Abstract: A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.

Abstract: A semiconductor laser element includes: a substrate; a first-conductivity-type semiconductor layer formed on the substrate; a light-emitting layer formed on the first-conductivity-type semiconductor layer; a second-conductivity-type semiconductor layer that is formed on the light-emitting layer and includes a protrusion in a strip form; a transparent conductive layer formed on the protrusion of the second-conductivity-type semiconductor layer; a protective layer that is formed on the transparent conductive layer and has conductivity; a dielectric film that covers side surfaces of the protrusion of the second-conductivity-type semiconductor layer, side surfaces of the transparent conductive layer, and side surfaces of the protective layer; and an upper electrode formed on the protective layer. The whole of an upper surface of the transparent conductive layer is covered by the protective layer, and part of an upper surface of the protective layer is covered by the dielectric film.

Abstract: A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.