Patents by Inventor Ryoji Hamasaki
Ryoji Hamasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230282491Abstract: Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV. The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.Type: ApplicationFiled: February 24, 2023Publication date: September 7, 2023Inventors: Naoyuki KOFUJI, Masahito MORI, Toshiaki NISHIDA, Ryoji HAMASAKI
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Publication number: 20180047595Abstract: Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV. The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.Type: ApplicationFiled: April 27, 2016Publication date: February 15, 2018Inventors: Naoyuki KOFUJI, Masahito MORI, Toshiaki NISHIDA, Ryoji HAMASAKI
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Publication number: 20100140224Abstract: A plasma processing apparatus and method which includes a vacuum processing chamber, a plasma generating unit, a process gas supply unit, a specimen table, and a vacuum pumping unit. The specimen table includes an electrostatic arrangement for holding a specimen on a holding surface of the specimen table, a specimen table cover made of an insulator arranged around the specimen table, and first and second heat transfer gas supply units. The first heat transfer gas supply unit has a main path for supplying a heat transfer gas to the specimen holding surface, and the second heat transfer gas supply unit has a branch path branched from the main path of the first heat transfer gas supply unit for directly supplying a part of the heat transfer gas to a gap between an outer portion of the specimen holding surface and the specimen table cover for cooling the specimen table cover.Type: ApplicationFiled: February 22, 2010Publication date: June 10, 2010Inventors: Saburo Kanai, Kazue Takahashi, Kouichi Okamura, Ryoji Hamasaki, Satoshi Ito
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Publication number: 20090289035Abstract: A plasma processing apparatus and method which includes a vacuum processing chamber, a plasma generating unit, a process gas supply unit, a specimen table, and a vacuum pumping unit. The specimen table includes an electrostatic arrangement for holding a specimen on a holding surface of the specimen table by electrostatic force, a specimen table cover arranged around the specimen table, and first and second heat transfer gas supply units. The first heat transfer gas supply unit has a main path for supplying a heat transfer gas to the specimen holding surface for cooling the specimen, and the second heat transfer gas supply unit has a branch path branched from the main path of the first heat transfer gas supply unit for supplying a part of the heat transfer gas to a gap between an outer portion of the specimen holding surface and the specimen table cover.Type: ApplicationFiled: August 3, 2009Publication date: November 26, 2009Inventors: Saburo Kanai, Kazue Takahashi, Kouichi Okamura, Ryoji Hamasaki, Satoshi Ito
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Patent number: 7565879Abstract: A plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable, arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature monitoring unit monitors temperature of the inner cylinder, and a controller controls temperature of the outer cylinder. A desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder, and the controller controls the temperature of the outer cylinder in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.Type: GrantFiled: September 30, 2004Date of Patent: July 28, 2009Assignee: Hitachi, LtdInventors: Saburo Kanai, Kazue Takahashi, Kouichi Okamura, Ryoji Hamasaki, Satoshi Ito
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Publication number: 20080112780Abstract: The invention provides a vacuum processing apparatus comprising: a plurality of vacuum vessels, each having a processing chamber capable of processing a subject substrate sample placed therein under reduced pressure; a cassette stage for mounting a cassette capable of containing a plurality of the samples; at least one transfer apparatus for transferring the sample from the cassette to the processing chamber in one of the vacuum vessels along a predetermined path and returning the sample processed in the processing chamber to the cassette; and an aligner placed on the path between the cassette stage and the plurality of vacuum vessels for aligning the sample to a predetermined position. The aligner aligns the sample to different positions depending on processings applied to the sample.Type: ApplicationFiled: March 7, 2007Publication date: May 15, 2008Inventors: KATSUJI MATANO, Ryoji Hamasaki, Masamichi Sakaguchi
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Patent number: 7208422Abstract: A plasma processing method utilizing a plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature of the inner cylinder is monitored, and a desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder. A temperature of the outer cylinder is controlled in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.Type: GrantFiled: September 30, 2004Date of Patent: April 24, 2007Assignee: Hitachi, Ltd.Inventors: Saburo Kanai, Kazue Takahashi, Kouichi Okamura, Ryoji Hamasaki, Satoshi Ito
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Publication number: 20060249254Abstract: A plasma processing apparatus and method which includes a vacuum processing chamber, a plasma generating unit, a process gas supply unit, a specimen table, and a vacuum pumping unit. The specimen table includes an electrostatic arrangement for holding a specimen on a holding surface of the specimen table by electrostatic force, a specimen table cover arranged around the specimen table, and first and second heat transfer gas supply units. The first heat transfer gas supply unit has a main path for supplying a heat transfer gas to the specimen holding surface for cooling the specimen, and the second heat transfer gas supply unit has a branch path branched from the main path of the first heat transfer gas supply unit for supplying a part of the heat transfer gas to a gap between an outer portion of the specimen holding surface and the specimen table cover.Type: ApplicationFiled: July 3, 2006Publication date: November 9, 2006Inventors: Saburo Kanai, Kazue Takahashi, Kouichi Okamura, Ryoji Hamasaki, Satoshi Ito
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Publication number: 20050064717Abstract: A plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable, arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature monitoring unit monitors temperature of the inner cylinder, and a controller controls temperature of the outer cylinder. A desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder, and the controller controls the temperature of the outer cylinder in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.Type: ApplicationFiled: September 30, 2004Publication date: March 24, 2005Inventors: Saburo Kanai, Kazue Takahashi, Kouichi Okamura, Ryoji Hamasaki, Satoshi Ito
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Publication number: 20050039683Abstract: A plasma processing method utilizing a plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature of the inner cylinder is monitored, and a desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder. A temperature of the outer cylinder is controlled in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.Type: ApplicationFiled: September 30, 2004Publication date: February 24, 2005Inventors: Saburo Kanai, Kazue Takahashi, Kouichi Okamura, Ryoji Hamasaki, Satoshi Ito
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Patent number: 6156663Abstract: Provided is a method of processing a sample by generating plasma by an electromagnetic wave, wherein a material containing carbon, such as silicon carbide (Sic), is disposed in a vacuum container serving as a discharge region. The inside of an etching chamber is cleaned by O.sub.2 cleaning treatment by using a sheet type dry etching apparatus, and after an inner wall temperature of the etching chamber is set and controlled, a sample is conveyed into the etching chamber, and a TiN cap layer, an Al--Cu alloy layer and a TiN barrier layer are plasma-etched in order by using BCl.sub.3 /Cl.sub.2 /CH.sub.4 /Ar gases with the pattern of a resist film as a mask.Type: GrantFiled: September 27, 1996Date of Patent: December 5, 2000Assignee: Hitachi, Ltd.Inventors: Katsuya Watanabe, Saburo Kanai, Ryoji Hamasaki, Tsuyoshi Yoshida, Yutaka Omoto, Masayuki Kojima, Syunji Sasabe, Tadamitsu Kanekiyo, Takazumi Ishizu
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Patent number: 5895586Abstract: There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms.Structural materials used for a high vacuum processing chamber of a plasma processing apparatus are aluminum, aluminum having an anodic oxide coating processed surface and a material having a film of aluminum oxide or a film having aluminum oxide as a main component. A part or the whole of the inner surfaces of the processing chamber is constructed with a pre-fluorinated material.When plasma processing of a processed substance is performed using a gas plasma containing fluorine atoms in the processing chamber having the pre-fluorinated inner surfaces, time-varying processing characteristic can be suppressed.Type: GrantFiled: November 12, 1996Date of Patent: April 20, 1999Assignee: Hitachi, Ltd.Inventors: Tetsunori Kaji, Saburo Kanai, Satoshi Ito, Ryoji Hamasaki, Tetsuo Ono, Tatehito Usui, Kazue Takahashi, Kazutami Tago
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Patent number: 5874012Abstract: A plasma processing apparatus is provided. In the apparatus, an inside surface of a process chamber is prevented from having its quality varied or becoming a heavy metal contamination source by plasma in the chamber, and at the same time the plasma characteristic is stabilized over time. In a plasma processing apparatus including a plasma generating unit, a process chamber capable of having its inside pressure reduced, a gas supply system for supplying a gas to the process chamber, a sample table for holding a sample and a vacuum pumping system, the process chamber has an outer cylinder capable of withstanding depressurization and an inner cylinder arranged inside the outer cylinder and being spaced therefrom through a gap, and a heater and a temperature control are provided in the outer cylinder. A non-magnetic metallic material not containing heavy metals, or ceramic, carbon, silicon or quartz is used for the inner cylinder.Type: GrantFiled: March 8, 1996Date of Patent: February 23, 1999Assignee: Hitachi, Ltd.Inventors: Saburo Kanai, Kazue Takahashi, Kouichi Okamura, Ryoji Hamasaki, Satoshi Ito