Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer.

Abstract: A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.

Abstract: An optimization apparatus includes an output data acquirer to acquire output data expressing a result of experiment or simulation based input parameters, input/output data storage to store the input parameters and the output data corresponding to the input parameters, as a pair, an evaluation value calculator to calculate evaluation values of the output data, an input parameter converter to generate conversion parameters of a dimension number changed from the dimension number of the input parameters, a next-input parameter decider to decide next input parameters based on pairs of the conversion parameters and the evaluation values corresponding to the conversion parameters, and a repetition determiner to repeat operations of the output data acquirer, the input/output data storage, the evaluation value calculator, the input parameter converter, and the next-input parameter decider, until satisfying a predetermined condition.

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer.

Abstract: A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.

Abstract: An optimization apparatus includes an output data acquirer to acquire output data expressing a result of experiment or simulation based input parameters, input/output data storage to store the input parameters and the output data corresponding to the input parameters, as a pair, an evaluation value calculator to calculate evaluation values of the output data, an input parameter converter to generate conversion parameters of a dimension number changed from the dimension number of the input parameters, a next-input parameter decider to decide next input parameters based on pairs of the conversion parameters and the evaluation values corresponding to the conversion parameters, and a repetition determiner to repeat operations of the output data acquirer, the input/output data storage, the evaluation value calculator, the input parameter converter, and the next-input parameter decider, until satisfying a predetermined condition.