Abstract: A display device includes a plurality of picture elements, wherein a first electrode is formed in each of the plurality of picture elements, a cover layer is formed such that an opening of the first electrode is formed, a spacer in a layer identical to the cover layer is provided between two of the first electrodes, the spacer is formed with a height greater than a height of the cover layer, and an outer edge portion of the spacer is spaced from an outer edge portion of the cover layer.

Abstract: In a flexible organic EL display device, a first resin layer, which has an opening overlapping with a first conductive member, an opening overlapping with a second conductive member, and an opening and an opening overlapping with a third conductive member, is formed to fill a slit.

Abstract: Provided is an active matrix substrate provided with a substrate (1), a peripheral circuit that includes a first oxide semiconductor thin-film transistor (TFT) (101), a plurality of second oxide semiconductor TFTs (102) disposed in a display area, and a first inorganic insulating layer (11) covering the plurality of second oxide semiconductor TFTs (102), the first oxide semiconductor TFT (101) having a lower gate electrode (3A), a gate insulating layer (4), an oxide semiconductor (5A) disposed so as to face the lower gate electrode with the gate insulating layer interposed therebetween, a source electrode (7A) and a drain electrode (8A), and an upper gate electrode (BG) disposed on the oxide semiconductor (5A) with an insulating layer that includes the first inorganic insulating layer (11) interposed therebetween, and furthermore having, on the upper gate electrode (BG), a second inorganic insulating layer (17) covering the first oxide semiconductor TFT (101).

Abstract: A display device production method for producing a display device including a light emitting element in an active region and a terminal in a non-active region. The display device production method includes arranging a first mask overlapping with an electrode region of the light emitting element and a second mask overlapping with the terminal, on a conductive film that is arranged in the active region and the non-active region and that covers the terminal, and etching the conductive film.

Abstract: The display device includes: a TFT layer; a light-emitting layer in an upper layer than the TFT layer; a first inorganic sealing film in an upper layer than the light-emitting layer; and a second inorganic sealing film in an upper layer than the first inorganic sealing film. An organic edge film is provided on a peripheral edge of a frame region surrounding a display region. The second inorganic sealing film overlaps with an upper face of the organic edge film, and an end face of the organic edge film and an end face of the second inorganic sealing film are aligned with each other.

Abstract: In a display region of a display device, opening portions are formed in at least one layer of an inorganic insulating film making up a TFT layer in such a manner as to penetrate the inorganic insulating film to thereby expose an upper surface of a resin substrate, opening flattening films are provided in such a manner as to fill in the opening portions, and metallic layers are provided in such a manner as to cover upper surfaces of the opening flattening films.

Abstract: To reduce a possibility of short circuiting between a wiring line that connects to a terminal unit and a pixel electrode, a display device is provided that includes a first lead wiring line that extends from a display area to a frame area while intersecting with an end portion of a flattening film, a second lead wiring line that is in a layer more on an upper side than the first lead wiring line and extends to a terminal unit while coming into contact with and intersecting with a first bank formed in a periphery of a second electrode, and a first wiring line contact part through which the first lead wiring line and the second lead wiring line connect to each other, the first wiring line contact part being provided between an end portion of the flattening film and the first bank.

Abstract: An etching device includes a chemical treatment tank configured to allow a substrate to be transported in an interior thereof, and a spraying unit disposed in the interior of the chemical treatment tank, including a blowing port oriented in a direction that does not intersect a front face of the substrate, and configured to spray an etchant chemical solution as a mist through the blowing port.

Abstract: A display device configured so that a light-emitting element layer (5) is provided so as to include, in an active region (DA), a first electrode (22), an EL layer (24), and a second electrode (25), the display device including an inorganic insulating film (23) which covers an edge of the first electrode.

Abstract: A display device includes a TFT layer provided with a terminal configured to receive a signal inputted from an external source, and a terminal wiring line in a lower layer underlying the terminal, and a light emitting element layer in an upper layer overlying the TFT layer. The terminal includes a main portion and a peripheral portion surrounding the main portion. The peripheral portion is covered by a cover film, the terminal wiring line and a lower face of the peripheral portion are in contact, and the main portion and the terminal wiring line overlap via at least one terminal base film.

Abstract: A portion of a resin film is precisely cut out when the resin film is peeled off. A rear surface of a glass substrate on which a protrusion is formed is irradiated with a laser beam to peel a resin film from the glass substrate. Then, the protrusion and the resin film formed on the protrusion are left on the glass substrate.

Abstract: A display device including: a plurality of subpixels (SP) each including (i) a first electrode (22), (ii) a bank (23) covering an edge of the first electrode, (iii) an EL layer (24) provided in a layer higher than the first electrode, and (iv) a second electrode (25) provided in a layer higher than the EL layer, the bank having a first sloped part (23x) and a second sloped part (23y), the second sloped part having an inclination smaller than that of the first sloped part.

Abstract: A first weir wall and a second weir wall are formed in a frame region, the first weir wall being made of a material of a planarizing film and being formed so as to surround a display region and to overlap a peripheral end of an organic layer of a sealing film, and the second weir wall being made of a material of an edge cover and being formed around the first weir wall so as to overlap an edge of the peripheral end of the organic layer. The first weir wall has a groove formed in its upper surface so as to extend around the display region.

Abstract: In a display region of a display device, opening portions are formed in at least one layer of an inorganic insulating film making up a TFT layer in such a manner as to penetrate the inorganic insulating film to thereby expose an upper surface of a resin substrate, opening flattening films are provided in such a manner as to fill in the opening portions, and metallic layers are provided in such a manner as to cover upper surfaces of the opening flattening films.

Abstract: A display device production method for producing a display device including a light emitting element in an active region and a terminal in a non-active region. The display device production method includes arranging a first mask overlapping with an electrode region of the light emitting element and a second mask overlapping with the terminal, on a conductive film that is arranged in the active region and the non-active region and that covers the terminal, and etching the conductive film.

Abstract: A first damming wall and a second damming wall are provided in a frame region. The first damming wall surrounds a display region formed from a first organic material and overlaps with a circumferential end part of an organic layer. The second damming wall includes a top part formed from a second organic material in the periphery of the first damming wall, and overlaps with an edge of the circumferential end part of the organic layer. The second damming wall includes a bottom part located closer to a base substrate, the bottom part being formed from a material constituting parts of switching elements.

Abstract: The photomask includes: transmissive portions configured to form the opening portion, a semi-transmitted light portion configured to form the planar portion, and a light blocking portion configured to form each of the plurality of photo spacer portions. The light blocking portion is formed in an island shape between the transmissive portions arranged in a lattice shape, and an end portion of the light blocking portion is formed to extend, between two of the transmissive portions, along outer edges of the two of the transmissive portions.

Abstract: A display device is provided that may prevent peeling of a sealing layer between a first partition and a second partition formed at an end portion of the sealing layer that seals a light emitting layer. An organic EL display device includes a sealing layer that is configured to seal a light emitting element layer and is doubly enclosed at an end portion by a first bank and a second bank that is formed more on the outer side than the first bank with a gap in between. An outer side wall surface of the first bank facing the second bank is formed as a gentle slope with an inclination angle smaller than an inner side wall surface of the first bank on the side opposite to the second bank.

Abstract: An active matrix substrate includes a substrate, a TFT-containing layer which is supported on the substrate, and which includes a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes of the TFT, a metal wiring layer which is supported on the substrate and has a thickness of 400 nm or more, and an inorganic insulating layer which is thinner than the metal wiring layer, and is arranged on a substrate side of the metal wiring layer and is in contact with a lower surface of the metal wiring layer. The metal wiring layer has tensile stress and the inorganic insulating layer has compressive stress, and a ratio Sb/Sa of an absolute value Sb of a stress value of the inorganic insulating layer to an absolute value Sa of a stress value of the metal wiring layer is 0.6 or more and 1.7 or less.

Abstract: A spacer is fixed while an effect on a surface of an active matrix substrate is prevented. An active matrix substrate (1) includes a thin film transistor (11) which is provided on a substrate (2) and which has a recess made at a surface of the thin film transistor, and a spacer (13) fitted in the recess.