Patents by Inventor Ryoji Fujiwara

Ryoji Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200200701
    Abstract: A gas sensor has a sensor element, a main metal fitting and a buffer fitting made of metal materials. The sensor element has a solid electrolyte body of a cylindrical shape, an outer electrode formed on at least an outer peripheral surface of the solid electrolyte body and a front end side surface of the projecting part, and a porous ceramic layer formed on the front end side surface of the projecting part. The main metal fitting has an insert hole through which the sensor element is inserted and a stair-shaped part projects inwardly from an inner peripheral surface of the insert hole toward a radial direction of the main metal fitting. The buffer fitting is arranged between the porous ceramic layer and the stair-shaped part, and the metal materials which form the buffer fitting have a depassivation pH value of less than 1.0.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 25, 2020
    Inventors: Ryoji FUJIWARA, Shusaku KATO
  • Publication number: 20120091881
    Abstract: The present invention provides an electron emitting device that includes a cathode, and a gate onto which electrons field-emitted from the cathode are irradiated. The gate includes at least a layer containing molybdenum and oxygen provided at a portion onto which the electrons field-emitted from the cathode are irradiated. The layer has peaks in a range of 397 eV through 401 eV, a range of 414 eV through 418 eV, a range of 534 eV through 538 eV, and a range of 540 eV through 547 eV, respectively, in a spectrum measured by electron energy loss spectroscopy using a transmission electron microscope.
    Type: Application
    Filed: October 3, 2011
    Publication date: April 19, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Eiji Ozaki, Taiko Motoi, Ryoji Fujiwara, Akiko Kitao
  • Patent number: 8134288
    Abstract: An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229±0.5 eV and a sub peak having a peak top in the range of 228.1±0.3 eV.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: March 13, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Taiko Motoi, Eiji Ozaki, Ryoji Fujiwara, Akiko Kitao
  • Patent number: 8125470
    Abstract: There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: February 28, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazushi Nomura, Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Shunsuke Murakami
  • Patent number: 8080932
    Abstract: An electron-emitting device of the present invention has an electron-emitting film, and the electron-emitting film is composed of a first layer made of a first material, and a plurality of particles made of a second material whose electric resistivity is lower than that of the first material and provided into the first layer. The first material contains oxygen and nitrogen. A method for manufacturing the electron-emitting device according to the present invention has a step of forming the electron-emitting film, and the electron-emitting film forming step includes a step of forming the plurality of particles made of a second material whose electric resistivity is lower than that of a first material into the first layer made of the first material containing oxygen and nitrogen.
    Type: Grant
    Filed: May 2, 2008
    Date of Patent: December 20, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shunsuke Murakami, Ryoji Fujiwara, Noriaki Oguri, Yasushi Shimizu
  • Patent number: 8075360
    Abstract: A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.
    Type: Grant
    Filed: October 17, 2008
    Date of Patent: December 13, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yoji Teramoto, Ryoji Fujiwara, Michiyo Nishimura, Kazushi Nomura, Shunsuke Murakami
  • Patent number: 7994701
    Abstract: An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.
    Type: Grant
    Filed: December 4, 2008
    Date of Patent: August 9, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yoji Teramoto, Ryoji Fujiwara, Michiyo Nishimura, Kazushi Nomura, Shunsuke Murakami
  • Publication number: 20110148281
    Abstract: An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229±0.5 eV and a sub peak having a peak top in the range of 228.1±0.3 eV.
    Type: Application
    Filed: December 16, 2010
    Publication date: June 23, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Taiko Motoi, Eiji Ozaki, Ryoji Fujiwara, Akiko Kitao
  • Patent number: 7811625
    Abstract: There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.
    Type: Grant
    Filed: November 9, 2007
    Date of Patent: October 12, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takeshi Ichikawa, Ryoji Fujiwara, Daisuke Sasaguri
  • Patent number: 7733006
    Abstract: There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.
    Type: Grant
    Filed: June 13, 2003
    Date of Patent: June 8, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takeshi Ichikawa, Ryoji Fujiwara, Daisuke Sasaguri
  • Patent number: 7682213
    Abstract: An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
    Type: Grant
    Filed: July 18, 2007
    Date of Patent: March 23, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryoji Fujiwara, Yoji Teramoto
  • Publication number: 20090322712
    Abstract: There is provided an electron source including: an insulating substrate; a first wiring that is arranged on the insulating substrate; a second wiring that is arranged on the insulating substrate and intersects with the first wiring; and an electron-emitting device having a cathode electrode provided with an electron-emitting member and a gate electrode arranged above the cathode electrode, which is arranged on the insulating substrate and is separated from an intersecting portion of the first wiring with the second wiring; wherein the first wiring is arranged on the second wiring via an insulating layer; the gate electrode is provided with a plurality of slit-like openings that is arranged in substantially parallel at intervals; and the opening is arranged so that an extended line in a longitudinal direction thereof intersects with the first wiring.
    Type: Application
    Filed: February 29, 2008
    Publication date: December 31, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazushi Nomura, Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Shunsuke Murakami
  • Patent number: 7583016
    Abstract: The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: September 1, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventors: Michiyo Nishimura, Yoji Teramoto, Ryoji Fujiwara
  • Publication number: 20090153013
    Abstract: A method for manufacturing an electron-emitting device according to the present invention includes a step of preparing a carbon layer containing conductive metallic particles, a step of oxidizing a portion the conductive metallic particles, and a step of forming a dipole layer on a surface of the carbon layer. An electron-emitting device according to the present invention is manufactured by the manufacturing method for the electron-emitting device. An electron source according to the present invention includes a plurality of the electron-emitting devices. An image display apparatus according to the present invention includes the electron source and a image forming member which forms an image by an electron emitted from the electron source.
    Type: Application
    Filed: December 9, 2008
    Publication date: June 18, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Michiyo Nishimura, Ryoji Fujiwara, Yoji Teramoto, Kazushi Nomura, Shunsuke Murakami
  • Publication number: 20090153014
    Abstract: An electron-emitting device according to the present invention is an electron-emitting device having a cathode electrode, an insulating film provided on the cathode electrode, and a dipole layer provided on the insulating film, wherein the dipole layer is formed by terminating the insulating film with an NH group. An electron source according to the present invention has a plurality of the electron-emitting devices. An image display apparatus according to the present invention has the electron source and a light emitting member that emits light by irradiation with electrons.
    Type: Application
    Filed: December 9, 2008
    Publication date: June 18, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazushi Nomura, Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Shunsuke Murakami
  • Publication number: 20090140627
    Abstract: An electron-emitting device according to this invention has a cathode electrode, a first electrode, a second electrode, an insulating layer, a gate electrode, and an electron-emitting member. The gate electrode, the insulating layer, and the first electrode respectively have an opening communicating with each other. The electron-emitting member is provided on the cathode electrode, and at least a portion of the electron-emitting member is exposed in the opening. The second electrode is provided in the opening of the first electrode and electrically connected to the cathode electrode.
    Type: Application
    Filed: December 4, 2008
    Publication date: June 4, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yoji Teramoto, Ryoji Fujiwara, Michiyo Nishimura, Kazushi Nomura, Shunsuke Murakami
  • Publication number: 20090117811
    Abstract: A manufacturing method of an electron-emitting device according to a present invention including the steps of: preparing a substrate having a carbon film, and a terminating a surface of the carbon film with hydrogen by irradiating a light or particle beam locally to a part of the carbon film in an atmosphere including hydrocarbon or hydrogen or in an atmosphere including both hydrocarbon and hydrogen.
    Type: Application
    Filed: October 31, 2008
    Publication date: May 7, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Kazushi Nomura, Shunsuke Murakami
  • Publication number: 20090111350
    Abstract: A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.
    Type: Application
    Filed: October 17, 2008
    Publication date: April 30, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yoji Teramoto, Ryoji Fujiwara, Michiyo Nishimura, Kazushi Nomura, Shunsuke Murakami
  • Publication number: 20090108727
    Abstract: An electron-emitting device according to the present invention is characterized by that a gate electrode is located above a cathode electrode; a insulating member is located between the gate electrode and the cathode electrode; and the gate electrode and the insulating member are provided with openings, respectively, the openings being communicated with each other, wherein the insulating member is formed by layering three or more insulating layers including a first insulating layer, which is brought in contact with the gate electrode and has an opening, of which size is approximately the same as the size of the opening of the gate electrode; and a second insulating layer, which is located nearer to the side of the cathode electrode than the first insulating layer and has a larger opening than the opening of the gate electrode.
    Type: Application
    Filed: October 21, 2008
    Publication date: April 30, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazushi Nomura, Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Shunsuke Murakami
  • Publication number: 20090026914
    Abstract: To provide an electron-emitting device having an electron-emitting film containing a metal and a carbon, wherein a density of the electron-emitting film other than the metal is determined to be not less than 1.2 g/cm3 and not more than 1.8 g/cm3, and a hydrogen content in the electron-emitting film is determined to be not less than 15 atm % and not more than 40 atm % with respect to the all atoms composing the electron-emitting film. Further, a concentration of the metal in the range of a depth from a surface of this electron-emitting film up to 10 nm is determined to be not less than 0.1 atm % and not more than 40 atm % with respect to number of carbon atoms contained in the electron-emitting film.
    Type: Application
    Filed: July 16, 2008
    Publication date: January 29, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazushi Nomura, Ryoji Fujiwara, Michiyo Nishimura, Yoji Teramoto, Shunsuke Murakami