Abstract: Certain embodiments provide a semiconductor device including a semiconductor substrate, a semiconductor element, and wiring. The semiconductor element has an electrode provided on a surface of the semiconductor substrate. The electrode includes a junction layer joined to the surface of the semiconductor substrate, a diffusion-suppressing layer provided on the junction layer, and a pad layer provided on the diffusion-suppressing layer. The wiring is provided on a back surface of the semiconductor substrate and on an inner surface of a through hole which penetrates the semiconductor substrate immediately below the electrode. The wiring is electrically connected to the electrode.

Abstract: Certain embodiments provide a semiconductor device including a semiconductor substrate, a semiconductor element, and wiring. The semiconductor element has an electrode provided on a surface of the semiconductor substrate. The electrode includes a junction layer joined to the surface of the semiconductor substrate, a diffusion-suppressing layer provided on the junction layer, and a pad layer provided on the diffusion-suppressing layer. The wiring is provided on a back surface of the semiconductor substrate and on an inner surface of a through hole which penetrates the semiconductor substrate immediately below the electrode. The wiring is electrically connected to the electrode.

Abstract: A field effect transistor includes a stacked body, a source electrode, a drain electrode, a gate electrode, a dielectric layer and a silicon nitride layer. The stacked layer has a heterojunction made of a nitride semiconductor. The source and drain electrodes are provided on a surface of the stacked body. The gate electrode is provided on the surface of the stacked body between the source and the drain electrodes, and has a field plate portion. The dielectric layer is provided so as to cover an intersection line of a first side surface of the gate electrode and the surface of the stacked body. The silicon nitride layer is provided so as to cover a region between the source electrode and the gate electrode and a region between the dielectric layer and the drain electrode. The field plate portion protrudes from the first side surface.

Abstract: A semiconductor device concerning an embodiment is provided with a plate-like semiconductor substrate, electrode pads, electrode connecting conductors, and a source electrode back pad. The semiconductor substrate has a first cutout section in a first side, and has a second cutout section and a third cutout section in a second side. A drain electrode connecting conductor is provided in the first cutout section, and one end thereof touches the drain electrode pad, and the other end thereof is exposed in a back surface of the semiconductor substrate. A gate electrode connecting conductor is provided in the third cutout section, and one end thereof touches the gate electrode pad, and the other end thereof is exposed in the back of the semiconductor substrate. A source electrode connecting conductor is provided in the second cutout section, and one end thereof touches the source electrode pad.

Abstract: A semiconductor device includes a semiconductor layer, an insulating film, a gate electrode, a drain electrode, and a source electrode. The semiconductor layer includes an active layer and is formed on a semi-insulating semiconductor substrate, and a tapered recess area having an inclined sidewall is formed on a surface of the semiconductor layer. The insulating film is formed on the semiconductor layer and has a through hole for exposing the recess area. The through hole has a tapered sidewall which is inclined at an angle smaller than the sidewall of the recess area. The gate electrode is formed so as to fill the recess area and the through hole. The drain electrode and the source electrode are formed at positions on opposite sides of the recess area on the semiconductor layer.

Abstract: A field effect transistor includes a stacked body, a source electrode, a drain electrode, a gate electrode, a dielectric layer and a silicon nitride layer. The stacked layer has a heterojunction made of a nitride semiconductor. The source and drain electrodes are provided on a surface of the stacked body. The gate electrode is provided on the surface of the stacked body between the source and the drain electrodes, and has a field plate portion. The dielectric layer is provided so as to cover an intersection line of a first side surface of the gate electrode and the surface of the stacked body. The silicon nitride layer is provided so as to cover a region between the source electrode and the gate electrode and a region between the dielectric layer and the drain electrode. The field plate portion protrudes from the first side surface.

Abstract: A semiconductor device includes a semiconductor layer, an insulating film, a gate electrode, a drain electrode, and a source electrode. The semiconductor layer includes an active layer and is formed on a semi-insulating semiconductor substrate, and a tapered recess area having an inclined sidewall is formed on a surface of the semiconductor layer. The insulating film is formed on the semiconductor layer and has a through hole for exposing the recess area. The through hole has a tapered sidewall which is inclined at an angle smaller than the sidewall of the recess area. The gate electrode is formed so as to fill the recess area and the through hole. The drain electrode and the source electrode are formed at positions on opposite sides of the recess area on the semiconductor layer.