Abstract: The method for manufacturing a solar cell includes: forming a first semiconductor layer of first conductivity type on a surface of a semiconductor substrate; forming a lift-off layer containing a silicon-based material on the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of second conductivity type on a surface having the lift-off layer and first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution.

Abstract: A method for manufacturing a stacked photoelectric conversion device includes forming an intermediate transparent conductive layer on a light-receiving surface of a crystalline silicon-based photoelectric conversion unit including a crystalline silicon substrate, and forming a thin-film photoelectric conversion unit on the intermediate transparent conductive layer. The stacked photoelectric conversion device includes the crystalline silicon-based photoelectric conversion unit, the intermediate transparent conductive layer, and the thin-film photoelectric conversion unit. The light-receiving surface of the crystalline silicon-based photoelectric conversion unit has a textured surface including a plurality of projections and recesses. The textured surface has an average height of 0.5 ?m or more. The intermediate transparent conductive layer fills the recesses of the textured surface and covers the tops of the projections of the textured surface.

Abstract: A method for manufacturing a solar cell includes: forming a first semiconductor layer of a first conductivity type on and over one of two major surfaces facing each other on a crystal substrate; forming a lift-off layer on and over the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of a second conductivity type on and over the major surface having the lift-off layer and the first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution; and washing the crystal substrate by using a rinsing liquid.

Abstract: The method for manufacturing a solar cell includes: forming a first semiconductor layer of first conductivity type on a surface of a semiconductor substrate; forming a lift-off layer containing a silicon-based material on the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of second conductivity type on a surface having the lift-off layer and first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution.

Abstract: A tandem-type photoelectric conversion device includes, arranged in the following order from a light-incident side: a first photoelectric conversion unit; an anti-reflection layer; a transparent conductive layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula R1NH3M1X3 or HC(NH2)2M1X3, wherein R1 is an alkyl group, M1 is a divalent metal ion, and X is a halogen. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. The anti-reflection layer and the transparent conductive layer are in contact with each other, and a refractive index of the anti-reflection layer is lower than a refractive index of the transparent conductive layer.

Abstract: A sample-holding device for holding and lifting a sample includes a sample-holding surface facing the sample; and a positioning member provided at a peripheral part of the sample-holding surface, the positioning member comprising a contact part having an outward-facing part on a back side thereof; a first rounded or chamfered end; and a second rounded or chamfered end, wherein the contact part contacts with part of the sample when the sample is held or when the sample is off-point, wherein the first end is an end of a section comprising the contact part or a part smoothly continuing from the contact part, the end being on a distant side from the sample-holding surface, and the second end is an end of the outward-facing part, the end being located on a tipping side of the outward-facing part.

Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

Abstract: A method for manufacturing a stacked photoelectric conversion device includes forming an intermediate transparent conductive layer on a light-receiving surface of a crystalline silicon-based photoelectric conversion unit including a crystalline silicon substrate, and forming a thin-film photoelectric conversion unit on the intermediate transparent conductive layer. The stacked photoelectric conversion device includes the crystalline silicon-based photoelectric conversion unit, the intermediate transparent conductive layer, and the thin-film photoelectric conversion unit. The light-receiving surface of the crystalline silicon-based photoelectric conversion unit has a textured surface including a plurality of projections and recesses. The textured surface has an average height of 0.5 ?m or more. The intermediate transparent conductive layer fills the recesses of the textured surface and covers the tops of the projections of the textured surface.

Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

Abstract: A tandem-type photoelectric conversion device includes, arranged in the following order from a light-incident side: a first photoelectric conversion unit; an anti-reflection layer; a transparent conductive layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula R1NH3M1X3 or HC(NH2)2M1X3, wherein R1 is an alkyl group, M1 is a divalent metal ion, and X is a halogen. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. The anti-reflection layer and the transparent conductive layer are in contact with each other, and a refractive index of the anti-reflection layer is lower than a refractive index of the transparent conductive layer.

Abstract: A photoelectric conversion device includes, arranged in the following order from a light-receiving side: a transparent electroconductive layer; a first photoelectric conversion unit that is a perovskite-type photoelectric conversion unit; and a second photoelectric conversion unit. The first photoelectric conversion unit includes, arranged in the following order from the light-receiving side: a hole transporting layer; a light absorbing layer including a photosensitive material of perovskite-type crystal structure represented by general formula RNH3MX3 or HC(NH2)2MX3; and an electron transporting layer. The second photoelectric conversion unit includes a light absorbing layer having a bandgap narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit. A product of a resistivity ? and a thickness t of the hole transporting layer satisfies ?t?0.1 ?Q·m2. The transparent electroconductive layer is in contact with the hole transporting layer.

Abstract: A sample-holding device for holding and lifting a sample includes a sample-holding surface facing the sample; and a positioning member provided at a peripheral part of the sample-holding surface, the positioning member comprising a contact part having an outward-facing part on a back side thereof; a first rounded or chamfered end; and a second rounded or chamfered end, wherein the contact part contacts with part of the sample when the sample is held or when the sample is off-point, wherein the first end is an end of a section comprising the contact part or a part smoothly continuing from the contact part, the end being on a distant side from the sample-holding surface, and the second end is an end of the outward-facing part, the end being located on a tipping side of the outward-facing part.