Abstract: A semiconductor module includes: a semiconductor element having a first main electrode and a second main electrode; a first conductive member and a second conductive member connected to the first main electrode and the second main electrode, respectively, and placed to sandwich the semiconductor element; and a main terminal including a first main terminal continuous from the first conductive member and a second main terminal continuous from the second conductive member. The main terminal has a facing portion, a non-facing portion, a first connection portion, and a second connection portion. In a width direction, a formation position of the second connection portion overlaps with a formation position of the first connection portion.

Abstract: A semiconductor element includes an element having a gate electrode provided in a semiconductor substrate. The semiconductor substrate has an emitter electrode arranged on an upper surface and a collector electrode arranged on a lower surface. A gate pad is arranged at a different position from the emitter electrode on the upper surface. A gate resistor arranged on the upper surface has an adjustable resistance value, and is connected between the gate electrode and the gate pad.

Abstract: A semiconductor device includes a semiconductor element configured to form an upper-lower arm circuit of a power conversion device. The semiconductor element includes a control electrode, a high-potential electrode and a low-potential electrode. A parasitic capacitance between the control electrode and the high-potential electrode changes according to a potential difference between the high-potential electrode and the low-potential electrode. A value of the parasitic capacitance at a time when the potential difference is equal to 80 percent of a breakdown voltage of the semiconductor element is defined as a first capacitance value. An arbitrary value of the parasitic capacitance at a time when the potential difference is in an inclusive range of 20 percent to 40 percent of the breakdown voltage is defined as a second capacitance value. The first capacitance value is larger than the second capacitance value.

Abstract: A semiconductor module includes: a semiconductor element having a first main electrode and a second main electrode; a first conductive member and a second conductive member connected to the first main electrode and the second main electrode, respectively, and placed to sandwich the semiconductor element; and a main terminal including a first main terminal continuous from the first conductive member and a second main terminal continuous from the second conductive member. The main terminal has a facing portion, a non-facing portion, a first connection portion, and a second connection portion. In a width direction, a formation position of the second connection portion overlaps with a formation position of the first connection portion.

Abstract: A semiconductor device includes at least one semiconductor element, a sealing resin body, a first main terminal, and a second main terminal. The at least one semiconductor element has, as main electrodes, a first main electrode and a second main electrode. A main current flows between the first main electrode and the second main electrode. The sealing resin body seals the at least one semiconductor element. The first main terminal is electrically connected to the first main electrode inside the sealing resin body. The second main terminal is electrically connected to the second main electrode inside the sealing resin body. Each of the first main terminal and the second main terminal extends to an outside of the sealing resin body for connecting to an external member.

Abstract: A drive circuit includes a first level shift circuit, a second level shift circuit, a pre-driver, and a high-side transistor. The first level shift circuit outputs a first switch signal. The second level shift circuit outputs a second switch signal. The pre-driver includes a first switch portion configured to perform switching in accordance with the first switch signal and a second switch portion configured to output a gate signal in accordance with the second switch signal. The high-side transistor outputs a high-side output signal to an output terminal with a second power supply voltage which is fed in accordance with the gate signal.

Abstract: A drive circuit includes a first level shift circuit, a second level shift circuit, a pre-driver, and a high-side transistor. The first level shift circuit outputs a first switch signal. The second level shift circuit outputs a second switch signal. The pre-driver includes a first switch portion configured to perform switching in accordance with the first switch signal and a second switch portion configured to output a gate signal in accordance with the second switch signal. The high-side transistor outputs a high-side output signal to an output terminal with a second power supply voltage which is fed in accordance with the gate signal.

Abstract: A power semiconductor device includes a first output transistor connected to a first node at a first end of a current path thereof. The power semiconductor device further includes a second output transistor connected to a second end of the current path of the first output transistor at a first end of a current path thereof and to a second node at a second end of the current path. The power semiconductor device further includes a gate driver circuit that controls the first and second output transistors.

Abstract: A power amplifier circuit has a Gm amplifier, first and second transistors, third and fourth transistors consisting a mirror circuit, fifth and sixth transistors consisting a mirror circuit, seventh and eighth transistors consisting a mirror circuit, a ninth transistor of the first conductivity type which is connected at a first end thereof to the first power supply rail, connected at a second end thereof to a signal output terminal for outputting an amplified signal, and connected at a control terminal thereof to the inverting output terminal, and a tenth transistor of the second conductivity type connected at a first end thereof to the signal output terminal, connected at a second end thereof to the second power supply rail, and connected at a control terminal thereof to the noninverting output terminal.