Abstract: A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, wherein a ceramic substrate and a copper plate are bonded by a braze material containing Ag and Cu, at least one active metal component selected from Ti and Zr, and at least one element selected from among In, Zn, Cd, and Sn, wherein a braze material layer, after bonding, has a continuity ratio of 80% or higher and a Vickers hardness of 60 to 85 Hv.

Abstract: A bonded substrate includes a substrate, a metal plate forming a stacked state with the substrate, and bonding member. The metal plate has a first surface on the substrate side and a second surface opposite; wherein an edge of the first surface is located outside an edge of the second. The bonding member is disposed between the substrate and plate to bond the plate and substrate, and protrudes from the edge over an entire periphery of the plate. In cut surfaces obtained by cutting the bonded substrate, a peripheral surface length (A) from a portion corresponding to a peripheral edge of the first surface to a corresponding portion of the second, protrusion length of the bonding member, and thickness (C) of the metal plate satisfy first and second expressions. 0.032?B/(A+B)?0.400??(First Expression) 0.5(mm)?C?2.

Abstract: A ceramic circuit substrate is suitable for silver nanoparticle bonding of semiconductor elements and has excellent close adhesiveness with a power module sealing resin. A ceramic circuit substrate has a copper plate bonded, by a braze material, to both main surfaces of a ceramic substrate including aluminum nitride or silicon nitride, the copper plate of at least one of the main surfaces being subjected to silver plating, wherein: the copper plate side surfaces are not subjected to silver plating; the thickness of the silver plating is 0.1 ?m to 1.5 ?m; and the arithmetic mean roughness Ra of the surface roughness of the circuit substrate after silver plating is 0.1 ?m to 1.5 ?m.

Abstract: A bonded substrate includes a substrate, a metal plate forming a stacked state with the substrate, and bonding member. The metal plate has a first surface on the substrate side and a second surface opposite; wherein an edge of the first surface is located outside an edge of the second. The bonding member is disposed between the substrate and plate to bond the plate and substrate, and protrudes from the edge over an entire periphery of the plate. In cut surfaces obtained by cutting the bonded substrate, a peripheral surface length (A) from a portion corresponding to a peripheral edge of the first surface to a corresponding portion of the second, protrusion length of the bonding member, and thickness (C) of the metal plate satisfy first and second expressions. 0.032?B/(A+B)?0.400??(First Expression) 0.5 (mm)?C?2.

Abstract: A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, wherein a ceramic substrate and a copper plate are bonded by a braze material containing Ag and Cu, at least one active metal component selected from Ti and Zr, and at least one element selected from among In, Zn, Cd, and Sn, wherein a braze material layer, after bonding, has a continuity ratio of 80% or higher and a Vickers hardness of 60 to 85 Hv.

Abstract: A ceramic circuit substrate is suitable for silver nanoparticle bonding of semiconductor elements and has excellent close adhesiveness with a power module sealing resin. A ceramic circuit substrate has a copper plate bonded, by a braze material, to both main surfaces of a ceramic substrate including aluminum nitride or silicon nitride, the copper plate of at least one of the main surfaces being subjected to silver plating, wherein: the copper plate side surfaces are not subjected to silver plating; the thickness of the silver plating is 0.1 ?m to 1.5 ?m; and the arithmetic mean roughness Ra of the surface roughness of the circuit substrate after silver plating is 0.1 ?m to 1.5 ?m.

Abstract: It is an object of the present invention to obtain a ceramic circuit substrate having high bonding strength, excellent heat cycle resistance, enhanced reliability of operation as an electronic device, and excellent heat dissipation properties. The present invention provides a ceramic circuit substrate in which metal plates, particularly copper plates, and both main surfaces of a ceramic substrate are bonded vial silver-copper brazing material layers. The silver-copper brazing material layers are formed from a silver-copper brazing material including i) 0.3-7.5 parts by mass of carbon fibers, and ii) 1.0-9.0 parts by mass of at least one active metal selected from titanium, zirconium, hafnium, niobium, tantalum, vanadium, and tin; with respect to iii) a total of 100 parts by mass of a) 75-98 parts by mass of silver powder and b) 2-25 parts by mass of copper powder. The carbon fibers having an average length of 15-400 ?m, an average diameter of 5-25 ?m and an average aspect ratio of 3-28.

Abstract: [Problem] To obtain a ceramic circuit board having superior crack-resistance with respect to ultrasonic bonding. [Solution] The abovementioned problem is solved by a ceramic circuit board characterized in that a metal circuit board is bonded to one surface of a ceramic substrate and a metal heat radiation plate is bonded to the other surface of the ceramic substrate, wherein the crystal grain size in the metal circuit board is at least 20 ?m and at most 70 ?m. This ceramic circuit board can be manufactured by arranging the metal circuit board on one surface of the ceramic substrate and arranging the metal heat radiation plate on the other surface of the ceramic substrate, and bonding in a vacuum of at most 1×10?3 Pa, at a bonding temperature of at least 780° C. and at most 850° C., for a retention time of at least 10 minutes and at most 60 minutes.

Abstract: The present invention provides a boron diffusion layer forming method capable of sufficiently oxidizing a boron silicide layer formed on a silicon substrate to remove it and obtaining a high-quality boron silicate glass layer. The present invention is a boron diffusion layer forming method of forming a boron diffusion layer on a silicon substrate by a boron diffusion process, the process including a first step of thermally diffusing boron on the silicon substrate and a second step of oxidizing a boron silicide layer formed on the silicon substrate at the first step, wherein the second step has a state at a temperature of 900° C. or higher and a treatment temperature at the first step or lower, for 15 minutes or more.

Abstract: [Problem] To obtain a ceramic circuit board having superior crack-resistance with respect to ultrasonic bonding. [Solution] The abovementioned problem is solved by a ceramic circuit board characterized in that a metal circuit board is bonded to one surface of a ceramic substrate and a metal heat radiation plate is bonded to the other surface of the ceramic substrate, wherein the crystal grain size in the metal circuit board is at least 20 ?m and at most 70 ?m. This ceramic circuit board can be manufactured by arranging the metal circuit board on one surface of the ceramic substrate and arranging the metal heat radiation plate on the other surface of the ceramic substrate, and bonding in a vacuum of at most 1×10?3 Pa, at a bonding temperature of at least 780° C. and at most 850° C., for a retention time of at least 10 minutes and at most 60 minutes.

Abstract: [Problem] To obtain a ceramic circuit substrate having high bonding strength, excellent heat cycle resistance, enhanced reliability of operation as an electronic device, and excellent heat dissipation properties. [Solution] A ceramic circuit substrate in which metal plates and both main surfaces of a ceramic substrate are bonded via silver-copper brazing material layers, the ceramic Cit quit substrate characterized in that the silver-copper brazing material layers are formed from a silver-copper brazing material including 0.3-7.5 parts by mass of carbon fibers and 1.0-9.0 parts by mass of at least one active metal selected from titanium, zirconium, hafnium, niobium, tantalum, vanadium, and tin with respect to 75-98 parts by mass of silver powder and 2-25 parts by mass of copper powder totaling 100 part by mass, with the carbon fibers having an average length of 15-400 ?m, an average diameter of 5-25 ?m and an average aspect ratio of 3-28.

Abstract: The present invention provides a boron diffusion layer forming method capable of sufficiently oxidizing a boron silicide layer formed on a silicon substrate to remove it and obtaining a high-quality boron silicate glass layer. The present invention is a boron diffusion layer forming method of forming a boron diffusion layer on a silicon substrate by a boron diffusion process, the process including a first step of thermally diffusing boron on the silicon substrate and a second step of oxidizing a boron silicide layer formed on the silicon substrate at the first step, wherein the second step has a state at a temperature of 900° C. or higher and a treatment temperature at the first step or lower, for 15 minutes or more.