Abstract: A method of manufacturing an MgB2 thin film wire having an optimum average grain size is done by providing an optimum average grain size range to increase a pinning force and improve Jc with respect to the MgB2 thin film wire. In this method, the MgB2 thin film wire is made of an aggregate of MgB2 grains having a columnar structure which alignment is controlled to be in a direction perpendicular to a surface, a ratio of MgB2 to a total volume of the thin film wire is 90% or more, an average grain size of the grains is 30 nm or more and 200 nm or less by forming the MgB2 thin film having a film thickness of 1000 nm or more and 10000 nm or less in the lateral direction, and the average grain size of the grains is 40 nm or more and 100 nm or less.

Abstract: To increase an output from a magnetoresistive element without using a special magnetic material, provided is a magnetic detection device including a magnetoresistive element including a ferromagnetic reference layer having a fixed magnetization direction, to which a spin wave induction layer is connected, so that the spin wave induction layer injects, into the ferromagnetic reference layer, electrons having spins in a specific direction by a spin electromotive force internally generated.

Abstract: To increase an output from a magnetoresistive element without using a special magnetic material, provided is a magnetic detection device including a magnetoresistive element including a ferromagnetic reference layer having a fixed magnetization direction, to which a spin wave induction layer is connected, so that the spin wave induction layer injects, into the ferromagnetic reference layer, electrons having spins in a specific direction by a spin electromotive force internally generated.

Abstract: A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair.

Abstract: A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair.

Abstract: The present invention provides drug carriers having high heating efficiency by high-frequency dielectric heating in a state of being selectively accumulated in a target site. The drug carriers each consist of a drug, magnetic fine particles, and a shell containing the drug and the magnetic fine particles. The shell has an outer diameter in a range from 10 nm to 200 nm. The magnetic fine particles having an average particle diameter of d has a standard deviation ? of particle diameter distribution satisfying 0.8d>?>0.4d. The magnetic fine particles contained in the individual drug carriers generate hysteresis heat due to high-frequency dielectric heating by irradiation of a high-frequency magnetic field.