Abstract: An oxide ion conductor has a X3Z2(TO4)3 structure, where X is a divalent metal element, Z is a trivalent metal element, and T is a tetravalent metal element, and has a composition expressed by (X1-xAx)3(Z1-yBy)2(T1-zCz)3O12+? where the element X is Ca, Fe, Gd, Ba, Sr, Mn, and/or Mg, the element Z is Al, Cr, Fe, Mn, V, Ga, Co, Ni, Ru, Rh, and/or Ir, the element T is Si and/or Ge, an element A is La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or Sr, an element B is Zn, Mn, Co, Ru, and/or Rh, and an element C is Si, Al, Ga, and/or Sn, 0?x?0.2, 0?y?0.2, and 0?z?0.2 are satisfied, and ? is a value securing electrical neutrality.

Abstract: A coating liquid includes aluminum phosphate, a nonionic surfactant, and water and/or water-soluble solvent that dissolves or disperses the aluminum phosphate and the nonionic surfactant. An amount of the nonionic surfactant is preferably 1 vol % or more and 10 vol % or less. The nonionic surfactant is preferably at least one selected from the group consisting of ester, ether, alkylglycoside, octylphenol ethoxylate, pyrrolidone, and polyhydric alcohol. Applying such a coating liquid to a surface of a thermoelectric member, and drying and firing the coating liquid enables formation of a dense antioxidant film containing aluminum phosphate on the surface of the thermoelectric member.

Abstract: An oxide ion conductor has a X3Z2(TO4)3 structure, where X is a divalent metal element, Z is a trivalent metal element, and T is a tetravalent metal element, and has a composition expressed by (X1-xAx)3(Z1-yBy)2(T1-zCz)3O12+? where the element X is Ca, Fe, Gd, Ba, Sr, Mn, and/or Mg, the element Z is Al, Cr, Fe, Mn, V, Ga, Co, Ni, Ru, Rh, and/or Ir, the element T is Si and/or Ge, an element A is La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or Sr, an element B is Zn, Mn, Co, Ru, and/or Rh, and an element C is Si, Al, Ga, and/or Sn, 0?x?0.2, 0?y?0.2, and 0?z?0.2 are satisfied, and ? is a value securing electrical neutrality.

Abstract: A coating liquid includes aluminum phosphate, a nonionic surfactant, and water and/or water-soluble solvent that dissolves or disperses the aluminum phosphate and the nonionic surfactant. An amount of the nonionic surfactant is preferably 1 vol % or more and 10 vol % or less. The nonionic surfactant is preferably at least one selected from the group consisting of ester, ether, alkylglycoside, octylphenol ethoxylate, pyrrolidone, and polyhydric alcohol. Applying such a coating liquid to a surface of a thermoelectric member, and drying and firing the coating liquid enables formation of a dense antioxidant film containing aluminum phosphate on the surface of the thermoelectric member.

Abstract: An inorganic structure body has a free-standing structure including a fibrous member and/or a shell. The fibrous member and/or the shell include a metal and/or an inorganic material and have a three-dimensionally continuous configuration. The free-standing structure may have a structure that is based on a nonwoven fabric or a porous membrane used as a substrate.

Abstract: A thermoelectric element includes a thermoelectric member made of thermoelectric materials and having a through hole, a pipe inserted into the through hole for making fluid flow, and a soaking member provided to the side of the thermoelectric element. The pipe and the soaking member respectively also function as an electrode of the thermoelectric member. A surface of the soaking member includes a blackened surface and a mirror surface. A thermoelectric generation system includes a container having a lighting window, the thermoelectric element housed in the container, a fluid feeder for feeding fluid into the pipe, and a power consumption source that consumes electric power generated by the thermoelectric element. The thermoelectric element is housed in the container so that the blackened surface is located under the lighting window.

Abstract: A composite thermoelectric material includes: a thermoelectric material of an intermetallic compound series; and a film that is coated over the whole or a part of the surface of the thermoelectric material and contains aluminum phosphate (AlPO4) as a main component. Such a composite thermoelectric material is obtained by: applying a coating liquid obtained by dispersing or dissolving aluminum phosphate (AlPO4) into a solvent over the surface of a thermoelectric material; drying the coating liquid and obtaining a precursor film; and firing the thermoelectric material over which the precursor film is formed.

Abstract: A thermoelectric element includes a thermoelectric member made of thermoelectric materials and having a through hole, a pipe inserted into the through hole for making fluid flow, and a soaking member provided to the side of the thermoelectric element. The pipe and the soaking member respectively also function as an electrode of the thermoelectric member. A surface of the soaking member includes a blackened surface and a mirror surface. A thermoelectric generation system includes a container having a lighting window, the thermoelectric element housed in the container, a fluid feeder for feeding fluid into the pipe, and a power consumption source that consumes electric power generated by the thermoelectric element. The thermoelectric element is housed in the container so that the blackened surface is located under the lighting window.

Abstract: The n-type thermoelectric material has a composition represented by (AaBbCcDt)Co4-yFeySb12. In the composition, 0?a?0.5, 0?b?0.7, 0<c?0.5, a+b+c+t=x, 0.4?x?1.0, 0?y?0.5, a+b>0; Element A is Mg, Ca, Sr and/or Ba; Element B is Y, Sc and/or La to Lu; Element C is Al, Ga and/or In; and Element D is Zn and/or Ti. The AaBbCcDt (=Rx) satisfies Rx=[BadA?1-d]a[YbeB?1-e]b[InfC?1-f]cDt. In the formula, 0<d?1, 0?e?1, 0<f?1, ad+be>0; Element A? is the element A other than Ba; Element B? is the element B other than Yb; and Element C? is the element C other than In. The n-type thermoelectric material contains five or more kinds in total of the element A to the element D.

Abstract: The n-type thermoelectric material has a composition represented by (AaBbCcDt)Co4-yFeySb12. In the composition, 0?a?0.5, 0?b?0.7, 0<c?0.5, a+b+c+t=x, 0.4?x?1.0, 0?y?0.5, a+b>0; Element A is Mg, Ca, Sr and/or Ba; Element B is Y, Sc and/or La to Lu; Element C is Al, Ga and/or In; and Element D is Zn and/or Ti. The AaBbCcDt (=Rx) satisfies Rx=[BadA?1-d]a[YbeB?1-e]b[InfC?1-f]cDt. In the formula, 0<d?1, 0?e?1, 0<f?1, ad+be>0; Element A? is the element A other than Ba; Element B? is the element B other than Yb; and Element C? is the element C other than In. The n-type thermoelectric material contains five or more kinds in total of the element A to the element D.

Abstract: An electrode for a photovoltaic device includes a Mo layer and a sulfurization-resistant layer formed on the Mo layer. The sulfurization-resistant layer contains at least one element X selected from a group consisting of Nb, Ti, Ta, Au, V, Mn, and W. A molar ratio of the element X to Mo contained in the sulfurization-resistant layer preferably satisfies X/(Mo+X)>about 0.5. A thickness (initial thickness) of the sulfurization-resistant layer before being exposed to sulfurizing atmosphere is preferably about 3 to about 200 nm.

Abstract: An electrode for a photovoltaic device includes a Mo layer and a sulfurization-resistant layer formed on the Mo layer. The sulfurization-resistant layer contains at least one element X selected from a group consisting of Nb, Ti, Ta, Au, V, Mn, and W. A molar ratio of the element X to Mo contained in the sulfurization-resistant layer preferably satisfies X/(Mo+X)>about 0.5. A thickness (initial thickness) of the sulfurization-resistant layer before being exposed to sulfurizing atmosphere is preferably about 3 to about 200 nm.

Abstract: A compound semiconductor contains main constituent elements all of which satisfy the relationship (Cu1-wAw)2(1+a)(Zn1-xBx)1+b(Sn1-yCy)1+c(Sn1-zSez)4(1+d) and having a CZTSX-based compound as a main phase, where ?0.3?a?0.3, ?0.3 ?b?0.3, ?0.3?c?0.3, ?0.3?d?0.3, 0?w<0.5, 0?x <0.5, 0?y<0.5, 0?z<1.0 and 0<x+y+z+w. The element A is at least one element selected from the group consisting of group Ia elements, group IIa elements, group Ib elements (excluding Cu) and group IIb elements. The element B is at least one element selected from the group consisting of group IIa elements and group Ib elements. The element C is at least one element selected from the group consisting of Zn, group IIIb elements and group IVb elements. A compound in which x=y=z=0 and the element A is Ag, and a compound in which x=y=w=0 are_excluded from the formula.

Abstract: The present invention provides a thermoelectric material and a method of manufacturing it. The thermoelectric material contains a half-Heusler compound including a composition represented by: (Ti1?aAa)1+x(Ni1?bBb)1+y(Sn1?cCc) where 0?a<0.1, 0?b<0.1 and 0?c<0.1; ?0.1?x?0.2 and 0<y?0.2; A is one or more elements selected from the group consisting of group IIIa elements, group IVa elements (excluding Ti), group Va elements and rare earth elements; B is one or more elements selected from the group consisting of group VIIIa elements (excluding Ni) and group Ib elements; and C is one or more elements selected from the group consisting of group IIIb elements, group IVb elements (excluding Sn) and group Vb elements, wherein amounts of Zr substitution and Hf substitution at Ti sites of the half-Heusler compound are less than 1 at %, respectively.

Abstract: The present invention provides a thermoelectric material and a method of manufacturing it. The thermoelectric material contains a half-Heusler compound including a composition represented by: (Ti1-aAa)1+x(Ni1-bBb)1+y(Sn1-cCc) where 0?a<0.1, 0?b<0.1 and 0?c<0.1; ?0.1?x?0.2 and 0<y?0.2; A is one or more elements selected from the group consisting of group IIIa elements, group IVa elements (excluding Ti), group Va elements and rare earth elements; B is one or more elements selected from the group consisting of group VIIIa elements (excluding Ni) and group Ib elements; and C is one or more elements selected from the group consisting of group IIIb elements, group IVb elements (excluding Sn) and group Vb elements, wherein amounts of Zr substitution and Hf substitution at Ti sites of the half-Heusler compound are less than 1 at %, respectively.

Abstract: A photocatalytic material, which exhibits photocatalytic activity when exposed to visible light, the material containing Ti—O—N containing nitrogen in lattices of titanium oxide crystal.

Abstract: A photocatalytic material having titanium oxide crystals and anions X incorporated therein, which is prepared by at least one of a method comprising substituting anions X for some of the oxygen sites of titanium oxide crystals, a method comprising doping anions X between lattices of a titanium crystal and a method comprising doping grain boundaries of titanium oxide, or a combination of these method. The photocatalytic material has acquired a new energy level formed in a band gap of titanium oxide, which results in its exhibition of a photocatalytic activity by absorbing visible lights. The photocatalytic material can thus exhibit a satisfactory photocatalytic activity under sunlight and also in a room with a fluorescent lamp.

Abstract: A Ti—O—N film is formed on an SiO2 substrate by sputtering. For example, TiO2 is used as a target and nitrogen gas is introduced into the atmosphere. Crystallization is carried out by a post-sputtering heat treatment. Then a charge separation material such as Pt is supported on the Ti—O—N film. With the fabricated TiO2 crystals, the Ti—O—N film containing nitrogen exhibits a good catalytic reaction by using visible light as acting light. Since the charge separation material captures electrons or positive holes, recombination of electrons and positive holes is effectively prevented, and consequently more efficient photocatalytic reaction is performed. It is preferable to form a photocatalyst material film (Ti—Cr—O—N film) by sputtering the SiO2 substrate by use of TiO2 and Cr as the target in a nitrogen atmosphere. Crystallization is performed by a post-sputtering heat treatment.

Abstract: A Ti—O—N film is formed on an SiO2 substrate by sputtering. For example, TiO2 is used as a target and nitrogen gas is introduced into the atmosphere. Crystallization is carried out by a post-sputtering heat treatment. Then a charge separation material such as Pt is supported on the Ti—O—N film. With the fabricated TiO2 crystals, the Ti—O—N film containing nitrogen exhibits a good catalytic reaction by using visible light as acting light. Since the charge separation material captures electrons or positive holes, recombination of electrons and positive holes is effectively prevented, and consequently more efficient photocatalytic reaction is performed. It is preferable to form a photocatalyst material film (Ti—Cr—O—N film) by sputtering the SiO2 substrate by use of TiO2 and Cr as the target in a nitrogen atmosphere. Crystallization is performed by a post-sputtering heat treatment.