Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: There is provided a technique that includes (a) supplying a precursor gas and an inert gas to a substrate in a process chamber, (b) removing the precursor gas remaining in the process chamber by supplying the inert gas to the substrate in a state where the supply of the precursor gas is stopped, (c) supplying a reaction gas and the inert gas to the substrate, and (d) removing the reaction gas remaining in the process chamber by supplying the inert gas to the substrate in a state where the supply of the reaction gas is stopped, wherein (d) includes a timing at which a flow rate of the inert gas becomes lower than a flow rate of the inert gas supplied in (c).

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: A technique capable of adjusting a thickness balance of a film between substrates stacked in a process chamber of a substrate processing apparatus, includes a method of manufacturing a semiconductor device, including: (a) supplying source gas to substrates through a first nozzle vertically disposed along a stacking direction of the substrates in a process chamber where the substrates are stacked and accommodated; and (b) supplying reactive gas to the substrates through a second nozzle provided with opening portions and vertically disposed along the stacking direction of the substrates in the process chamber while adjusting a partial pressure balance of the reactive gas in the stacking direction of the substrates to a desired state along the stacking direction of the substrates, wherein an opening area of each of the opening portions increases along a direction from an upstream side to a downstream side of the second nozzle.

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.