Abstract: Provided is a cosmetic suitable for high-temperature low-humidity environments. A cosmetic containing a functional polymer in which a temperature-responsive polymer and a hydrophilic polymer form an interpenetrating polymer network structure or a semi-interpenetrating polymer network structure.

Abstract: A pressure sensor includes: a pressure receiver having a diaphragm portion that is deformed by receiving pressure on a pressure receiving surface thereof, and a rim portion formed around and integrally with the diaphragm portion and formed to be thicker than the diaphragm portion; and a semiconductor substrate that is connected to a reverse surface of the pressure receiving surface and detects strain in the diaphragm portion by means of a resonating strain gauge. The pressure receiver is formed of ceramic. The semiconductor substrate has: a base portion provided to face the reverse surface; and a connected portion that protrudes from the base portion toward the reverse surface and has a connected surface connected to the reverse surface. The connected portion has an area smaller than an area of the base portion in a case where the pressure sensor is viewed from a direction perpendicular to the reverse surface.

Abstract: An aspect of the present invention is an electrode which includes an active material layer, and an insulating layer layered on a surface of the active material layer, in which the insulating layer contains a filler and a first binder, and a content of the first binder in the insulating layer is 8% by mass or more. Another aspect of the present invention is an electrode which includes an active material layer, and an insulating layer layered on a surface of the active material layer, in which the insulating layer is a dry coating product containing a filler and a binder. Still another aspect of the present invention is a method for manufacturing an electrode, which includes the steps of forming an active material layer, and laminating an insulator containing a filler and a binder on a surface of the active material layer to form an insulating layer, in which the insulator does not contain a solvent.

Abstract: An aspect of the present invention is an electrode which includes an active material layer, and an insulating layer layered on a surface of the active material layer, in which the insulating layer contains a filler and a first binder, and a content of the first binder in the insulating layer is 8% by mass or more. Another aspect of the present invention is an electrode which includes an active material layer, and an insulating layer layered on a surface of the active material layer, in which the insulating layer is a dry coating product containing a filler and a binder. Still another aspect of the present invention is a method for manufacturing an electrode, which includes the steps of forming an active material layer, and laminating an insulator containing a filler and a binder on a surface of the active material layer to form an insulating layer, in which the insulator does not contain a solvent.

Abstract: In an electrode having a covering layer stacked on a composite layer, an increase in resistance of the electrode is suppressed. An electrode plate includes a composite layer including active material particles and a covering layer including filler particles stacked on the composite layer. In this electrode plate, a particle size (D30) of the active material particle is set to be equal to or smaller than a particle size (D50) of the filler particle.

Abstract: A three-dimensional memory device includes alternating stacks of insulating strips and electrically conductive strips located over a substrate, generally extending along a first horizontal direction, and laterally spaced apart from each other along a second horizontal direction by width-modulated line trenches, memory films located on a respective sidewall of the alternating stacks, the memory films containing a charge storage layer and blocking dielectric which generally extend along the first horizontal direction and laterally undulate along the second horizontal direction, and a plurality of discrete vertical semiconductor channels located on a sidewall of a respective one of the memory films.

Abstract: A three-dimensional memory device includes alternating stacks of insulating strips and electrically conductive strips located over a substrate, generally extending along a first horizontal direction, and laterally spaced apart from each other along a second horizontal direction by width-modulated line trenches, memory films located on a respective sidewall of the alternating stacks, generally extending along the first horizontal direction, and laterally undulating along the second horizontal direction, and a plurality of discrete vertical semiconductor channels located on a sidewall of a respective one of the memory films.

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a source-level sacrificial layer overlying a substrate. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory stack structures including a respective vertical semiconductor channel and a respective memory film are formed through the alternating stack. A source-level cavity is formed by removing the source-level sacrificial layer. Semiconductor pillar structures may be used to provide mechanical support to the alternating stack during formation of the source-level cavity. A source-level semiconductor material layer can be formed in the source-level cavity. The source-level semiconductor material layer adjoins bottom end portions of the vertical semiconductor channels and laterally surrounds the semiconductor pillar structures.

Abstract: In an electrode having a covering layer stacked on a composite layer, an increase in resistance of the electrode is suppressed. An electrode plate includes a composite layer including active material particles and a covering layer including filler particles stacked on the composite layer. In this electrode plate, a particle size (D30) of the active material particle is set to be equal to or smaller than a particle size (D50) of the filler particle.

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a source-level sacrificial layer overlying a substrate. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory stack structures including a respective vertical semiconductor channel and a respective memory film are formed through the alternating stack. A source-level cavity is formed by removing the source-level sacrificial layer. Semiconductor pillar structures may be used to provide mechanical support to the alternating stack during formation of the source-level cavity. A source-level semiconductor material layer can be formed in the source-level cavity. The source-level semiconductor material layer adjoins bottom end portions of the vertical semiconductor channels and laterally surrounds the semiconductor pillar structures.

Abstract: An aspect of the present invention is an electrode which includes an active material layer, and an insulating layer layered on a surface of the active material layer, in which the insulating layer contains a filler and a first binder, and a content of the first binder in the insulating layer is 8% by mass or more. Another aspect of the present invention is an electrode which includes an active material layer, and an insulating layer layered on a surface of the active material layer, in which the insulating layer is a dry coating product containing a filler and a binder. Still another aspect of the present invention is a method for manufacturing an electrode, which includes the steps of forming an active material layer, and laminating an insulator containing a filler and a binder on a surface of the active material layer to form an insulating layer, in which the insulator does not contain a solvent.

Abstract: A three-dimensional memory device includes alternating stacks of insulating strips and electrically conductive strips located over a substrate, generally extending along a first horizontal direction, and laterally spaced apart from each other along a second horizontal direction by width-modulated line trenches, memory films located on a respective sidewall of the alternating stacks, the memory films containing a charge storage layer and blocking dielectric which generally extend along the first horizontal direction and laterally undulate along the second horizontal direction, and a plurality of discrete vertical semiconductor channels located on a sidewall of a respective one of the memory films.

Abstract: A three-dimensional memory device includes alternating stacks of insulating strips and electrically conductive strips located over a substrate, generally extending along a first horizontal direction, and laterally spaced apart from each other along a second horizontal direction by width-modulated line trenches, memory films located on a respective sidewall of the alternating stacks, generally extending along the first horizontal direction, and laterally undulating along the second horizontal direction, and a plurality of discrete vertical semiconductor channels located on a sidewall of a respective one of the memory films.

Abstract: An object of the present invention is to provide an unfermented beer-taste beverage which has an appearance with foam like beer, but does not have the characteristic odor common to beers and non-alcohol beer-taste beverages associated with fermentation; an unfermented beer-taste beverage containing a soybean dietary fiber does not have the characteristic odor common to general beers and non-alcohol beer-taste beverages associated with fermentation; when the beer-taste beverage is poured into a glass or the like, a beer-like foam with a good appearance can be formed; the foam arising from the glass is a fine and minute foam like champagne, and the foam arises linearly; in addition, the beer-like foam makes the mouthfeel smooth, and further provides a texture.

Abstract: A portion of a charge trapping layer adjacent to a select drain gate electrode can be removed employing a differential-rate etch process that provides an accelerated etch rate to a doped portion with respect to an undoped portion. If a silicon nitride layer is employed as the charge trapping layer, then angled ion implantation of boron atoms to an upper portion of the silicon nitride layer can increase the etch rate of the boron-doped portion of the silicon nitride layer in phosphoric acid. The charge trapping layer is etched back such that a remaining portion of the charge trapping layer can be present only at levels of control gate electrodes, and absent at each level of select drain gate electrodes. Threshold voltage shift for the select drain gate electrodes can be eliminated or reduced by removal of the charge trapping layer at each level of the select drain gate electrodes.

Abstract: An object of the present invention is to provide an unfermented beer-taste beverage which has an appearance with foam like beer, but does not have the characteristic odor common to beers and non-alcohol beer-taste beverages associated with fermentation; an unfermented beer-taste beverage containing a soybean dietary fiber does not have the characteristic odor common to general beers and non-alcohol beer-taste beverages associated with fermentation; when the beer-taste beverage is poured into a glass or the like, a beer-like foam with a good appearance can be formed; the foam arising from the glass is a fine and minute foam like champagne, and the foam arises linearly; in addition, the beer-like foam makes the mouthfeel smooth, and further provides a texture.

Abstract: An object of the present invention is to provide an unfermented beer-taste beverage which has an appearance with foam like beer, but does not have the characteristic odor common to beers and non-alcohol beer-taste beverages associated with fermentation; an unfermented beer-taste beverage containing a soybean dietary fiber does not have the characteristic odor common to general beers and non-alcohol beer-taste beverages associated with fermentation; when the beer-taste beverage is poured into a glass or the like, a beer-like foam with a good appearance can be formed; the foam arising from the glass is a fine and minute foam like champagne, and the foam arises linearly; in addition, the beer-like foam makes the mouthfeel smooth, and further provides a texture.