Patents by Inventor Ryosuke Hiramatsu
Ryosuke Hiramatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240077233Abstract: Magnetic cold storage material particles with a low breakage rate in the case of being subjected to long-term vibration caused by operation of a refrigerator under a cryogenic temperature are provided. A cold storage device and a refrigerator, each of which includes the above-described magnetic cold storage material particles and does not degrade refrigeration performance under long-term operation, are provided. Apparatuses provided with this refrigerator, such as a superconducting magnet, are provided. Each magnetic cold storage material particle of the embodiment is composed of an intermetallic compound containing a rare earth element, and an area percentage of voids present in its cross-section is 0.0001% or more and 15% or less. Each of the cold storage device of the embodiment, the refrigerator of the embodiment, and the apparatuses provided with this refrigerator, such as a superconducting magnet, includes the magnetic cold storage material particles of the embodiment.Type: ApplicationFiled: October 19, 2023Publication date: March 7, 2024Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Takahiro KAWAMOTO, Daichi USUI, Ryosuke HIRAMATSU
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Publication number: 20230303904Abstract: A cold storage material of an embodiment includes a rare earth oxysulfide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and a first group element of 0.001 atom % or more and 10 atom % or less, in which a maximum value of volume specific heat in a temperature range of 2 K or more and 10 K or less is 0.5 J/(cm3·K) or more.Type: ApplicationFiled: May 24, 2023Publication date: September 28, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Takahiro KAWAMOTO, Daichi USUI, Ryosuke HIRAMATSU, Hiroyasu KONDO, Seina TAGUCHI
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Publication number: 20220002166Abstract: According to one embodiment, a tungsten oxide powder is provided. The tungsten oxide has an average particle size along a major axis of 10 ?m or less, an average aspect ratio of 10 or less, and 0 to 4 crystal defects per unit area of 9 nm2 on a surface or sectional surface in a direction of a minor axis of a primary particle.Type: ApplicationFiled: September 21, 2021Publication date: January 6, 2022Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Daisuke FUKUSHI, Hideaki HIRABAYASHI, Akito SASAKI, Ryosuke HIRAMATSU, Atsuya SASAKI, Takaki MOROOKA, Yoichiro MORI
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Patent number: 11211529Abstract: A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01?O8nm/O3nm?0.5 is satisfied, where O3nm (at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O8nm (at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.Type: GrantFiled: February 5, 2020Date of Patent: December 28, 2021Assignees: TOSHIBA MATERIALS CO., LTD., MEIJO UNIVERSITYInventors: Ryosuke Hiramatsu, Atsuya Sasaki, Hideaki Hirabayashi, Satoshi Kamiyama
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Patent number: 11211526Abstract: A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.Type: GrantFiled: September 16, 2019Date of Patent: December 28, 2021Assignees: TOSHIBA MATERIALS CO., LTD., MEIJO UNIVERSITYInventors: Satoshi Kamiyama, Atsuya Sasaki, Ryosuke Hiramatsu, Hideaki Hirabayashi
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Patent number: 10711186Abstract: Embodiments of the present invention provide a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity and further a light-emitting device employing that phosphor. The phosphor is activated by manganese and has a basic structure comprising at least one element selected from the group consisting of potassium, sodium and calcium; at least one element selected from the group consisting of silicon and titanium; and fluorine. In an IR absorption spectrum of the phosphor, the intensity ratio of the peak in 3570 to 3610 cm?1 to that in 1200 to 1240 cm?1 is 0.1 or less.Type: GrantFiled: July 26, 2017Date of Patent: July 14, 2020Assignees: Kabushiki Kaisha Toshiba, TOSHIBA MATERIALS CO., LTD.Inventors: Ryosuke Hiramatsu, Keiko Albessard, Kunio Ishida, Yasushi Hattori, Masahiro Kato
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Publication number: 20200176633Abstract: A semiconductor light-emitting element according to an embodiment has a light emission peak wavelength not less than 380 nm and not more than 425 nm. The semiconductor light-emitting element includes a stacked structure including a reflective layer, a substrate provided on the reflective layer, and a semiconductor layer provided on the substrate. An uneven structure is provided in a surface of the substrate on the semiconductor layer side. The semiconductor layer includes a buffer layer made of aluminum nitride and having a thickness not less than 10 nm and not more than 100 nm. The buffer layer includes oxygen; and 0.01?O8nm/O3nm?0.5 is satisfied, where O3nm (at %) is the oxygen concentration at a depth of 3 nm of the buffer layer, and O8nm (at %) is the oxygen concentration at a depth of 8 nm of the buffer layer.Type: ApplicationFiled: February 5, 2020Publication date: June 4, 2020Applicants: TOSHIBA MATERIALS CO., LTD., Meijo UniversityInventors: Ryosuke HIRAMATSU, Atsuya SASAKI, Hideaki HIRABAYASHI, Satoshi KAMIYAMA
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Publication number: 20200013924Abstract: A semiconductor light-emitting element having an emission peak wavelength of 395 nm or more and 425 nm or less, comprises: a substrate including a first surface and a second surface, at least one surface selected from the group consisting of the first and second surfaces having an uneven region; a semiconductor layer on the first surface; and a multilayer reflective film on the second surface or the semiconductor layer, wherein the multilayer reflective film includes a structure having a plurality of first dielectric films and a plurality of second dielectric films, the first dielectric films and the second dielectric films being alternately stacked.Type: ApplicationFiled: September 16, 2019Publication date: January 9, 2020Applicants: TOSHIBA MATERIALS CO., LTD., Meijo UniversityInventors: Satoshi KAMIYAMA, Atsuya SASAKI, Ryosuke HIRAMATSU, Hideaki HIRABAYASHI
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Patent number: 10519368Abstract: A red-light emitting phosphor is provided, having a basic composition represented by Ka(Si1-x,Mnx)Fb and also having a particular Raman spectrum, wherein the intensity ratio I1/I0, which is a ratio of (I1) the peak in a Raman shift of 600±10 cm?1 assigned to Mn—F bonds in the crystal to that (I0) in a Raman shift of 650±10 cm?1 assigned to Si—F bonds in the crystal, is 0.09 to 0.22. This phosphor is produced by bringing a silicon source in contact with an aqueous reaction solution containing potassium permanganate and hydrogen fluoride, wherein a molar ratio of hydrogen fluoride to potassium permanganate is 87 to 127.Type: GrantFiled: June 7, 2016Date of Patent: December 31, 2019Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Ryosuke Hiramatsu, Jun Tamura, Kunio Ishida, Keiko Albessard, Masahiro Kato
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Patent number: 10032967Abstract: A phosphor comprising: a chemical composition expressed by the following formula (K1-p, Mp)a(Si1-y, Mny)Fb (M is at least one element selected from the group consisting of Na and Ca, and p satisfies 0?p?0.01, a satisfies 1.5?a?2.5, b satisfies 5.5?b?6.5, and y satisfies 0<y?0.1), Wherein the phosphor satisfies I (2,500-3,000)/I (1,200-1,240)<0.04, when I (1,200-1,240) is an intensity of a highest peak in a range of 1,200-1,240 cm?1 and I (2,500-3,000) is an intensity of a highest peak in a range of 2,500-3,000 cm?1 in an infrared spectrum.Type: GrantFiled: March 9, 2017Date of Patent: July 24, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Keiko Albessard, Ryosuke Hiramatsu, Kunio Ishida, Yasushi Hattori, Masahiro Kato
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Patent number: 10020427Abstract: The present invention provides a red-light emitting phosphor that exhibits high luminous efficacy and emits light when excited by light having an emission peak in the blue region; and a method for manufacturing said phosphor. The phosphor represented by general formula (A): a(Si1-x-y,Tix,Mny)Fb and also characterized in that the half-band width of a diffraction pattern attributed to the (400) plane is not less than 0.2° determined by X-ray powder diffractometry. This phosphor can be manufactured by preparing a reaction solution consisting of an aqueous solution containing potassium permanganate and hydrogen fluoride, immersing a silicon source in said reaction solution, and reacting them for 20 to 80 minutes.Type: GrantFiled: September 9, 2015Date of Patent: July 10, 2018Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Ryosuke Hiramatsu, Keiko Albessard, Naotoshi Matsuda, Masahiro Kato
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Patent number: 9954146Abstract: The present invention provides a red-light emitting phosphor having high luminous efficacy and also a manufacturing method thereof. The phosphor is a red-light emitting phosphor mainly comprising potassium fluorosilicate and having a basic surface composition represented by the formula (A): KaSiFb. The disclosed phosphor is characterized by being activated by manganese and also characterized in that the amount of manganese on the surface is not more than 0.2 mol % based on the total amount of all the elements on the surface. This phosphor can be manufactured by washing with a weak acid a product obtained by placing a silicon source to react in contact with a reaction solution containing potassium permanganate.Type: GrantFiled: September 10, 2015Date of Patent: April 24, 2018Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTDInventors: Ryosuke Hiramatsu, Keiko Albessard, Naotoshi Matsuda, Masahiro Kato
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Publication number: 20180006194Abstract: A phosphor comprising: a chemical composition expressed by the following formula (K1-p, Mp)a(Si1-y, Mny)Fb (M is at least one element selected from the group consisting of Na and Ca, and p satisfies 0?p?0.01, a satisfies 1.5?a?2.5, b satisfies 5.5?b?6.5, and y satisfies 0<y?0.1), Wherein the phosphor satisfies I (2,500-3,000)/I (1,200-1,240)<0.04, when I (1,200-1,240) is an intensity of a highest peak in a range of 1,200-1,240 cm?1 and I (2,500-3,000) is an intensity of a highest peak in a range of 2,500-3,000 cm?1 in an infrared spectrum.Type: ApplicationFiled: March 9, 2017Publication date: January 4, 2018Applicant: kabushiki Kaisha ToshibaInventors: Keiko ALBESSARD, Ryosuke HIRAMATSU, Kunio ISHIDA, Yasushi HATTORI, Masahiro KATO
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Publication number: 20170335183Abstract: Embodiments of the present invention provide a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity and further a light-emitting device employing that phosphor. The phosphor is activated by manganese and has a basic structure comprising at least one element selected from the group consisting of potassium, sodium and calcium; at least one element selected from the group consisting of silicon and titanium; and fluorine. In an IR absorption spectrum of the phosphor, the intensity ratio of the peak in 3570 to 3610 cm?1 to that in 1200 to 1240 cm?1 is 0.1 or less.Type: ApplicationFiled: July 26, 2017Publication date: November 23, 2017Applicants: Kabushiki Kaisha Toshiba, TOSHIBA MATERIALS CO., LTD.Inventors: Ryosuke HIRAMATSU, Keiko ALBESSARD, Kunio ISHIDA, Yasushi HATTORI, Masahiro KATO
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Patent number: 9520540Abstract: A light-emitting device of an embodiment includes a light-emitting element emitting blue excitation light and a first phosphor excited by the blue excitation light and emitting fluorescence. A peak wavelength of the fluorescence is not shorter than 520 nm and shorter than 660 nm and the peak wavelength of the fluorescence shifting in the same direction when a peak wavelength of the blue excitation light shifts. The first phosphor is one of a yellow phosphor emitting yellow fluorescence, a green phosphor emitting green fluorescence, a yellow-green/yellow phosphor emitting yellow-green/yellow fluorescence and a red phosphor emitting red fluorescence.Type: GrantFiled: February 20, 2014Date of Patent: December 13, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Kunio Ishida, Keiko Albessard, Yasushi Hattori, Iwao Mitsuishi, Yumi Fukuda, Ryosuke Hiramatsu, Aoi Okada, Masahiro Kato
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Publication number: 20160340577Abstract: To provide a red-light emitting phosphor having high luminous efficacy, also a light-emitting device, and further a manufacturing method of the phosphor. Disclosed is a red-light emitting phosphor having a basic composition represented by Ka(Si1-x,Mnx)Fb and also having a particular Raman spectrum. In the spectrum, the intensity ratio of the peak in a Raman shift of 600±10 cm?1 assigned to Mn—F bonds in the crystal to that in a Raman shift of 650±10 cm?1 assigned to Si—F bonds in the crystal is 0.09 to 0.22. This phosphor can be produced by bringing a silicon source in contact with a reaction solution containing potassium permanganate and hydrogen fluoride in such amounts that the molar ratio of hydrogen fluoride to potassium permanganate is 87 to 127.Type: ApplicationFiled: June 7, 2016Publication date: November 24, 2016Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Ryosuke HIRAMATSU, Jun TAMURA, Kunio ISHIDA, Keiko ALBESSARD, Masahiro KATO
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Publication number: 20150380613Abstract: The present invention provides a red-light emitting phosphor having high luminous efficacy and also a manufacturing method thereof. The phosphor is a red-light emitting phosphor mainly comprising potassium fluorosilicate and having a basic surface composition represented by the formula (A): KaSiFb. The disclosed phosphor is characterized by being activated by manganese and also characterized in that the amount of manganese on the surface is not more than 0.2 mol % based on the total amount of all the elements on the surface. This phosphor can be manufactured by washing with a weak acid a product obtained by placing a silicon source to react in contact with a reaction solution containing potassium permanganate.Type: ApplicationFiled: September 10, 2015Publication date: December 31, 2015Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Ryosuke HIRAMATSU, Keiko ALBESSARD, Naotoshi MATSUDA, Masahiro KATO
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Publication number: 20150380614Abstract: The present invention provides a red-light emitting phosphor that exhibits high luminous efficacy and emits light when excited by light having an emission peak in the blue region; and a method for manufacturing said phosphor. The phosphor represented by general formula (A): a(Si1-x-y,Tix,Mny)Fb and also characterized in that the half-band width of a diffraction pattern attributed to the (400) plane is not less than 0.2° determined by X-ray powder diffractometry. This phosphor can be manufactured by preparing a reaction solution consisting of an aqueous solution containing potassium permanganate and hydrogen fluoride, immersing a silicon source in said reaction solution, and reacting them for 20 to 80 minutes.Type: ApplicationFiled: September 9, 2015Publication date: December 31, 2015Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Ryosuke HIRAMATSU, Keiko ALBESSARD, Naotoshi MATSUDA, Masahiro KATO
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Publication number: 20150247085Abstract: The embodiment of the present disclosure provides a phosphor exhibiting an emission peak in the wavelength range of 565 to 600 nm under excitation by light having a peak in the wavelength range of 250 to 500 nm. The emission peak has a half width of 115 to 180 nm inclusive. This phosphor has a crystal structure of Sr2Si7Al3ON13, and is activated by cerium.Type: ApplicationFiled: February 27, 2015Publication date: September 3, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Keiko ALBESSARD, Yumi FUKUDA, Kunio ISHIDA, Iwao MITSUISHI, Aoi OKADA, Yasushi HATTORI, Ryosuke HIRAMATSU, Masahiro KATO
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Patent number: 8974697Abstract: According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008?MCa/(MSr+MCa)?0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.Type: GrantFiled: August 31, 2012Date of Patent: March 10, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Keiko Albessard, Masahiro Kato, Yumi Fukuda, Iwao Mitsuishi, Takahiro Sato, Shigeya Kimura, Aoi Okada, Naotoshi Matsuda, Ryosuke Hiramatsu, Yasushi Hattori, Kunio Ishida, Hironori Asai