Abstract: An information processing apparatus includes circuitry that controls mounting or unmounting of a specified storage area to an operating system on the information processing apparatus and a memory that stores a first mount status indicating whether or not mounting or unmounting operation is performed to the information processing apparatus and a second mount status indicating whether or not the specified storage area is mounted. The circuitry presents the specified storage area as an available mounted storage area to a user if the second mount status indicates that the specified storage area is mounted, and does not present the specified storage area as the available storage area if the second mount status indicates that the storage area is not mounted.

Abstract: Provided are: an Mg—Si system thermoelectric conversion material which exhibits stably high thermoelectric conversion performance; a sintered body for thermoelectric conversion, which uses this Mg—Si system thermoelectric conversion material; a thermoelectric conversion element having excellent durability; and a thermoelectric conversion module. A method for producing an Mg—Si system thermoelectric conversion material according to the present invention comprises a step for heating and melting a starting material composition that contains Mg, Si, Sb and Zn. It is preferable that the contents of Sb and Zn in the starting material composition are respectively 0.1-3.0 at % in terms of atomic weight ratio.

Abstract: Manufacturing method of a copper alloy sheet including melting and casting a raw material of a copper alloy having a composition containing 1.0 mass % to 3.5 mass % Ni, 0.5 mass % to 2.0 mass % Co, and 0.3 mass % to 1.5 mass % Si with a balance being composed of Cu and an unavoidable impurity. The method includes the steps of first cold rolling, intermediate annealing, second cold rolling, a solution heat treatment and aging. The solution heat treatment includes: heating at 800° C. to 1020° C.; first quenching to 500° C. to 800° C.; maintaining the 500° C. to 800° C. temperature for 10 seconds to 600 seconds; and second quenching to 300° C. or lower.

Abstract: An information processing apparatus includes circuitry that controls mounting or unmounting of a specified storage area to an operating system on the information processing apparatus and a memory that stores a first mount status indicating whether or not mounting or unmounting operation is performed to the information processing apparatus and a second mount status indicating whether or not the specified storage area is mounted. The circuitry presents the specified storage area as an available mounted storage area to a user if the second mount status indicates that the specified storage area is mounted, and does not present the specified storage area as the available storage area if the second mount status indicates that the storage area is not mounted.

Abstract: Provided are: an Mg—Si system thermoelectric conversion material which exhibits stably high thermoelectric conversion performance; a sintered body for thermoelectric conversion, which uses this Mg—Si system thermoelectric conversion material; a thermoelectric conversion element having excellent durability; and a thermoelectric conversion module. A method for producing an Mg—Si system thermoelectric conversion material according to the present invention comprises a step for heating and melting a starting material composition that contains Mg, Si, Sb and Zn. It is preferable that the contents of Sb and Zn in the starting material composition are respectively 0.1-3.0 at % in terms of atomic weight ratio.

Abstract: There is provided a copper alloy sheet including 1.0 to 3.5 mass % Ni, 0.5 to 2.0 mass % Co, and 0.3 to 1.5 mass % Si, a Co/Ni mass ratio being 0.15 to 1.5, an (Ni+Co)/Si mass ratio being 4 to 7, and a balance being composed of Cu and an unavoidable impurity, wherein in observation results of a crystal grain boundary property and crystal orientation by EBSP measurement, a density of twin boundaries among all crystal grain boundaries is 40% or more and an area ratio of crystal grains with Cube orientation is 20% or more, on a rolled surface.

Abstract: Manufacturing method of a copper alloy sheet including melting and casting a raw material of a copper alloy having a composition containing 1.0 mass % to 3.5 mass % Ni, 0.5 mass % to 2.0 mass % Co, and 0.3 mass % to 1.5 mass % Si with a balance being composed of Cu and an unavoidable impurity. The method includes the steps of first cold rolling, intermediate annealing, second cold rolling, a solution heat treatment and aging. The solution heat treatment includes: heating at 800° C. to 1020° C.; first quenching to 500° C. to 800° C.; maintaining the 500° C. to 800° C. temperature for 10 seconds to 600 seconds; and second quenching to 300° C. or lower.

Abstract: There is provided a copper alloy sheet including 1.0 to 3.5 mass % Ni, 0.5 to 2.0 mass % Co, and 0.3 to 1.5 mass % Si, a Co/Ni mass ratio being 0.15 to 1.5, an (Ni+Co)/Si mass ratio being 4 to 7, and a balance being composed of Cu and an unavoidable impurity, wherein in observation results of a crystal grain boundary property and crystal orientation by EBSP measurement, a density of twin boundaries among all crystal grain boundaries is 40% or more and an area ratio of crystal grains with Cube orientation is 20% or more, on a rolled surface.