Patents by Inventor Ryoji Nomura

Ryoji Nomura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110014728
    Abstract: An object of the invention is to provide an electronic device which can be easily manufactured using a wet method. One of electronic devices according to the invention has a first layer and a second layer. The first layer contains a first compound including a conjugated double bond. Here, the first compound preferably has a molecular weight of 100 to 1000. The second layer contains a second compound having a cyclic structure which is formed by an addition reaction between two molecules of the first compound. Here, a light emitting element or an element such as a transistor can be given as the electronic device.
    Type: Application
    Filed: August 11, 2010
    Publication date: January 20, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Ryoji NOMURA, Tsunenori SUZUKI
  • Patent number: 7871714
    Abstract: A novel electroluminescent polymer is represented by the following formula. A film of the polymer represented by the following formula can be formed by electrolytic polymerization, and farther emits light in a different color by an electric field when a substituent thereof is changed. Therefore, a light-emitting device that is capable of multicolor displaying can be easily obtained.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: January 18, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takako Takasu, Satoshi Seo, Ryoji Nomura
  • Publication number: 20100301322
    Abstract: A novel stilbene derivative is provided with motivation of providing a blue emissive material showing excellent color purity. The use of the stilbene derivative of the present invention allows the fabrication of a blue-emissive light-emitting element with excellent color purity. The invention also includes an electronic device equipped with a display portion in which the stilbene derivative is employed. The stilbene derivative of the present invention is represented by formula (1), in which Ar1 and Ar2 may form a 5-membered ring by being directly bonded to each other. In formula (1), A11 represents any one of substituents represented by general formulas (1-1) to (1-3). The variables shown in formula (1) and (1-1) to (1-3) are as defined in the specification.
    Type: Application
    Filed: June 7, 2010
    Publication date: December 2, 2010
    Inventors: Masakazu Egawa, Harue Osaka, Sachiko Kawakami, Nobuharu Ohsawa, Satoshi Seo, Ryoji Nomura
  • Patent number: 7842945
    Abstract: An object is to provide a novel anthracene derivative. Another object is to provide a light-emitting element with high luminous efficiency. Yet another object is to provide a light-emitting element with a long lifetime. Still another object is to provide a light-emitting device and an electronic device having a long lifetime by using the light-emitting elements of the present invention. The anthracene derivative represented by General Formula (1) is provided. The ability of the anthracene derivative represented by General Formula (1) to exhibit high luminous efficiency allows the production of a light-emitting element with high luminous efficiency and a long lifetime.
    Type: Grant
    Filed: April 24, 2007
    Date of Patent: November 30, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masakazu Egawa, Harue Nakashima, Sachiko Kawakami, Tsunenori Suzuki, Ryoji Nomura
  • Patent number: 7838128
    Abstract: An object is to provide a carbazole derivative that is useful as a raw material in manufacturing a light emitting element material having resistance to repetition of an oxidation reaction. The carbazole derivative is represented by General Formula (1) in the following. In General Formula (1), R1 represents any one selected from an alkyl group having 1 to 4 carbon atoms such as methyl, ethyl, and tert-butyl, and an aryl group having 1 to 12 carbon atoms such as phenyl, biphenyl, and naphthyl.
    Type: Grant
    Filed: July 10, 2006
    Date of Patent: November 23, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Sachiko Kawakami, Nobuharu Ohsawa, Harue Nakashima, Kumi Kojima, Masakazu Egawa, Ryoji Nomura
  • Patent number: 7834538
    Abstract: To provide an aspect of a novel display device using a light emitting element which is composed of a cathode, an EL layer and an anode, and a manufacturing device of the display device. According to the present invention, dual-sided emission display can be performed in one sheet white color light emitting panel 1001 in which, for example, different images can be displayed on a topside screen and backside screen (full color display, monochrome display or area color display). Two polarizing plates 1002, 1003 are formed by shifting the position thereof with an angular deviation of 90 degrees each other so as to prevent outside light from passing through the pane, thereby realizing a black display when not displayed.
    Type: Grant
    Filed: December 11, 2006
    Date of Patent: November 16, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroko Abe, Masakazu Murakami, Ryoji Nomura
  • Patent number: 7816721
    Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: October 19, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroko Abe, Yukie Nemoto, Ryoji Nomura, Mikio Yukawa
  • Publication number: 20100258792
    Abstract: It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.
    Type: Application
    Filed: June 25, 2010
    Publication date: October 14, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Ryoji NOMURA
  • Patent number: 7812520
    Abstract: The conventional light-emitting element formed by an electroluminescent material has a problem due to poor color purity of light emission. Accordingly, it is an object of the present invention to provide a high luminance and high efficiency light-emitting device formed by an organic compound material. The invention provides a light-emitting device in which an organic compound layer that emits light having an emission peak with a half-band width of at most 10 nm upon applying current is interposed between a pair of electrodes is provided. The variation of emission peak intensity depending on a current density can be sorted by two linear regions with different gradients. A region of a sharp gradient is at a higher current density side compared to a region of a slow gradient. TFTs are provided to each pixel in order to perform active matrix driving.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: October 12, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Hiroko Abe, Mikio Yukawa, Shunpei Yamazaki
  • Publication number: 20100233358
    Abstract: The present invention is a fabrication method of a light-emitting device characterized by ejecting a solution containing a luminescent material toward an anode or a cathode under a reduced pressure and characterized in that in a duration before the solution is arrived at the anode or the cathode, the solvent in the solution is volatilized, the remaining part of the luminescent material is deposited on the anode or the cathode, and thereby formed a light-emitting layer. By the present invention, a baking process for thickness reduction is not required after applying the solution. Accordingly, it is possible to provide a fabrication method with high throughput although the method is low in cost and simple.
    Type: Application
    Filed: May 24, 2010
    Publication date: September 16, 2010
    Inventors: Shunpei Yamazaki, Masakazu Murakami, Ryoji Nomura, Satoshi Seo
  • Patent number: 7793848
    Abstract: It is an object of the present invention to provide a semiconductor device having a memory circuit which is nonvolatile and able to be written additionally, an antenna which can be easily manufactured, and to provide a manufacturing method thereof. In addition, it is an object of the present invention to prevent unauthorized rewriting of information of a wireless chip and forgery of a wireless chip itself and to ensure a security of a wireless chip. In view of the foregoing, the present invention provides an IC tag in which information thereof is identified by wireless communication signal and also information of a memory in an IC tag (a memory which can not be rewritten) is identified by an optical reading device. A memory in an IC tag according to the present invention has an identification surface with which information can be identified by an optical reading device.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: September 14, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Abe, Mikio Yukawa, Ryoji Nomura, Satoshi Seo, Shunpei Yamazaki
  • Patent number: 7796240
    Abstract: The present invention provides an evaluation method for evaluating whether a light-emitting element material to be evaluated is suitable for a host material or a guest material. By carrying out a first step of measuring absorption intensity of a light-emitting element material and a second step of irradiating the light-emitting element material with light for a predetermined period of time, repeatedly; thereby a change in absorption intensity with time is evaluated so that whether the light-emitting material is suitable for a host material or a guest material can be distinguished. The light emitted to the light-emitting element material preferably has a wavelength component which is absorbed by a skeleton which contributes to excitation of the light-emitting element material.
    Type: Grant
    Filed: March 3, 2009
    Date of Patent: September 14, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Satoshi Seo, Kumi Kojima, Nobuharu Ohsawa
  • Patent number: 7791067
    Abstract: An object of the invention is to provide an electronic device which can be easily manufactured using a wet method. One of electronic devices according to the invention has a first layer and a second layer. The first layer contains a first compound including a conjugated double bond. Here, the first compound preferably has a molecular weight of 100 to 1000. The second layer contains a second compound having a cyclic structure which is formed by an addition reaction between two molecules of the first compound. Here, a light emitting element or an element such as a transistor can be given as the electronic device.
    Type: Grant
    Filed: August 12, 2005
    Date of Patent: September 7, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Tsunenori Suzuki
  • Publication number: 20100213457
    Abstract: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.
    Type: Application
    Filed: May 5, 2010
    Publication date: August 26, 2010
    Inventors: Satoko Shitagaki, Satoshi Seo, Ryoji Nomura
  • Patent number: 7755278
    Abstract: A light emitting element with reduced inconvenience due to dust or the like and a manufacturing method thereof. One feature of the invention is a light emitting element having a first layer provided so as to be in contact with a first electrode, and a second layer provided so as to be in contact with the first layer, between the first electrode and a second electrode. A light emitting layer exists between the second layer and the second electrode. The first electrode, the second electrode, the first layer, the second layer, and the light emitting layer are stacked so that the first layer is formed in advance compared with the second layer. Here, the first layer is a layer containing an organic compound. Especially, an organic compound having conductivity is preferable among organic compounds. Alternatively, the second layer is a layer containing an inorganic compound. In particular, an inorganic compound having hole transport property is preferable among inorganic compounds.
    Type: Grant
    Filed: August 12, 2005
    Date of Patent: July 13, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Tsunenori Suzuki, Satoshi Seo
  • Patent number: 7750159
    Abstract: It is an object of the present invention to provide a novel material that can be used for an electron injecting material. In addition, it is an object of the present invention to provide a light-emitting element that is able to broaden choices for an electrode material. An aspect of the present invention is an electron injecting material represented by a general formula (2). In the general formula (2), R6 is selected from the group consisting of an alkyl group having 1 to 4 carbon atoms, an alkenyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 10 carbon atoms, where the alkenyl group and the aryl group may have a substituent.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: July 6, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Daisuke Kumaki
  • Publication number: 20100164376
    Abstract: A novel anthracene derivative represented by General Formula (1) is provided, which enables the production of a light-emitting element with high luminous efficiency and a long lifetime. A high-performance light-emitting device and electronic device in which the anthracene derivative is employed are also disclosed. The anthracene derivative of the present invention is represented by General Formula (1), in which the unit A represents any one of substituents represented by General Formulae (1-1) to (1-3). The variables shown in Formulae (1) and (1-1) to (1-3) are defined in the specification.
    Type: Application
    Filed: March 4, 2010
    Publication date: July 1, 2010
    Inventors: Masakazu Egawa, Sachiko Kawakami, Harue Osaka, Tsunenori Suzuki, Ryoji Nomura
  • Patent number: 7745252
    Abstract: It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.
    Type: Grant
    Filed: August 25, 2006
    Date of Patent: June 29, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tsunenori Suzuki, Ryoji Nomura, Mikio Yukawa, Nobuharu Ohsawa, Tamae Takano, Yoshinobu Asami, Takehisa Sato
  • Patent number: 7745989
    Abstract: It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.
    Type: Grant
    Filed: June 23, 2006
    Date of Patent: June 29, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Ryoji Nomura
  • Patent number: 7745019
    Abstract: A light emitting element of the present invention includes a pair of electrodes, a layer containing a composite material, and a light emitting region; wherein the layer containing a composite material contains an organic compound and an inorganic compound; the light emitting region contains a material having a high light emitting property and a material having a high carrier transporting property, and a region containing high concentration of the material having a high light emitting property and a region containing high concentration of the material having a high carrier transporting property are alternately stacked in the light emitting region.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: June 29, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Yasuyuki Arai, Kaoru Kato, Shunpei Yamazaki