Abstract: A display device that can prevent linear unevenness (uneven line) generated in one direction of a display image and can provide excellent display qualities includes a pixel including sub-pixels of n-colors (where n is an integer of 4 or more), and a signal line arranged to drive sub-pixels, the pixel and the signal line arranged to drive sub-pixels being disposed in a display region. The signal line arranged to drive sub-pixels is disposed on a display region center side of a sub-pixel positioned at least one terminal of the display region. The signal line arranged to drive sub-pixels is not disposed on a non-display region side of the sub-pixel positioned at the at least one terminal. The sub-pixel positioned at the at least one terminal has a color other than a color with the highest luminance of the n-colors.

Abstract: A display device that can prevent linear unevenness (uneven line) generated in one direction of a display image and can provide excellent display qualities includes a pixel including sub-pixels of n-colors (where n is an integer of 4 or more), and a signal line arranged to drive sub-pixels, the pixel and the signal line arranged to drive sub-pixels being disposed in a display region. The signal line arranged to drive sub-pixels is disposed on a display region center side of a sub-pixel positioned at least one terminal of the display region. The signal line arranged to drive sub-pixels is not disposed on a non-display region side of the sub-pixel positioned at the at least one terminal. The sub-pixel positioned at the at least one terminal has a color other than a color with the highest luminance of the n-colors.

Abstract: An active matrix substrate of the present invention includes a TFT and a substrate. The TFT formed on a substrate includes, when viewed in a normal direction of the substrate: a first region in which a gate electrode overlaps a source electrode via a semiconductor layer; a second region in which the gate electrode overlaps a drain electrode via the semiconductor layer; and a third region in which the semiconductor layer overlaps neither the gate electrode, source electrode, nor the drain electrode. The third region includes a portion adjoining the source electrode lying outside the first region and/or a portion adjoining the drain electrode lying outside the second region. The gate electrode includes: a main body, which includes a portion constituting the first region and the second region; and a protrusion from the main body.

Abstract: An active matrix substrate of the present invention includes a TFT and a substrate. The TFT formed on a substrate includes, when viewed in a normal direction of the substrate: a first region in which a gate electrode overlaps a source electrode via a semiconductor layer; a second region in which the gate electrode overlaps a drain electrode via the semiconductor layer; and a third region in which the semiconductor layer overlaps neither the gate electrode, source electrode, nor the drain electrode. The third region includes a portion adjoining the source electrode lying outside the first region and/or a portion adjoining the drain electrode lying outside the second region. The gate electrode includes: a main body, which includes a portion constituting the first region and the second region; and a protrusion from the main body.