Patents by Inventor Ryosuke KYOJIMA

Ryosuke KYOJIMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Liquid discharge head, liquid discharge device, and liquid discharge apparatus
    Patent number: 11628670
    Abstract: A liquid discharge head includes a nozzle plate, an individual liquid chamber, and an actuator. The nozzle plate has a nozzle on a liquid discharge face and a through hole communicating with the nozzle and penetrating the nozzle plate. The nozzle plate includes a substrate including a first silicon layer on a side of the liquid discharge face, a second silicon layer, a first silicon oxide film layer, and a second silicon oxide layer on a surface of the second silicon layer different from a surface of the second silicon layer in contact with the first silicon oxide film layer. A thickness of the first silicon layer is smaller than a thickness of the second silicon layer. A portion of the through hole penetrating the first silicon layer has a smaller diameter than a portion of the through hole penetrating the second silicon layer.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: April 18, 2023
    Assignee: RICOH COMPANY, LTD.
    Inventor: Ryosuke Kyojima
  • LIQUID DISCHARGE HEAD, LIQUID DISCHARGE DEVICE, AND LIQUID DISCHARGE APPARATUS
    Publication number: 20220080729
    Abstract: A liquid discharge head includes a nozzle plate, an individual liquid chamber, and an actuator. The nozzle plate has a nozzle on a liquid discharge face and a through hole communicating with the nozzle and penetrating the nozzle plate. The nozzle plate includes a substrate including a first silicon layer on a side of the liquid discharge face, a second silicon layer, a first silicon oxide film layer, and a second silicon oxide layer on a surface of the second silicon layer different from a surface of the second silicon layer in contact with the first silicon oxide film layer. A thickness of the first silicon layer is smaller than a thickness of the second silicon layer. A portion of the through hole penetrating the first silicon layer has a smaller diameter than a portion of the through hole penetrating the second silicon layer.
    Type: Application
    Filed: September 13, 2021
    Publication date: March 17, 2022
    Inventor: Ryosuke KYOJIMA