Abstract: A balance weight pressure-bonding device pressure-bonds, to a wheel inner circumferential surface, a balance weight which is to be attached to the inner circumferential surface. The device includes a pressing member having a pressing surface arranged to press the balance weight against the inner circumferential surface in a state in which the balance weight is sandwiched between the pressing surface and the inner circumferential surface, a pressing force sensor detecting a pressing force with which the pressing surface presses the balance weight during pressing of the balance weight by the pressing member, a drive unit driving the pressing member, and a controller controlling the drive unit. The controller drives the drive unit and causes the pressing surface to press the balance weight against the inner circumferential surface and pressure-bond the balance weight to the inner circumferential surface, based on detection of the pressing force by the pressing force sensor.

Abstract: A capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is disposed between the first electrode and the second electrode. The dielectric includes a compound having an inverted perovskite structure. The inverted perovskite structure of this compound has a portion in which a cation is present at each vertex of corner-sharing octahedra and an anion is present at a center of each of the corner-sharing octahedra.

Abstract: A capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is disposed between the first electrode and the second electrode. The dielectric includes an oxide having a composition represented by Hf1-x-ySixGayOz. This composition satisfies requirements 0.01?x, 0.05?y?0.11, and 0.09?x+y?0.15.

Abstract: A dielectric of the present disclosure includes an oxide containing hafnium, zirconium, and gallium. In the dielectric, a molar ratio Zr/(Hf+Zr) of a zirconium content to a sum of a hafnium content and the zirconium content is 0.2 or more and less than 1. Further, a molar ratio Ga/(Hf+Zr+Ga) of a gallium content to a sum of the hafnium content, the zirconium content, and the gallium content is more than 0 and less than 0.14.

Abstract: A capacitor includes a metallic tantalum, an electrical conductor, and a tantalum oxide film. The tantalum oxide film is disposed in contact with the metallic tantalum and between the metallic tantalum and the electrical conductor. The tantalum oxide film includes a first portion and a second portion. The first portion contains fluorine. The second portion is located closer to the metallic tantalum than the first portion in a thickness direction of the tantalum oxide film. In the tantalum oxide film, a fluorine concentration in the second portion is lower than a fluorine concentration in the first portion. A ratio d1/d0 of a thickness d1 of the first portion to a thickness d0 of the tantalum oxide film is more than 0.4 and 0.8 or less.

Abstract: A capacitor includes metallic tantalum and a dielectric layer. The dielectric layer covers the metallic tantalum and includes a tantalum oxide. The dielectric layer includes fluorine and phosphorus. The dielectric layer includes, for example, a first portion and a second portion. The first portion is a portion separated from the metallic tantalum in a thickness direction of the dielectric layer. The second portion is a portion in contact with the metallic tantalum in the thickness direction of the dielectric layer.

Abstract: A dielectric of the present disclosure includes a tantalum compound containing fluorine and oxygen and being amorphous, and is advantageous in terms of achieving a high dielectric constant.

Abstract: A capacitor includes metallic tantalum, a solid electrolyte, and a tantalum oxide film. The tantalum oxide film is disposed between the metallic tantalum and the solid electrolyte. A first portion includes fluorine. A second portion is in contact with the first portion, the second portion being closer to the solid electrolyte than the first portion in a thickness direction of the tantalum oxide film. A fluorine concentration in the second portion is lower than a fluorine concentration in the first portion.

Abstract: A dielectric contains an oxide containing hafnium and cerium. The molar ratio of the content of cerium to the sum of the content of hafnium and the content of cerium is greater than or equal to 0.031 and less than or equal to 0.052. The molar ratio of the content of oxygen to the sum of the content of hafnium and the content of cerium is greater than 0 and less than or equal to 1.50.

Abstract: A halide includes a crystal having a composition represented by ASn2X5. In the composition, A is a molecular cation containing at least one nitrogen atom and X is a halogen element.

Abstract: A capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is disposed between the first electrode and the second electrode. The dielectric includes a crystal having a composition represented by APb2X5, where A is a cation which is a molecular ion containing at least one nitrogen atom and X is a halogen element.

Abstract: A dielectric of the present disclosure includes a tantalum compound containing fluorine and oxygen and being amorphous, and is advantageous in terms of achieving a high dielectric constant.

Abstract: A dielectric of the present disclosure includes a composite oxide including at least two selected from the group consisting of Nb, Bi, and Ta, wherein the following requirement (I), (II), or (III) is satisfied: (I) the composite oxide includes Nb, Bi, and Ta; (II) the composite oxide includes Nb and Bi and is amorphous; and (III) the composite oxide includes Bi and Ta and is amorphous.

Abstract: A capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is disposed between the first electrode and the second electrode. The dielectric includes a compound having an inverted perovskite structure. The inverted perovskite structure of this compound has a portion in which a cation is present at each vertex of corner-sharing octahedra and an anion is present at a center of each of the corner-sharing octahedra.

Abstract: A capacitor includes a metallic tantalum, an electric conductor, and an oxidized tantalum film. The oxidized tantalum film is disposed between the metallic tantalum and the electric conductor, where the oxidized tantalum film is in contact with the metallic tantalum. The oxidized tantalum film includes a first portion containing fluorine, and a second portion. The second portion is located closer to the metallic tantalum than the first portion in a thickness direction of the oxidized tantalum film. And a fluorine concentration at the second portion is lower than a fluorine concentration at the first portion.

Abstract: A capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is disposed between the first electrode and the second electrode. The dielectric includes a halide and satisfies a requirement 1/2<r<2/3. In this requirement, r is a ratio of the number of cations to the number of anions in the halide included in the dielectric.

Abstract: A dielectric has a composition represented by Bi2xMgyTizOk. The composition satisfies requirements x?0.15, y?0.40, z?0.25, and x+y+z=1.0. In the composition, k is a value for maintaining electroneutrality.

Abstract: A capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is disposed between the first electrode and the second electrode. The dielectric includes an oxide having a composition represented by Hf1?x?ySixGayOz. This composition satisfies requirements 0.01?x, 0.05?y?0.11, and 0.09?x+y?0.15.

Abstract: A dielectric material 1a includes a metal oxide including: Zn; a rare-earth element; and Mn.

Abstract: A method for manufacturing a member of a capacitor according to the present disclosure includes forming a modified layer on a valve metal by a cathodic reaction, the modified layer including a metal other than the valve metal. In the manufacturing method, a requirement ?H/KH [V/nm]>?L/KL [V/nm] is satisfied, where ?H is a dielectric constant of an oxide of the metal, KH [nm/V] is a thickness of a first oxide film of the metal, in formation of the first oxide film by anodic oxidation of the metal, per 1 V of anode potential, EL is a dielectric constant of an oxide of the valve metal, and KL [nm/V] is a 10 thickness of a second oxide film including the oxide of the valve metal, in formation of the second oxide film by anodic oxidation, per 1 V of anode potential.