Abstract: A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

Abstract: The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am?1BmO3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb. A flux layer, containing a composition satisfying the inequality 0<CuO/Bi2O3<2 and/or 0?TiO/Bi2O3<7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer. A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown. A CuO flux layer is deposited on a wafer and Bi—Ti—O is supplied to the flux layer using a Bi6Ti3O12, Bi7Ti3O12, or Bi8Ti3O12 target of which the Bi content is greater than that of an object film such that a Bi4Ti3O12 single-crystalline thin-film is formed above the wafer.

Abstract: A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

Abstract: The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am-1BmO3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb. A flux layer, containing a composition satisfying the inequality 0<CuO/Bi2O3<2 and/or 0?TiO/Bi2O3<7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer. A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown. A CuO flux layer is deposited on a wafer and Bi—Ti—O is supplied to the flux layer using a Bi6Ti3O12, Bi7Ti3O12, or Bi8Ti3O12 target of which the Bi content is greater than that of an object film such that a Bi4Ti3O12 single-crystalline thin-film is formed above the wafer.

Abstract: It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.

Abstract: An apparatus for producing hydrogen is able to measure a position of a interface or a surface boundary of liquids in a reaction vessel without direct contact. An apparatus for producing hydrogen by an IS process includes a reaction vessel, a radiation source, a radiation detector, and a data processing unit. Reacting liquids are to be introduced in the reaction vessel. The radiation source is provided at a first side wall of the reaction vessel. The radiation detector is provided at a second side wall which faces the first side wall provided with the radiation source. The data processing unit is connected to the radiation detector, which receives radiation data transmitted through the reaction vessel, from the radiation detector. The radiation data processing unit estimates constituents and concentrations of the reacting liquids from the radiation data.

Abstract: An apparatus for producing hydrogen is able to measure a position of a interface or a surface boundary of liquids in a reaction vessel without direct contact. An apparatus for producing hydrogen by an IS process includes a reaction vessel, a first ultrasonic probe and a second ultrasonic probe. Reacting liquids are introduced to the reaction vessel. The first ultrasonic probe is provided at the bottom of the reaction vessel to detect a position of a boundary surface of the reacting liquids. The second ultrasonic probe is provided at the side wall of the reaction vessel to compensate the sound velocity.