Abstract: A non-volatile semiconductor memory device that can reduce power consumption includes plural memory banks containing nonvolatile plural memory cells. A common data bus is shared by plural memory banks and transmits the data of the memory cells. The plural switches are provided respectively between the electric source and plural memory banks. A controller controls the plural switches. The controller, in the data reading-out action or the data writing-in action, makes at least one of the switches corresponding to at least one of the memory banks accessible in a conduction state, and other switches in a non-conduction state.

Abstract: A semiconductor storage device according to the present embodiment includes local word lines and bit lines intersecting the local word lines. Each memory segment includes nonvolatile memory cells. Each memory segment corresponds to a plurality of the local word lines. A sense amplifier corresponds to a plurality of the bit lines. A global word line corresponds to a plurality of the local word lines, and is commonly driven in the memory segments. A decoder is connected between the global word line and the local word lines corresponding to the global word line, and selectively drives a certain local word line from the local word lines. A segment controller is provided in each memory segment, and selects one of the memory segments to be driven. An input/output part outputs read data from the memory segments or receives write data to the memory segments.

Abstract: A non-volatile semiconductor memory device that can reduce power consumption includes plural memory banks containing nonvolatile plural memory cells. A common data bus is shared by plural memory banks and transmits the data of the memory cells. The plural switches are provided respectively between the electric source and plural memory banks. A controller controls the plural switches. The controller, in the data reading-out action or the data writing-in action, makes at least one of the switches corresponding to at least one of the memory banks accessible in a conduction state, and other switches in a non-conduction state.

Abstract: A semiconductor storage device according to the present embodiment includes local word lines and bit lines intersecting the local word lines. Each memory segment includes nonvolatile memory cells. Each memory segment corresponds to a plurality of the local word lines. A sense amplifier corresponds to a plurality of the bit lines. A global word line corresponds to a plurality of the local word lines, and is commonly driven in the memory segments. A decoder is connected between the global word line and the local word lines corresponding to the global word line, and selectively drives a certain local word line from the local word lines. A segment controller is provided in each memory segment, and selects one of the memory segments to be driven. An input/output part outputs read data from the memory segments or receives write data to the memory segments.