Abstract: A semiconductor device includes a first gate electrode, an insulating part, a source electrode, a drain electrode, and a contact part. The insulating part is on one surface of the first gate electrode. The source electrode is connected to the insulating part. The drain electrode is connected to the insulating part. The contact part is between the source electrode and the drain electrode and on the insulating part. The contact part contains an atomic layered material. The contact part has a second part contactable with a sample. The second surface is opposite to a first surface facing the insulating part. A surface of the insulating part, the surface facing the contact part, has an uneven structure with respect to the first gate electrode.

Abstract: A semiconductor device includes a first gate electrode, a first insulating unit, a source electrode, a drain electrode, and a contact part. The first insulating unit is provided on a second gate electrode configured to control a reference voltage in a transport characteristic. The source electrode is connected to the first insulating unit. The drain electrode is connected to the first insulating unit. The contact part is provided between the source electrode and the drain electrode on the first insulating unit, and being able to be in contact with a sample. The sample is able to be in contact with the first gate electrode. A surface opposite to the first insulating unit, of the contact part is configured to be in contact with the samp1e.