Abstract: A spin current magnetization rotating element includes: a first ferromagnetic layer having a magnetization direction which is changeable; and a spin-orbit torque wiring layer adjacent to the first ferromagnetic layer. At least one element in the spin-orbit torque writing layer has a crystal structure in which, when dimensions of a lattice constant of the crystal structure are expressed by a, b, and c: atoms occupy internal coordinates: (0, 0, 0), (0.5, 0.5, 0), (0.25, 0.75, 0.25), (0.75, 0.25, 0.25), (0, 0.5, 0.5), (0.5, 0, 0.5), (0.75, 0.75, 0.75), and (0.25, 0.25, 0.75); ab planes are laminated so as to have a four-time spiral structure along c axis; and an angle between a axis and b axis (?) is in a range of 60°???120°, and a ratio of b to a (b/a) is in a range of 0.2?b/a?1.0.