Patents by Inventor RYOSUKE KIKUCHI

RYOSUKE KIKUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240103414
    Abstract: A fixing unit or device that can be used in an image forming apparatus includes a first heater element that is formed of a material that increases in electrical resistance with increases in temperature. A controller of the fixing unit is configured to vary a duty ratio of electric power applied to the first heater element during a start-up operation in which the temperature of the first heater element is raised to a target operating temperature. By varying the duty ratio during the start-up operation, changes in the resistance of the first heater element with the heating can be compensated. For example, the duty ratio can be increased during the course of the start-up to achieve the target operating temperature faster.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 28, 2024
    Inventors: Kiyotaka MURAKAMI, Kazuhiko KIKUCHI, Sasuke ENDO, Masaya TANAKA, Ryota SAEKI, Kousei MIYASHITA, Ryosuke KOJIMA, Yohei DOI, Yuki KAWASHIMA, Eiji SHINOHARA
  • Patent number: 11935971
    Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10?7 S/cm.
    Type: Grant
    Filed: August 24, 2022
    Date of Patent: March 19, 2024
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Tomoyasu Yokoyama, Ryosuke Kikuchi, Yu Nishitani
  • Publication number: 20240062967
    Abstract: A dielectric of the present disclosure includes a composite oxide having composition represented by LaxYyAl(1-x-y)Ok. In the composition, a requirement 0.1?x+y<0.50 is satisfied. The symbol k is a value for maintaining electroneutrality of the composite oxide.
    Type: Application
    Filed: October 16, 2023
    Publication date: February 22, 2024
    Inventor: Ryosuke KIKUCHI
  • Publication number: 20240047137
    Abstract: A dielectric of the present disclosure includes a composite oxide including at least two selected from the group consisting of Nb, Bi, and Ta, wherein the following requirement (I), (II), or (III) is satisfied: (I) the composite oxide includes Nb, Bi, and Ta; (II) the composite oxide includes Nb and Bi and is amorphous; and (III) the composite oxide includes Bi and Ta and is amorphous.
    Type: Application
    Filed: October 16, 2023
    Publication date: February 8, 2024
    Inventors: Ryosuke KIKUCHI, Hisanori MASHIKO
  • Publication number: 20240038452
    Abstract: A dielectric of the present disclosure includes a tantalum compound containing fluorine and oxygen and being amorphous, and is advantageous in terms of achieving a high dielectric constant.
    Type: Application
    Filed: October 12, 2023
    Publication date: February 1, 2024
    Inventors: Hisanori MASHIKO, Hideaki ADACHI, Michio SUZUKA, Takehito GOTO, Ryosuke KIKUCHI, Manabu KANOU
  • Publication number: 20240038411
    Abstract: A dielectric includes a composite oxide. The composite oxide has composition represented by CexAl1-xOk and is amorphous. In the composition represented by CexAl1-xOk, a requirement 0.400?x<0.900 is satisfied. The symbol k is a value for maintaining electroneutrality of the composite oxide.
    Type: Application
    Filed: October 12, 2023
    Publication date: February 1, 2024
    Inventors: Ryosuke KIKUCHI, Manabu KANOU
  • Patent number: 11651859
    Abstract: Disclosed is a method comprising acquiring a value relating to VEGF-A of a subject, wherein the value is a measured value of total VEGF-A in a blood sample, or a value obtained by dividing a measured value of VEGF-A165b in the blood sample by a measured value of total VEGF-A in the blood sample (VEGF-A165b/total VEGF-A), and the value suggests prognosis of myocardial infarction of the subject or severity of coronary artery disease of the subject.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: May 16, 2023
    Assignees: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, SYSMEX CORPORATION
    Inventors: Ryosuke Kikuchi, Kazuhiro Harada, Yohei Shibata, Hideki Ishii, Toyoaki Murohara
  • Patent number: 11626258
    Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.
    Type: Grant
    Filed: September 23, 2021
    Date of Patent: April 11, 2023
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Taisuke Matsui, Ryosuke Kikuchi, Tomoyasu Yokoyama, Fumiyasu Oba, Yu Kumagai
  • Publication number: 20220416099
    Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10?7 S/cm.
    Type: Application
    Filed: August 24, 2022
    Publication date: December 29, 2022
    Inventors: TOMOYASU YOKOYAMA, RYOSUKE KIKUCHI, YU NISHITANI
  • Patent number: 11417784
    Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: August 16, 2022
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Koki Ueno, Ryosuke Kikuchi, Toru Nakamura, Takahiro Kurabuchi, Yasushi Kaneko, Kazuhito Hato, Fumiyasu Oba, Yu Kumagai
  • Publication number: 20220013303
    Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.
    Type: Application
    Filed: September 23, 2021
    Publication date: January 13, 2022
    Inventors: TAISUKE MATSUI, RYOSUKE KIKUCHI, TOMOYASU YOKOYAMA, FUMIYASU OBA, YU KUMAGAI
  • Publication number: 20210408305
    Abstract: An inorganic compound semiconductor of the present disclosure contains yttrium, zinc, and nitrogen.
    Type: Application
    Filed: September 14, 2021
    Publication date: December 30, 2021
    Inventors: RYOSUKE KIKUCHI, TORU NAKAMURA, KOKI UENO, TAKAHIRO KURABUCHI, YASUSHI KANEKO, KAZUHITO HATO, FUMIYASU OBA, YU KUMAGAI
  • Publication number: 20200326351
    Abstract: Provided is a method whereby therapeutic effect in a critical limb ischemia patient after angiogenic therapy can be objectively evaluated with minimal patient burden. The problem addressed by the present invention is solved by a method for evaluating a therapeutic effect in a critical limb ischemia patient who has undergone angiogenic therapy. The evaluation method includes, a measurement step for measuring a VEGF-A165b concentration in a blood of the critical limb ischemia patient and an evaluation step for evaluating the therapeutic effect taking changes over time in the measured VEGF-A165b concentration as an indicator.
    Type: Application
    Filed: May 24, 2017
    Publication date: October 15, 2020
    Inventors: Ryosuke KIKUCHI, Kazuhisa KONDO, Toyoaki MUROHARA
  • Patent number: 10629764
    Abstract: The present disclosure provides a light energy conversion element in which a material having a bandgap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure comprises a light energy conversion layer containing BaBi2S4 having a hexagonal crystal structure.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: April 21, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Ryosuke Kikuchi, Toru Nakamura, Takahiro Kurabuchi, Kazuhito Hato, Fumiyasu Oba, Yu Kumagai
  • Publication number: 20190386165
    Abstract: The present disclosure provides a light energy conversion element in which a material having a bandgap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure comprises a light energy conversion layer containing BaBi2S4 having a hexagonal crystal structure.
    Type: Application
    Filed: July 18, 2019
    Publication date: December 19, 2019
    Inventors: RYOSUKE KIKUCHI, TORU NAKAMURA, TAKAHIRO KURABUCHI, KAZUHITO HATO, FUMIYASU OBA, YU KUMAGAI
  • Patent number: 10481169
    Abstract: Provided is a novel method and the like for diagnosing a lifestyle disease. The method for diagnosing a lifestyle disease provided by the present invention includes: collecting a biological sample from a subject; measuring the concentration of a fatty acid amide contained in the biological sample; determining whether the subject suffers from a lifestyle disease or a lifestyle disease has progressed when the measured value of the concentration of the fatty acid amide in the sample obtained from the subject is lower than a measurement result obtained from a healthy subject.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: November 19, 2019
    Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Koji Uchida, Takahiro Shibata, Kenji Ishikawa, Oi Lun Helena Li, Tadashi Matsushita, Ryosuke Kikuchi, Junzo Ukai
  • Publication number: 20190305154
    Abstract: The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZn2N2 and a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZn2N2.
    Type: Application
    Filed: December 18, 2018
    Publication date: October 3, 2019
    Inventors: KOKI UENO, RYOSUKE KIKUCHI, TORU NAKAMURA, TAKAHIRO KURABUCHI, YASUSHI KANEKO, KAZUHITO HATO, FUMIYASU OBA, YU KUMAGAI
  • Patent number: 10411144
    Abstract: A semiconductor electrode according to the present disclosure includes a conductive substrate; a semiconductor layer which is provided on the conductive substrate, and absorbs visible light; and a protection layer with which the semiconductor layer is coated, in which the protection layer is formed of an oxynitride, the visible light travels through the protection layer, and the protection layer has a thinner thickness than the semiconductor layer.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: September 10, 2019
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Hideaki Murase, Ryosuke Kikuchi
  • Publication number: 20190198170
    Abstract: Disclosed is a method comprising acquiring a value relating to VEGF-A of a subject, wherein the value is a measured value of total VEGF-A in a blood sample, or a value obtained by dividing a measured value of VEGF-A165b in the blood sample by a measured value of total VEGF-A in the blood sample (VEGF-A165b/total VEGF-A), and the value suggests prognosis of myocardial infarction of the subject or severity of coronary artery disease of the subject.
    Type: Application
    Filed: December 20, 2018
    Publication date: June 27, 2019
    Applicants: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, SYSMEX CORPORATION
    Inventors: Ryosuke KIKUCHI, Kazuhiro Harada, Yohei Shibata, Hideki Ishii, Toyoaki Murohara
  • Publication number: 20180358482
    Abstract: A semiconductor electrode according to the present disclosure includes a conductive substrate; a semiconductor layer which is provided on the conductive substrate, and absorbs visible light; and a protection layer with which the semiconductor layer is coated, in which the protection layer is formed of an oxynitride, the visible light travels through the protection layer, and the protection layer has a thinner thickness than the semiconductor layer.
    Type: Application
    Filed: May 15, 2018
    Publication date: December 13, 2018
    Inventors: HIDEAKI MURASE, RYOSUKE KIKUCHI