Abstract: A roots pump includes a housing, a rotor chamber, a pair of rotary shafts, and a pair of rotors. The rotor chamber includes a rotor chamber peripheral surface facing a pair of distal end portions of each of the rotors. Each of the pair of the distal end portions includes: a pair of rotor peripheral surfaces facing the rotor chamber peripheral surface with a first radial clearance; and a distal end peripheral surface that is formed between the pair of the rotor peripheral surfaces in the rotational direction and faces the rotor chamber peripheral surface with a second radial clearance greater than the first radial clearance. A width of the rotor chamber peripheral surface facing the distal end peripheral surface in the rotational direction is greater than a sum of a pair of predetermined widths of the rotor chamber peripheral surface facing the pair of the rotor peripheral surfaces.

Abstract: There are provided a sensor data collection device, a sensor data collection system, and a method of collecting sensor data capable of reducing a drain of a battery due to standby power. The sensor data collection device includes a power supply, a power supply control circuit configured to control the power supply, a sensor configured to perform sensing to thereby obtain data, a memory configured to store the data obtained by the sensor, and a control circuit configured to control the power supply control circuit, the sensor, and the memory.

Abstract: A stator for a rotating electric machine includes a stator core and a stator coil. The stator core is formed of a band-shaped steel sheet that is helically bent and laminated. The stator core has slots each opening at an inner periphery of the stator core and spaced from one another in a circumferential direction. The stator coil is formed of electrical conductor segments that are inserted in the slots of the stator core and connected with one another. The band-shaped steel sheet has slits each of which is formed, at a position corresponding to one of the slots, to be open to the corresponding slot. Each of the electrical conductor segments is substantially U-shaped and has a pair of leg portions respectively inserted in corresponding two of the slots of the stator core; the corresponding two slots are circumferentially apart from each other by two or more slot-pitches.

Abstract: The present intraoral sensing apparatus is configured to be installed in an oral cavity, and is provided with an electronic device equipped with electronic components mounted on a circuit board; a first dental resin material which completely covers the electronic device; a second dental resin material which completely covers the first dental resin material; and an intraoral instrument having a first recess in which the electronic device covered with the first dental resin material and the second dental resin material is accommodated.

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: There is provided a technique that includes (a) supplying a precursor gas and an inert gas to a substrate in a process chamber, (b) removing the precursor gas remaining in the process chamber by supplying the inert gas to the substrate in a state where the supply of the precursor gas is stopped, (c) supplying a reaction gas and the inert gas to the substrate, and (d) removing the reaction gas remaining in the process chamber by supplying the inert gas to the substrate in a state where the supply of the reaction gas is stopped, wherein (d) includes a timing at which a flow rate of the inert gas becomes lower than a flow rate of the inert gas supplied in (c).

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Abstract: A technique capable of adjusting a thickness balance of a film between substrates stacked in a process chamber of a substrate processing apparatus, includes a method of manufacturing a semiconductor device, including: (a) supplying source gas to substrates through a first nozzle vertically disposed along a stacking direction of the substrates in a process chamber where the substrates are stacked and accommodated; and (b) supplying reactive gas to the substrates through a second nozzle provided with opening portions and vertically disposed along the stacking direction of the substrates in the process chamber while adjusting a partial pressure balance of the reactive gas in the stacking direction of the substrates to a desired state along the stacking direction of the substrates, wherein an opening area of each of the opening portions increases along a direction from an upstream side to a downstream side of the second nozzle.

Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.