Abstract: A tubular body for a fixing member includes: a first layer having a thermal conductivity of 1.0 W/m·K or more; and a second layer containing a resin and particles of a solid material in which heat absorption/release associated with electronic phase transition occurs.

Abstract: A polymer material molded product includes a polymer material and a porous carbon material having an X-ray diffraction spectral characteristic shown in the following (1) or (2), (1): a peak derived from a (002) plane of carbon is observed, a half width of the peak derived from the (002) plane of carbon is 5° or more, and a half width of a peak derived from a (10) plane of carbon is 3.2° or less, and (2): the peak derived from the (002) plane of carbon is not observed, and the half width of the peak derived from the (10) plane of carbon is 3.2° or less.

Abstract: A polymer material molded product includes a polymer material and a porous carbon material having an X-ray diffraction spectral characteristic shown in the following (1) or (2), (1): a peak derived from a (002) plane of carbon is observed, a half width of the peak derived from the (002) plane of carbon is 5° or more, and a half width of a peak derived from a (10) plane of carbon is 3.2° or less, and (2): the peak derived from the (002) plane of carbon is not observed, and the half width of the peak derived from the (10) plane of carbon is 3.2° or less.

Abstract: In a method of manufacturing surface-emitting lasers, a substrate having a major surface including a plurality of areas each provided with a plurality of surface-emitting lasers is prepared. A first laser beam emitted when a direct-current voltage is applied to each of an n number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, n being an integer of 2 or greater. A second laser beam emitted when an alternating-current voltage is applied to each of an m number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, m being a natural number smaller than n. Whether the n number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the first laser beam. Whether the m number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the second laser beam.

Abstract: In a method of manufacturing surface-emitting lasers, a substrate having a major surface including a plurality of areas each provided with a plurality of surface-emitting lasers is prepared. A first laser beam emitted when a direct-current voltage is applied to each of an n number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, n being an integer of 2 or greater. A second laser beam emitted when an alternating-current voltage is applied to each of an m number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, m being a natural number smaller than n. Whether the n number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the first laser beam. Whether the m number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the second laser beam.

Abstract: A light-emitting module includes a substrate, a first surface-emitting laser mounted on the substrate, the first surface-emitting laser having a first engaging portion protruded outward at an end, and a second surface-emitting laser mounted on the substrate, the second surface-emitting laser having a second engaging portion recessed inward at an end. The first surface-emitting laser and the second surface-emitting laser are adjacent to each other. The first engaging portion and the second engaging portion are engaged with each other.

Abstract: A vertical cavity surface emitting laser according to an aspect of the present disclosure includes a substrate having a main surface including a III-V group compound semiconductor and a semiconductor structure having a post disposed on the main surface. The main surface has an off-angle greater than 2° with respect to a plane. The post includes an active layer and a current confinement layer that are arranged in a first direction intersecting the main surface. The current confinement layer includes an aperture portion and an insulation portion surrounding the aperture portion. The current confinement layer has a uniaxially symmetric shape or an asymmetric shape in a section perpendicular to the first direction.

Abstract: An array device manufacturing method includes the steps of forming a plurality of optical elements on a wafer; inspecting the plurality of optical elements; defining dicing lines on the basis of a result of the inspection such that an array device composed entirely of one or more non-defective ones of the plurality of optical elements is obtained, the one or more non-defective ones being determined to be non-defective in the inspection; and forming the array device by dicing the wafer along the dicing lines.

Abstract: A measurement method of a surface-emitting laser includes a step of causing a surface-emitting laser to emit light and a step of positioning an optical axis of an optical system on each of a plurality of positions of the surface-emitting laser and measuring a spectrum at each of the plurality of positions.

Abstract: A surface-emitting laser measuring method includes the steps of causing at least one surface-emitting laser to emit light; and measuring a light intensity and a spectrum of the at least one surface-emitting laser by splitting the light emitted from the at least one surface-emitting laser in the step of causing the at least one surface-emitting laser to emit light and causing one split beam to be incident on a light-intensity measuring unit while causing another split beam to be incident on a spectrum measuring unit.

Abstract: A light-emitting module includes a substrate, a first surface-emitting laser mounted on the substrate, the first surface-emitting laser having a first engaging portion protruded outward at an end, and a second surface-emitting laser mounted on the substrate, the second surface-emitting laser having a second engaging portion recessed inward at an end. The first surface-emitting laser and the second surface-emitting laser are adjacent to each other. The first engaging portion and the second engaging portion are engaged with each other.

Abstract: Electrophoresis device including: a first flow passage extending in a first direction and through which a sample and a buffer solution flow; a sample collecting part provided at an end portion of the first flow passage and configured to collect the sample; electrodes disposed at both sides of the first flow passage in a second direction perpendicular to the first direction and configured to apply a voltage to the first flow passage in the second direction; second flow passages communicating with both sides of the first flow passage in the second direction, configured to accommodate the electrodes, and through which a second buffer solution flows; and partition walls fixed to communicating portions between the first and second flow passages with a predetermined bonding strength and configured to block movement of substances between the first and second flow passages. The partition walls are formed of a gel material having ion permeability.

Abstract: A method of fabricating a surface-emitting laser includes the steps of fabricating a substrate product including device sections, a pad electrode, and a conductor, each of the device sections including a surface-emitting laser having an electrode, the conductor connecting the pad electrode to the electrode across a boundary of the device sections; attaching a connection device to the substrate product, the connection device including a probe device having a probe and a probe support base having an opening; performing a burn-in test of the surface-emitting lasers by applying electric power to the pad electrode through the probe at a high temperature; and after the burn-in test, separating the substrate product into semiconductor chips. The burn-in test includes a step of monitoring light emitted by the surface-emitting laser through the opening during the burn-in test, and a step of selecting the surface-emitting lasers based on a monitoring result.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of ?5 V is applied to the gate electrode for 100 hours at a temperature of 175° C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.

Abstract: A surface-emitting laser includes a substrate having a principal surface; an active layer provided on the principal surface of the substrate; a first stacked layer provided on the active layer, the first stacked layer serving as a first distributed Bragg reflector; a first contact layer disposed between the active layer and the first stacked layer; a post provided on the principal surface of the substrate, the post including the active layer, the first contact layer, and the first stacked layer, the post having an upper surface, a side surface inclined relative to the substrate principle surface, and a lower end; and a first electrode that contacts the first contact layer at the side surface of the post.

Abstract: A method of fabricating a surface-emitting laser includes the steps of fabricating a substrate product including device sections, a pad electrode, and a conductor, each of the device sections including a surface-emitting laser having an electrode, the conductor connecting the pad electrode to the electrode across a boundary of the device sections; attaching a connection device to the substrate product, the connection device including a probe device having a probe and a probe support base having an opening; performing a burn-in test of the surface-emitting lasers by applying electric power to the pad electrode through the probe at a high temperature; and after the burn-in test, separating the substrate product into semiconductor chips. The burn-in test includes a step of monitoring light emitted by the surface-emitting laser through the opening during the burn-in test, and a step of selecting the surface-emitting lasers based on a monitoring result.

Abstract: A silicon carbide semiconductor substrate includes: a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; and an epitaxial layer formed on the main surface. The silicon carbide semiconductor substrate has an amount of warpage of not less than ?100 ?m and not more than 100 ?m when a substrate temperature is a room temperature and has an amount of warpage of not less than ?1.5 mm and not more than 1.5 mm when the substrate temperature is 400° C.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of ?5 V is applied to the gate electrode for 100 hours at a temperature of 175° C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.

Abstract: A silicon carbide semiconductor substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface has a maximum diameter of more than 100 mm, and the silicon carbide semiconductor substrate has a thickness of not more than 700 ?m. A dislocation density is not more than 500/mm2 at an arbitrary region having an area of 1 mm2 in a region within 5 mm from an outer circumferential end portion of the first main surface toward a center of the first main surface. Accordingly, there is provided a silicon carbide semiconductor substrate allowing for suppression of generation of cracks.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of ?5 V is applied to the gate electrode for 100 hours at a temperature of 175° C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.