Abstract: A polishing composition according to the present invention contains zirconia particles, a selectivity improver for improving a ratio of a polishing speed for an organic material (b) to a polishing speed for a material (a) having a metal-nitrogen bond, and a dispersing medium, wherein in a particle size distribution of the zirconia particles obtained by a laser diffraction/scattering method, a diameter (D50) of the particles when a cumulative volume of the particles from a fine particle side reaches 50% of a total volume of the particles is 5 nm or more and 150 nm or less, and a pH of the polishing composition is less than 7.

Abstract: A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

Abstract: Provided is a polishing composition capable of polishing an object to be polished containing polycrystalline silicon doped with an n-type impurity at a high polishing speed. The polishing composition contains abrasive grains and a dispersing medium, wherein: the abrasive grains contain first silica particles having a silanol group density of higher than 0 group/nm2 and 4 groups/nm2 or less and second silica particles having a silanol group density of higher than 4 groups/nm2 and 12 groups/nm2 or less; and the pH is higher than 6.

Abstract: Provided is a polishing composition which is capable of polishing a polycrystalline silicon film and a silicon oxide film at high polishing speeds, and has a high selection ratio of the polishing speed of a polycrystalline silicon film. The polishing composition contains abrasive grains, an alkaline compound, and a dispersing medium, wherein the abrasive grains contain silica particles having a silanol group density of higher than 0 group/nm2 and 4 groups/nm2 or less, electrical conductivity is 0.5 mS/cm or more and 10 mS/cm or less, and pH is 10 or more and 12 or less.

Abstract: There is provided a method of producing anionically modified colloidal silica capable of polishing a silicon nitride film at a high speed and suppressing a polishing speed of a silicon oxide film. A method of producing anionically modified colloidal silica includes ion exchanging raw colloidal silica using an ion exchange resin (ion exchange step); and anionically modifying ion-exchanged raw colloidal silica to obtain anionically modified colloidal silica (modification step).

Abstract: A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

Abstract: A polishing composition according to the present invention contains colloidal silica and a quaternary ammonium compound represented by Formula (1), wherein a pH is less than 4.0, and a zeta potential of the colloidal silica is ?60 mV or higher and ?35 mV or lower.

Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device. There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.