Abstract: This blade repair method has: a first welding step in which overlay welding in which a first welding material is used is performed to form a notched part and a bury a first region positioned on a blade-body side with a first welding material; and a second welding step in which, after the first welding step, overlay welding in which a second welding material is used is performed to form a notched part and bury a second region positioned on a front-surface side of a platform with the second welding material. The high-temperature strength of the second welding material is higher than the high-temperature strength of the first welding material, the weldability of the first welding material is higher than the weldability of the second welding material, and the second region is located in a range from 1.0 mm to 3.0 mm (inclusive) from the front surface of the platform toward the blade body.

Abstract: Heat from a semiconductor device is effectively dissipated while the height of the semiconductor device is kept low. A semiconductor device includes a cooler configured to cool a semiconductor module. The semiconductor module includes: a metal block, a semiconductor element, a terminal connected to the semiconductor element, and a resin covering a part of the terminal, the metal block, and the semiconductor element. The cooler includes: a metal base including the semiconductor module in a plan view while being in contact with a lower surface of the semiconductor module, and a cooling pipe disposed on an upper surface of the metal base and configured to cool the semiconductor module. The cooling pipe at least partially surrounds the semiconductor module in a plan view.

Abstract: Provided is a cooler that is less likely to cause an uneven degree of cooling during cooling of multiple cooling targets. The cooler is thus provided inside with a flow path of a refrigerant, the flow path including: an outer-peripheral-side header region that is provided on an outer peripheral side of an annular shape and extends in a circumferential direction of the annular shape; an inner-peripheral-side header region that is provided on an inner peripheral side of the annular shape across a separation region from the outer-peripheral-side header region and extends in the circumferential direction; and a fin region serving as the separation region in which a fin is disposed.

Abstract: A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.

Abstract: A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.

Abstract: An object of the present invention is to provide a semiconductor device capable of reducing external stress transmitted to a semiconductor chip through a lead frame. A semiconductor device includes a base plate, a semiconductor element held on the base plate, a housing disposed on the base plate and having a frame shape enclosing the semiconductor element, a terminal section provided in an outer surface of the housing and connectable to an external device, a lead frame that is long and has one end disposed so as to be connectable to the terminal section provided in the housing and another end connected onto the semiconductor element via a bonding material, a sealing material disposed in the housing to seal the lead frame and the semiconductor element, and a fixing section that fixes, in the housing, part of the lead frame to the base plate or the housing.

Abstract: A cooler (1) has a cooling plate (1a), a cooling fin (1b) provided on a center portion of a lower surface of the cooling plate (1a), and a lower projection (1c) provided on a peripheral portion of the lower surface of the cooling plate (1a). A semiconductor device (3) is provided on an upper surface of the cooling plate (1a). A bus bar (5) is connected to the semiconductor device (3). A cooling mechanism (8) encloses a lower surface and a lateral surface of the cooler (1). An O-ring (9) is provided between a lower surface of the lower projection (1c) and a bottom surface of the cooling mechanism (8). A bolt (10) penetrates a sidewall of the cooling mechanism (8) and screws the cooler (1) to the cooling mechanism (8).

Abstract: A technique disclosed in the Description relates to a technique for improving the heat dissipation capability of a semiconductor element and the heat dissipation capability of a lead electrode without increasing the size of a product. A semiconductor device of the technique includes the following: a semiconductor element; a lead electrode having a lower surface connected to an upper surface of the semiconductor element at one end of the lead electrode, the lead electrode being an external terminal; a cooling mechanism disposed on a lower surface side of the semiconductor element; and a heat dissipation mechanism provided to be thermally joined between the lower surface of the lead electrode and the cooling mechanism, the lower surface being more adjacent to an other-end side of the lead electrode than the one end, the heat dissipation mechanism including at least one insulating layer.

Abstract: The mold device according to the present invention is a mold device to resin-seal the semiconductor device including an insert electrode, and in the semiconductor device, the insert electrode is provided with an insert hole, a nut having a screw hole is disposed in the insert electrode so that the insert hole and the screw hole communicate with each other, the mold device includes a mold body into which resin is injected to resin-seal the semiconductor device, including a side of the insert electrode where the nut is disposed, and a rod-like member that is inserted into the insert hole, and the rod-like member is inserted into the screw hole of the nut through the insert hole of the insert electrode to draw the nut to the side of the insert electrode.

Abstract: A cooler (1) has a cooling plate (1a), a cooling fin (1b) provided on a center portion of a lower surface of the cooling plate (1a), and a lower projection (1c) provided on a peripheral portion of the lower surface of the cooling plate (1a). A semiconductor device (3) is provided on an upper surface of the cooling plate (1a). A bus bar (5) is connected to the semiconductor device (3). A cooling mechanism (8) encloses a lower surface and a lateral surface of the cooler (1). An O-ring (9) is provided between a lower surface of the lower projection (1c) and a bottom surface of the cooling mechanism (8). A bolt (10) penetrates a sidewall of the cooling mechanism (8) and screws the cooler (1) to the cooling mechanism (8).

Abstract: An object of the present invention is to provide a semiconductor device capable of reducing external stress transmitted to a semiconductor chip through a lead frame. A semiconductor device includes a base plate, a semiconductor element held on the base plate, a housing disposed on the base plate and having a frame shape enclosing the semiconductor element, a terminal section provided in an outer surface of the housing and connectable to an external device, a lead frame that is long and has one end disposed so as to be connectable to the terminal section provided in the housing and another end connected onto the semiconductor element via a bonding material, a sealing material disposed in the housing to seal the lead frame and the semiconductor element, and a fixing section that fixes, in the housing, part of the lead frame to the base plate or the housing.

Abstract: A technique disclosed in the Description relates to a technique for improving the heat dissipation capability of a semiconductor element and the heat dissipation capability of a lead electrode without increasing the size of a product. A semiconductor device of the technique includes the following: a semiconductor element; a lead electrode having a lower surface connected to an upper surface of the semiconductor element at one end of the lead electrode, the lead electrode being an external terminal; a cooling mechanism disposed on a lower surface side of the semiconductor element; and a heat dissipation mechanism provided to be thermally joined between the lower surface of the lead electrode and the cooling mechanism, the lower surface being more adjacent to an other-end side of the lead electrode than the one end, the heat dissipation mechanism including at least one insulating layer.

Abstract: According to the present invention, a grease layer having a grease as a constituent material is provided in a filling region lying between a heat dissipation surface that is a bottom surface of a heat dissipation material of a semiconductor module and a surface of a cooler. Further, a seal material is formed on the surface of the cooler and covers the entire side surface region of the grease layer without any gap. The seal material has a liquid curable sealing agent as a constituent material.

Abstract: According to the present invention, a grease layer having a grease as a constituent material is provided in a filling region lying between a heat dissipation surface that is a bottom surface of a heat dissipation material of a semiconductor module and a surface of a cooler. Further, a seal material is formed on the surface of the cooler and covers the entire side surface region of the grease layer without any gap. The seal material has a liquid curable sealing agent as a constituent material.