Abstract: An electrode catalyst layer for fuel cells capable of effectively preventing reduction of cell voltage in a high current density region. The electrode catalyst layer contains a catalyst-on-support composed of a support made of a conductive inorganic oxide having a catalyst supported thereon and a hydrophilic material. The hydrophilic material is an agglomerate including hydrophilic conductive particles. The content of the hydrophilic material in the catalyst layer is 2 mass % or higher and lower than 20 mass % relative to the sum of the support and the hydrophilic material. The ratio of the particle size d1 of the hydrophilic particles to the particle size D of the catalyst-on-support is 0.5 to 3.0. The ratio of the particle size d2 of the hydrophilic material to the thickness T of the catalyst layer is 0.1 to 1.2.

Abstract: An electrode catalyst layer for fuel cells capable of effectively preventing reduction of cell voltage in a high current density region. The electrode catalyst layer contains a catalyst-on-support composed of a support made of a conductive inorganic oxide having a catalyst supported thereon and a hydrophilic material. The hydrophilic material is an agglomerate including hydrophilic conductive particles. The content of the hydrophilic material in the catalyst layer is 2 mass % or higher and lower than 20 mass % relative to the sum of the support and the hydrophilic material. The ratio of the particle size d1 of the hydrophilic particles to the particle size D of the catalyst-on-support is 0.5 to 3.0. The ratio of the particle size d2 of the hydrophilic material to the thickness T of the catalyst layer is 0.1 to 1.2.

Abstract: In this fuel cell electrode catalyst layer, a catalyst is supported on a carrier comprising inorganic oxide particles. The fuel cell electrode catalyst layer is provided with a porous structure. When a mercury penetration method is used to measure the pore size distribution of the porous structure, a peak is observed in the range spanning from 0.005 ?m to 0.1 ?m inclusive, and a peak is also observed in the range spanning from over 0.1 ?m to not more than 1 ?m. When P1 represents the peak intensity in the range spanning from 0.005 ?m to 0.1 ?m inclusive, and P2 represents the peak intensity in the range spanning from over 0.1 ?m to not more than 1 ?m, the value of P2/P1 is 0.2-10 inclusive. It is preferable that the inorganic oxide be tin oxide.

Abstract: Disclosed is a tin oxide containing antimony and at least one element A selected from the group consisting of tantalum, tungsten, niobium, and bismuth. The antimony and the at least one element A selected from the group consisting of tantalum, tungsten, niobium, and bismuth are preferably dissolved in a solid state in tin oxide. The ratio of the number of moles of the element A to the number of moles of antimony, i.e., [(the number of moles of the element A/the number of moles of antimony)], is preferably 0.1 to 10.

Abstract: Disclosed is a tin oxide containing antimony and at least one element A selected from the group consisting of tantalum, tungsten, niobium, and bismuth. The antimony and the at least one element A selected from the group consisting of tantalum, tungsten, niobium, and bismuth are preferably dissolved in a solid state in tin oxide. The ratio of the number of moles of the element A to the number of moles of antimony, i.e., [(the number of moles of the element A/the number of moles of antimony)], is preferably 0.1 to 10.

Abstract: In this fuel cell electrode catalyst layer, a catalyst is supported on a carrier comprising inorganic oxide particles. The fuel cell electrode catalyst layer is provided with a porous structure. When a mercury penetration method is used to measure the pore size distribution of the porous structure, a peak is observed in the range spanning from 0.005 ?m to 0.1 ?m inclusive, and a peak is also observed in the range spanning from over 0.1 ?m to not more than 1 ?m. When P1 represents the peak intensity in the range spanning from 0.005 ?m to 0.1 ?m inclusive, and P2 represents the peak intensity in the range spanning from over 0.1 ?m to not more than 1 ?m, the value of P2/P1 is 0.2-10 inclusive. It is preferable that the inorganic oxide be tin oxide.

Abstract: With respect to a reflection-type display device, an Al-based alloy material for a reflective film, which has excellent reflective characteristics and can be directly bonded to a transparent electrode layer such as ITO and IZO is provided. The present invention is Al—Ni—B alloy material for a reflective film, comprising aluminum containing nickel and boron, wherein a nickel content is 1.5-4 at %, a boron content is 0.1-0.5 at %, and the balance is aluminum. It is more preferable if the nickel content is 1.5-3 at %, and the boron content is 0.1-0.4 at %.

Abstract: To provide an Al—Ni alloy wiring electrode material, which has flexibility suitable for organic EL, can be directly bonded to a transparent electrode layer of ITO or the like, and is excellent in corrosion resistance against developers. An Al—Ni alloy wiring electrode material containing aluminum, nickel and boron, wherein the material contains a total of 0.35 at % to 1.2 at % of nickel and boron with the balance being aluminum. It is also preferred that the Al—Ni alloy wiring electrode material contain 0.3 at % to 0.7 at % of nickel and 0.05 at % to 0.5 at % of boron.

Abstract: An Aluminum-Nickel alloy wiring material includes Aluminum, Nickel, Cerium, and Boron. A thin film transistor includes the Aluminum-Nickel alloy wiring material. A sputtering target comprises Aluminum, Nickel, Cerium and Boron. A method of manufacturing a thin film transistor substrate comprises disposing a thin film transistor on a substrate, wherein the thin film transistor includes a wiring circuit layer comprising Aluminum, Nickel, Cerium, and Boron. The Nickel, Cerium and Boron satisfy the following inequalities; 0.5?X?5.0, 0.01?Y?1.0, and 0.01?Z?1.0, respectively, wherein X represents an atomic percentage of Nickel content, Y represents an atomic percentage of Cerium content, and Z represents an atomic percentage of Boron content.

Abstract: With respect to a reflection-type display device, an Al-based alloy material for a reflective film, which has excellent reflective characteristics and can be directly bonded to a transparent electrode layer such as ITO and IZO is provided. The present invention is Al—Ni—B alloy material for a reflective film, comprising aluminum containing nickel and boron, wherein a nickel content is 1.5-4 at %, a boron content is 0.1-0.5 at %, and the balance is aluminum. It is more preferable if the nickel content is 1.5-3 at %, and the boron content is 0.1-0.4 at %.

Abstract: A p-type thermoelectric material is prepared by mixing and melting at least two members selected from bismuth, tellurium, selenium, antimony, and sulfur to obtain an alloy ingot; grinding the alloy ingot to obtain powder of the allow mass; and hot pressing the powder. At least the hot pressing is carried out in the presence of any one of hexane and solvents represented by CnH2n+1OH or CnH2n+2CO (where n is 1, 2 or 3). A dopant may be used at the step of mixing.

Abstract: A method of preparing an n-type thermoelectric material includes forming an alloyed ingot by mixing and melting a dopant to be added optionally and at least two elements selected from the group consisting of bismuth, tellurium, selenium, antimony, and sulfur to obtain a material mixture, and by cooling the material mixture. The method also includes pulverizing the alloyed ingot to obtain pulverized powder; sintering the pulverized powder at normal pressure to obtain a half sintered body; and subjecting the half sintered body to hot press performed at pressure more than the normal pressure.

Abstract: A thermoelectric material is prepare by mixing and melting at least two members selected from bismuth, tellurium, selenium, antimony, and sulfur to obtain an alloy ingot; grinding the alloy ingot to obtain powder of the alloy ingot; and hot pressing the powder of the alloy ingot. The hot pressing is performed under the conditions of a temperature of 500° C. or higher and 600° C. or lower and a pressure of 20 MPa or higher and 45 MPa or lower.

Abstract: A p-type thermoelectric material is prepared by mixing and melting at least two members selected from bismuth, tellurium, selenium, antimony, and sulfur to obtain an alloy ingot, grinding the alloy ingot to obtain powder of the allow mass; and hot pressing the powder. At least the hot pressing is carried out in the presence of any one of hexane and solvents represented by CnH2n+1OH or CnH2n+2CO (where n is 1, 2 or 3). A dopant may be used at the step of mixing.