Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

Abstract: A plasma processing equipment includes a vacuum processing chamber, an insulating material, a gas inlet, a high frequency induction antenna provided at an upper outside of the vacuum processing chamber, a magnetic field coil, a yoke for controlling distribution of a magnetic field in the vacuum processing chamber, a high frequency power supply for generating plasma and supplying a high frequency current to the antenna, and a power supply for supplying power to the magnetic field coil. The antenna is divided into n high frequency induction antenna elements are arranged in tandem on one circle so that a high frequency current delayed sequentially by ? (wavelength of high frequency power supply)/n flows clockwise through the antenna elements arranged in tandem via a delay unit, and a magnetic field is applied from the magnetic field coil to generate electron cyclotron resonance (ECR) phenomenon.

Abstract: In a plasma processing apparatus including a processing chamber, a dielectric window for hermetically sealing the upper portion of the processing chamber, an induction antenna deployed above the dielectric window, a Faraday shield unit, and a control apparatus for controlling a first radio-frequency power source for supplying a radio-frequency power to the induction antenna, and a second radio-frequency power source for supplying a radio-frequency power to the Faraday shield unit, the Faraday shield unit includes a first Faraday shield having a first element, and a second Faraday shield having a second element deployed at a position adjacent to the first element, the control apparatus applying a time modulation to the radio-frequency powers that are respectively supplied to the first element and the second element, the phase of the first-element-supplied and time-modulated radio-frequency power being different from the phase of the second-element-supplied and time-modulated radio-frequency power.

Abstract: In the present invention, there is provided a plasma processing apparatus including a vacuum processing chamber for applying a plasma processing to a sample, a sample stage deployed inside the vacuum processing chamber for mounting the sample thereon, induction antennas provided outside the vacuum processing chamber, a radio-frequency power supply for supplying a radio-frequency power to the induction antennas, and a Faraday shield which is capacitively coupled with the plasma, a radio-frequency voltage being applied to the Faraday shield from the radio-frequency power supply via a matching box, wherein the matching box includes a series LC circuit including a variable capacitor and an inductor, a motor control unit for controlling a motor for the variable capacitor, and a radio-frequency voltage detection unit for detecting the radio-frequency voltage applied to the Faraday shield, the matching box executing a feedback control over the radio-frequency voltage applied to the Faraday shield.

Abstract: A plasma processing equipment includes a vacuum processing chamber, an insulating material, a gas inlet, a high frequency induction antenna provided at an upper outside of the vacuum processing chamber, a magnetic field coil, a yoke for controlling distribution of a magnetic field in the vacuum processing chamber, a high frequency power supply for generating plasma and supplying a high frequency current to the antenna, and a power supply for supplying power to the magnetic field coil. The antenna is divided into n high frequency induction antenna elements are arranged in tandem on one circle so that a high frequency current delayed sequentially by ? (wavelength of high frequency power supply)/n flows clockwise through the antenna elements arranged in tandem via a delay unit, and a magnetic field is applied from the magnetic field coil to generate electron cyclotron resonance (ECR) phenomenon.

Abstract: A plasma processing apparatus includes a plasma-generation high-frequency power supply which generates plasma in a processing chamber, a biasing high-frequency power supply which applies high-frequency bias electric power to an electrode on which a sample is placed, a monitor which monitors a peak-to-peak value of the high-frequency bias electric power applied to the electrode, an electrostatic chuck power supply which makes the electrode electrostatically attract the sample, a self-bias voltage calculating unit which calculates self-bias voltage of the sample by monitoring the peak-to-peak value of the high-frequency bias electric power applied to the electrode, and an output voltage control unit which controls output voltage of the electrostatic chuck power supply based on the calculated self-bias voltage.

Abstract: In a plasma processing apparatus including a processing chamber, a dielectric window for hermetically sealing the upper portion of the processing chamber, an induction antenna deployed above the dielectric window, a Faraday shield unit, and a control apparatus for controlling a first radio-frequency power source for supplying a radio-frequency power to the induction antenna, and a second radio-frequency power source for supplying a radio-frequency power to the Faraday shield unit, the Faraday shield unit includes a first Faraday shield having a first element, and a second Faraday shield having a second element deployed at a position adjacent to the first element, the control apparatus applying a time modulation to the radio-frequency powers that are respectively supplied to the first element and the second element, the phase of the first-element-supplied and time-modulated radio-frequency power being different from the phase of the second-element-supplied and time-modulated radio-frequency power.

Abstract: The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.

Abstract: The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

Abstract: A plasma processing apparatus includes a vacuum vessel, first, second and third power supplies which supply first, second and third RF voltages, a first electrode disposed within the vacuum vessel, a second electrode disposed inside or outside the vacuum vessel, a phase control unit for controlling the phase difference of the second and third RF voltages, wherein the second and third RF voltages are of the same frequency, and a RF radiation unit which is supplied with the third RF voltage. The apparatus further comprises a voltage detector, and the phase control unit computes a phase difference between the second and third RF voltages based upon an output of the voltage detector.

Abstract: A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.

Abstract: Plasma processing focus ring design arrangements, including: acquiring a surface voltage and a sheath thickness above a surface of the object to be processed, and a surface voltage and a sheath thickness above a surface of the focus ring, by an equivalent circuit analysis; performing 2D plasma and 2D electric field analysis, based on the equivalent circuit analysis; and designing configuration of the focus ring and the processing stage, to achieve a plasma-sheath interface flattening condition by making a sum of a height from a height reference point to a surface of the object and a sheath thickness from the surface of the object to a plasma-sheath interface above the object, equal to a sum of a height from the height reference point to a surface of the focus ring and a sheath thickness from the surface of the focus ring to a plasma-sheath interface above the focus ring.

Abstract: A plasma processing apparatus is disclosed for minimizing the non-uniformity of potential distribution around wafer circumference. The apparatus includes a focus ring formed of a dielectric, and a conductor or a semiconductor having RF applied thereto. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material, and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface.

Abstract: A plasma processing apparatus includes a processing chamber, a flat-plate-like dielectric window, an induction coil, a flat electrode, a RF power source, a gas supply unit, and a sample stage on which a sample is mounted. A process gas supply plate is provided opposite the dielectric window on an inner side of the processing chamber, and a recess portion is formed in the flat electrode on a side opposite the induction coil corresponding to a gas supply position of the process gas supply plate.

Abstract: In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

Abstract: A plasma processing apparatus which includes a plasma processing chamber for plasma-processing a sample, an induction antenna disposed outside the plasma processing chamber, a radio-frequency power supply for supplying radio-frequency power to the induction antenna, and a unit for controlling electrostatic capacity including a Faraday shield capacitively coupled with plasma and a dielectric window allowing an induction magnetic field to transmit into the plasma processing chamber is provided; electrostatic capacity between the Faraday shield and the dielectric window at a center portion and electrostatic capacity between the Faraday shield and the dielectric window at an edge portion are controlled.

Abstract: In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.