Patents by Inventor Ryota Negishi

Ryota Negishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9873654
    Abstract: A mixture of polyfluoroalkene carboxylic acids or salts thereof represented by the general formulas: CnF2n+1CH?CF(CF2CF2)mCF2COOM and Cn?1F2n?1CF?CHCF2(CF2CF2)mCF2COOM wherein M is a hydrogen atom, an ammonium salt, an organic amine salt or an alkali metal, n is an integer of 1 to 6 and m is an integer of 0 to 2. The mixture of polyfluoroalkene carboxylic acids or salts thereof is produced by subjecting a polyfluoroalkane carboxylic acids represented by the general formula: CnF2n+1(CH2CF2)(CF2CF2)mCF2COOH to a dehydrofluorination reaction in the presence of a nitrogen-containing heterocyclic compound catalyst, and has a lower critical micelle concentration and less surface tension at that time, therefore, the mixture of polyfluoroalkene carboxylic acids or salts thereof can be effectively used as a surfactant in the polymerization of fluorine-containing monomers.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: January 23, 2018
    Assignee: Unimatec Co., Ltd.
    Inventors: Yuichiro Oda, Ryota Negishi
  • Publication number: 20170350856
    Abstract: A field effect transistor and a sensor using the field effect transistor is provided. The field effect transistor can be manufactured so as to have uniform properties by simple steps at low costs, and can stably detect, when used as a sensor, a very small amount of analyte with a high sensitivity while the properties are hardly deteriorated. A channel of the field effect transistor is constituted by a single-walled carbon nanotube thin film that is grown, by a chemical vapor deposition method, using particles of a nonmetallic material as growth nuclei, the nonmetallic material containing 500 mass ppm or less metallic impurities that contain a metal and its compounds.
    Type: Application
    Filed: August 6, 2015
    Publication date: December 7, 2017
    Applicants: NIPPON KAYAKU KABUSHIKI KAISHA, OSAKA UNIVERSITY
    Inventors: Yoshihiro KOBAYASHI, Ryota NEGISHI, Hiroto KASE, Michiharu ARIFUKU, Noriko KIYOYANAGI, Tomio MORINO
  • Publication number: 20170226039
    Abstract: A mixture of polyfluoroalkene carboxylic acids or salts thereof represented by the general formulas: CnF2n+1CH?CF(CF2CF2)mCF2COOM and Cn?1F2n?1CF?CHCF2(CF2CF2)mCF2COOM wherein M is a hydrogen atom, an ammonium salt, an organic amine salt or an alkali metal, n is an integer of 1 to 6 and m is an integer of 0 to 2. The mixture of polyfluoroalkene carboxylic acids or salts thereof is produced by subjecting a polyfluoroalkane carboxylic acids represented by the general formula: CnF2n+1(CH2CF2)(CF2CF2)mCF2COOH to a dehydrofluorination reaction in the presence of a nitrogen-containing heterocyclic compound catalyst, and has a lower critical micelle concentration and less surface tension at that time, therefore, the mixture of polyfluoroalkene carboxylic acids or salts thereof can be effectively used as a surfactant in the polymerization of fluorine-containing monomers.
    Type: Application
    Filed: July 28, 2015
    Publication date: August 10, 2017
    Inventors: Yuichiro ODA, Ryota NEGISHI
  • Patent number: 9440855
    Abstract: Problem To provide a process for producing single-walled carbon nanotubes with which highly pure, high-quality single-walled carbon nanotubes can be produced with high efficiency, and to provide a transparent conductive film using the single-walled carbon nanotubes obtained by that production method. Solution A process for producing single-walled carbon nanotubes by chemical vapor deposition (CVD), wherein particles of a nonmetallic material containing 500 ppm or lower of metallic impurities including metals and compounds thereof are used as growth nuclei; and after a growth gas is introduced into a furnace used for growing carbon nanotubes, the growth gas used in an initial stage of growth of carbon nanotubes and the growth gas used in a stage of growth of regular carbon nanotubes (stationary growth stage) thereafter are prepared to different compositions and different partial pressures.
    Type: Grant
    Filed: February 12, 2013
    Date of Patent: September 13, 2016
    Assignees: Osaka University, Nippon Kayaku Kabushiki Kaisha
    Inventors: Yoshihiro Kobayashi, Ryota Negishi, Shoji Koriyama, Shogo Agata, Kazuki Fujimoto, Michiharu Arifuku, Masaki Shinmoto, Masahiro Imaizumi, Noriko Kiyoyanagi
  • Publication number: 20140056800
    Abstract: Problem To provide a process for producing single-walled carbon nanotubes with which highly pure, high-quality single-walled carbon nanotubes can be produced with high efficiency, and to provide a transparent conductive film using the single-walled carbon nanotubes obtained by that production method. Solution A process for producing single-walled carbon nanotubes by chemical vapor deposition (CVD), wherein particles of a nonmetallic material containing 500 ppm or lower of metallic impurities including metals and compounds thereof are used as growth nuclei; and after a growth gas is introduced into a furnace used for growing carbon nanotubes, the growth gas used in an initial stage of growth of carbon nanotubes and the growth gas used in a stage of growth of regular carbon nanotubes (stationary growth stage) thereafter are prepared to different compositions and different partial pressures.
    Type: Application
    Filed: February 12, 2013
    Publication date: February 27, 2014
    Applicants: NIPPON KAYAKU KABUSHIKI KAISHA, OSAKA UNIVERSITY
    Inventors: Yoshihiro Kobayashi, Ryota Negishi, Shoji Koriyama, Shogo Agata, Kazuki Fujimoto, Michiharu Arifuku, Masaki Shinmoto, Masahiro Imaizumi, Noriko Kiyoyanagi