Abstract: A gas sensor has a sensor element, a main metal fitting and a buffer fitting made of metal materials. The sensor element has a solid electrolyte body of a cylindrical shape, an outer electrode formed on at least an outer peripheral surface of the solid electrolyte body and a front end side surface of the projecting part, and a porous ceramic layer formed on the front end side surface of the projecting part. The main metal fitting has an insert hole through which the sensor element is inserted and a stair-shaped part projects inwardly from an inner peripheral surface of the insert hole toward a radial direction of the main metal fitting. The buffer fitting is arranged between the porous ceramic layer and the stair-shaped part, and the metal materials which form the buffer fitting have a depassivation pH value of less than 1.0.

Abstract: A gas sensor has a sensor element, a main metal fitting and a buffer fitting made of metal materials. The sensor element has a solid electrolyte body of a cylindrical shape, an outer electrode formed on at least an outer peripheral surface of the solid electrolyte body and a front end side surface of the projecting part, and a porous ceramic layer formed on the front end side surface of the projecting part. The main metal fitting has an insert hole through which the sensor element is inserted and a stair-shaped part projects inwardly from an inner peripheral surface of the insert hole toward a radial direction of the main metal fitting. The buffer fitting is arranged between the porous ceramic layer and the stair-shaped part, and the metal materials which form the buffer fitting have a depassivation pH value of less than 1.0.

Abstract: The present invention provides an electron emitting device that includes a cathode, and a gate onto which electrons field-emitted from the cathode are irradiated. The gate includes at least a layer containing molybdenum and oxygen provided at a portion onto which the electrons field-emitted from the cathode are irradiated. The layer has peaks in a range of 397 eV through 401 eV, a range of 414 eV through 418 eV, a range of 534 eV through 538 eV, and a range of 540 eV through 547 eV, respectively, in a spectrum measured by electron energy loss spectroscopy using a transmission electron microscope.

Abstract: An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229±0.5 eV and a sub peak having a peak top in the range of 228.1±0.3 eV.

Abstract: There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.

Abstract: An electron-emitting device of the present invention has an electron-emitting film, and the electron-emitting film is composed of a first layer made of a first material, and a plurality of particles made of a second material whose electric resistivity is lower than that of the first material and provided into the first layer. The first material contains oxygen and nitrogen. A method for manufacturing the electron-emitting device according to the present invention has a step of forming the electron-emitting film, and the electron-emitting film forming step includes a step of forming the plurality of particles made of a second material whose electric resistivity is lower than that of a first material into the first layer made of the first material containing oxygen and nitrogen.

Abstract: A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.

Abstract: An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.

Abstract: An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229±0.5 eV and a sub peak having a peak top in the range of 228.1±0.3 eV.

Abstract: There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.

Abstract: There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.

Abstract: An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.

Abstract: There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.

Abstract: The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.

Abstract: An electron-emitting device according to the present invention is an electron-emitting device having a cathode electrode, an insulating film provided on the cathode electrode, and a dipole layer provided on the insulating film, wherein the dipole layer is formed by terminating the insulating film with an NH group. An electron source according to the present invention has a plurality of the electron-emitting devices. An image display apparatus according to the present invention has the electron source and a light emitting member that emits light by irradiation with electrons.

Abstract: A method for manufacturing an electron-emitting device according to the present invention includes a step of preparing a carbon layer containing conductive metallic particles, a step of oxidizing a portion the conductive metallic particles, and a step of forming a dipole layer on a surface of the carbon layer. An electron-emitting device according to the present invention is manufactured by the manufacturing method for the electron-emitting device. An electron source according to the present invention includes a plurality of the electron-emitting devices. An image display apparatus according to the present invention includes the electron source and a image forming member which forms an image by an electron emitted from the electron source.

Abstract: An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.

Abstract: A manufacturing method of an electron-emitting device according to a present invention including the steps of: preparing a substrate having a carbon film, and a terminating a surface of the carbon film with hydrogen by irradiating a light or particle beam locally to a part of the carbon film in an atmosphere including hydrocarbon or hydrogen or in an atmosphere including both hydrocarbon and hydrogen.

Abstract: A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.

Abstract: An electron-emitting device according to the present invention is characterized by that a gate electrode is located above a cathode electrode; a insulating member is located between the gate electrode and the cathode electrode; and the gate electrode and the insulating member are provided with openings, respectively, the openings being communicated with each other, wherein the insulating member is formed by layering three or more insulating layers including a first insulating layer, which is brought in contact with the gate electrode and has an opening, of which size is approximately the same as the size of the opening of the gate electrode; and a second insulating layer, which is located nearer to the side of the cathode electrode than the first insulating layer and has a larger opening than the opening of the gate electrode.