Abstract: A semiconductor module includes a conductive substrate, a plurality of first semiconductor elements, and a plurality of second semiconductor elements. The conductive substrate includes a first conductive portion to which the plurality of first semiconductor elements are electrically bonded, and a second conductive portion to which the plurality of second semiconductor elements are electrically bonded. The semiconductor module further includes a first input terminal, a second input terminal, and a third input terminal that are provided near the first conductive portion. The second input terminal and the third input terminal are spaced apart from each other with the first input terminal therebetween. The first input terminal is electrically connected to the first conductive portion. A polarity of the first input terminal is set to be opposite to a polarity of each of the second input terminal and the third input terminal.

Abstract: A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion.

Abstract: A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

Abstract: A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion.

Abstract: A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

Abstract: A semiconductor device includes two semiconductor elements for switching, a first conductor electrically connecting the second electrodes of the two semiconductor elements, a second conductor electrically connecting the second electrodes, and a first power terminal electrically connected to the first conductor and the second electrodes of the first semiconductor elements. The two first semiconductor element are connected in parallel with each other. A first conduction path and a second conduction path are provided between the second electrodes of the two semiconductor elements and extend through the first conductor and the second conductor, respectively. The first conduction path and the second conduction path are at least partially in parallel. The combined inductance of the first conduction path and the second conduction path is smaller than the inductance of the first conduction path.

Abstract: A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion.

Abstract: A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion.

Abstract: A semiconductor module includes a conductive substrate, a plurality of first semiconductor elements, and a plurality of second semiconductor elements. The conductive substrate includes a first conductive portion to which the plurality of first semiconductor elements are electrically bonded, and a second conductive portion to which the plurality of second semiconductor elements are electrically bonded. The semiconductor module further includes a first input terminal, a second input terminal, and a third input terminal that are provided near the first conductive portion. The second input terminal and the third input terminal are spaced apart from each other with the first input terminal therebetween. The first input terminal is electrically connected to the first conductive portion. A polarity of the first input terminal is set to be opposite to a polarity of each of the second input terminal and the third input terminal.

Abstract: A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

Abstract: A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

Abstract: A semiconductor device includes two first switching elements mounted on a first die pad. Each of the two first switching elements includes a first control electrode connected to a first control lead by a first control connection member. The first control connection member includes a lead connector connected to the first control lead and electrode connectors connected between the lead connector and the first control electrodes of the first switching elements. The electrode connectors are equal in length. Thus, the connection members between the first control lead and the first control electrodes of the first switching elements are equal in length.

Abstract: A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion.

Abstract: A semiconductor device includes: a first conductive plate having a first obverse face facing in a thickness direction; a second conductive plate located apart from the first conductive plate in a first direction crossing the thickness direction and having a second obverse face facing in the same direction as the first obverse face; semiconductor elements joined to the first obverse face; and a conductive member. The semiconductor elements each include an electrode opposite to the first obverse face. The conductive member includes a main body portion, first junction portions individually and electrically joined to the electrodes of the semiconductor elements, and a second junction portion electrically joined to the second obverse face. Moreover, the conductive member includes a first connection portion connecting the main body portion and the first junction portions, and a second connection portion connecting the main body portion and the second junction portion.

Abstract: A semiconductor module includes a conductive substrate, a plurality of first semiconductor elements, and a plurality of second semiconductor elements. The conductive substrate includes a first conductive portion to which the plurality of first semiconductor elements are electrically bonded, and a second conductive portion to which the plurality of second semiconductor elements are electrically bonded. The semiconductor module further includes a first input terminal, a second input terminal, and a third input terminal that are provided near the first conductive portion. The second input terminal and the third input terminal are spaced apart from each other with the first input terminal therebetween. The first input terminal is electrically connected to the first conductive portion. A polarity of the first input terminal is set to be opposite to a polarity of each of the second input terminal and the third input terminal.

Abstract: A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

Abstract: This heat-resistant sintered material has, as an overall composition, a composition including, in terms of % by mass, Cr: 15% to 30%, Ni: 8% to 30%, Si: 2.0% to 6.0%, and C: 0.5% to 2.5% with a remainder being Fe and inevitable impurities, wherein the heat-resistant sintered material has a structure in which hard phases are dispersed in a matrix, the matrix includes Fe, Cr, Ni, and Si, the hard phase includes Fe, Cr, and C, and a porosity is 2.0% or less.

Abstract: A heat-resistant sintered sliding member according to the present invention has a structure in which a lubrication phase is dispersed in a matrix, in which an entire composition of the sliding member is composed of a composition containing, by mass %, Cr: 18% to 35%, Mo: 0.3% to 15%, Ni: 0% to 30%, Si: 0.5% to 6%, S: 0.2% to 4.0%, P: 0% to 1.2%, B: 0% to 0.8%, and a Fe balance containing inevitable impurities, in which the matrix is a Fe—Cr—Mo—Si-based matrix or a Fe—Cr—Mo—Ni—Si-based matrix, the lubrication phase contains chromium sulfide, and a porosity of an entire sliding member is 2.0% or less.

Abstract: This heat-resistant sintered material has, as an overall composition, a composition including, in terms of % by mass, Cr: 15% to 30%, Ni: 8% to 30%, Si: 2.0% to 6.0%, and C: 0.5% to 2.5% with a remainder being Fe and inevitable impurities, wherein the heat-resistant sintered material has a structure in which hard phases are dispersed in a matrix, the matrix includes Fe, Cr, Ni, and Si, the hard phase includes Fe, Cr, and C, and a porosity is 2.0% or less.

Abstract: A superconducting cable includes a superconducting conductor layer; and a flow path of a coolant cooling the superconducting conductor layer to a superconducting state. This cable includes a core including the superconducting conductor layer and an insulating layer; a coolant tube forming a coolant flow path and arranged in parallel to the core so as to cool the superconducting conductor layer; and a housing tube of the core and the coolant tube.