Patents by Inventor Ryosuke ISHIMARU

Ryosuke ISHIMARU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrode structure and semiconductor light-emitting device
    Patent number: 11901489
    Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.
    Type: Grant
    Filed: April 26, 2023
    Date of Patent: February 13, 2024
    Assignee: ROHM CO., LTD.
    Inventors: Ryosuke Ishimaru, Yohei Ito, Yasuo Nakanishi
  • ELECTRODE STRUCTURE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
    Publication number: 20230261145
    Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.
    Type: Application
    Filed: April 26, 2023
    Publication date: August 17, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Ryosuke ISHIMARU, Yohei ITO, Yasuo NAKANISHI
  • SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    Publication number: 20230253526
    Abstract: A semiconductor light-emitting element includes a substrate having a first surface, a plurality of protrusions disposed, with spacing opened between one another, on the first surface, a buffer layer disposed to cover the plurality of protrusions and the first surface positioned between the plurality of protrusions, a dimension of the buffer layer in a first direction orthogonal to the first surface being smaller than a dimension in the first direction of each of the plurality of protrusions, an n-type semiconductor layer that is disposed on the buffer layer and is doped with an n-type impurity, an active layer disposed on the n-type semiconductor layer, and a p-type semiconductor layer that is disposed on the active layer and is doped with a p-type impurity.
    Type: Application
    Filed: January 26, 2023
    Publication date: August 10, 2023
    Inventors: Ryosuke Ishimaru, Kazuaki Tsutsumi, Takao Fujimori
  • Electrode structure and semiconductor light-emitting device having a high region part and a low region part
    Patent number: 11664477
    Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.
    Type: Grant
    Filed: January 10, 2020
    Date of Patent: May 30, 2023
    Assignee: ROHM CO., LTD.
    Inventors: Ryosuke Ishimaru, Yohei Ito, Yasuo Nakanishi
  • ELECTRODE STRUCTURE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
    Publication number: 20200274030
    Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.
    Type: Application
    Filed: January 10, 2020
    Publication date: August 27, 2020
    Applicant: ROHM CO., LTD.
    Inventors: Ryosuke ISHIMARU, Yohei ITO, Yasuo NAKANISHI