Abstract: A polishing composition according to the present invention contains zirconia particles, a selectivity improver for improving a ratio of a polishing speed for an organic material (b) to a polishing speed for a material (a) having a metal-nitrogen bond, and a dispersing medium, wherein in a particle size distribution of the zirconia particles obtained by a laser diffraction/scattering method, a diameter (D50) of the particles when a cumulative volume of the particles from a fine particle side reaches 50% of a total volume of the particles is 5 nm or more and 150 nm or less, and a pH of the polishing composition is less than 7.

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.

Abstract: Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.

Abstract: The present disclosure provides a means capable of reducing scratches on a surface of a polished object to be polished (particularly, silicon oxide). The present disclosure is a polishing composition containing abrasive grains, an inorganic salt, an organic onium salt, in which the organic onium salt contains at least one of a tetraalkylammonium salt represented by Chemical Formula 1 below or a tetraalkylphosphonium salt represented by Chemical Formula 2 below, and a zeta potential of the abrasive grains in the polishing composition is negative: in the Chemical Formula 1 and the Chemical Formula 2, R1 to R8 each independently represent an unsubstituted alkyl group having 1 or more and 4 or less carbon atoms, and A? and X? each independently represent a monovalent anion.

Abstract: The purpose of the present invention is to provide a novel method for producing a polishing composition and a novel method for producing a rinse composition, which enables reducing coarse particles and enables suppressing generation of defects. The method for producing a polishing composition includes preparing a first liquid by providing an abrasive grain dispersion containing abrasive grains and water, and filtering the abrasive grain dispersion; preparing a second liquid by providing at least one chemical component-containing aqueous solution containing a chemical component and water, and filtering the aqueous solution when one chemical component-containing aqueous solution is provided, or filtering a mixture X containing at least one chemical component-containing aqueous solution; and mixing the first liquid and the second liquid to prepare a third liquid, and filtering the third liquid.

Abstract: The present disclosure is to provide means capable of improving a polishing removal rate of an object to be polished (particularly, silicon oxide) and reducing scratches on a surface of a polished object to be polished (particularly, silicon oxide). The present disclosure provides a polishing composition containing abrasive grains in which an average primary particle size is 1 nm or more and 150 nm or less, and a dispersing medium, in which an aggregation rate of the abrasive grains is 40% or more and less than 75%.

Abstract: There are provided a polishing composition capable of increasing the polishing removal rate of silicon nitride, a polishing composition production method, a polishing method, and a semiconductor substrate production method. The polishing composition contains abrasives having a zeta potential of ?5 mV or less and a cationic surfactant.

Abstract: The present invention provides a means capable of polishing a Low-k material and silicon nitride at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention provides a means capable of making a selection ratio of a polishing removal rate of silicon nitride to a polishing removal rate of silicon oxide appropriate while polishing silicon oxide and silicon nitride at a high polishing removal rate and capable of reducing defects on a silicon oxide surface after polishing. The present invention is a polishing composition containing abrasive grains and an alkylamine compound having at least one linear or branched alkyl group having 2 or more and 15 or less carbon atoms, in which a pH is less than 7, and a zeta potential of the abrasive grains in the polishing composition is negative.

Abstract: To provide a polishing composition that can polish silicon nitride film at a high polishing removal rate and suppress the polishing removal rate for polycrystalline silicon film. A polishing composition containing abrasive grains having a negative zeta potential in the polishing composition, and a polyalkylene oxide compound represented by formula (1); and having a pH of less than 7.

Abstract: The present invention provides a means capable of polishing a Low-k material and silicon nitride each at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention is a polishing composition containing abrasive grains and a quaternary phosphonium salt, in which a pH is less than 7.0, and a zeta potential of the abrasive grains in the polishing composition is ?10 mV or less.

Abstract: An object of the present invention is to provide means that can polish both silicon nitride and silicon oxide at a high polishing removal rate. The present invention provides a polishing composition including abrasive grains and an acidic compound. The abrasive grains are inorganic particles having an organic acid immobilized on a surface thereof. In a particle size distribution of the abrasive grains measured by a dynamic light scattering method, D90/D10 is 2.2 or more and D50 is 70 nm or more, where D10 is a particle diameter when a cumulative particle mass from a fine particle side reaches 10% of the total particle mass, D50 is a particle diameter when the cumulative particle mass from the fine particle side reaches 50% of the total particle mass, and D90 is a particle diameter when the cumulative particle mass from the fine particle side reaches 90% of the total particle mass.

Abstract: A polishing composition capable of increasing a polishing selectivity ratio of SiOC to silicon nitride, a production method of the polishing composition, a polishing method, and a manufacturing method of a semiconductor substrate are provided. The polishing composition contains abrasives having a zeta potential of ?5 mV or less, a cationic surfactant, a phosphonic acid-based chelating agent, and a cationic compound having a molecular weight of 300 or less.

Abstract: A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

Abstract: There is provided a method of producing anionically modified colloidal silica capable of polishing a silicon nitride film at a high speed and suppressing a polishing speed of a silicon oxide film. A method of producing anionically modified colloidal silica includes ion exchanging raw colloidal silica using an ion exchange resin (ion exchange step); and anionically modifying ion-exchanged raw colloidal silica to obtain anionically modified colloidal silica (modification step).

Abstract: Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.

Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device. There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.

Abstract: A polishing composition according to the present invention contains zirconia particles, a selectivity improver for improving a ratio of a polishing speed for an organic material (b) to a polishing speed for a material (a) having a metal-nitrogen bond, and a dispersing medium, wherein in a particle size distribution of the zirconia particles obtained by a laser diffraction/scattering method, a diameter (D50) of the particles when a cumulative volume of the particles from a fine particle side reaches 50% of a total volume of the particles is 5 nm or more and 150 nm or less, and a pH of the polishing composition is less than 7.

Abstract: A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

Abstract: Provided is a polishing composition which is capable of polishing a polycrystalline silicon film and a silicon oxide film at high polishing speeds, and has a high selection ratio of the polishing speed of a polycrystalline silicon film. The polishing composition contains abrasive grains, an alkaline compound, and a dispersing medium, wherein the abrasive grains contain silica particles having a silanol group density of higher than 0 group/nm2 and 4 groups/nm2 or less, electrical conductivity is 0.5 mS/cm or more and 10 mS/cm or less, and pH is 10 or more and 12 or less.