked on the first substrate.

Abstract: An imaging element includes a first substrate provided with a photoelectric conversion unit configured to generate electric charges by photoelectric conversion and a signal line to which a signal based on the electric charges generated by the photoelectric conversion unit is output and a second substrate provided with a supply unit configured to supply a voltage to the signal line so that a voltage of the signal line does not fall below a predetermined voltage and a processing unit configured to process a signal output to the signal line, the second substrate being stacked on the first substrate.