Patents by Inventor Ryota Takemura
Ryota Takemura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978812Abstract: A waveguide photodetector includes a first contact layer of a first conductivity type, a waveguide layer, and a second contact layer of a second conductivity type that are sequentially formed on the semiconductor substrate. The waveguide layer includes a first cladding layer of the first conductivity type disposed on a side of the first contact layer, a second cladding layer of the second conductivity type disposed on a side of the second contact layer, and the core layer disposed between the first cladding layer and the second cladding layer. The core layer includes a light absorption layer and an impurity-doped light absorption layer that has a higher concentration of a p-type impurity than that of the light absorption layer and is disposed on a side of a light incident face.Type: GrantFiled: February 26, 2020Date of Patent: May 7, 2024Assignee: Mitsubishi Electric CorporationInventor: Ryota Takemura
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Publication number: 20240116392Abstract: A server device displays on a user terminal a profile setting screen that allows a user to enter information on the user's needs regarding battery replacement, and in response to the user's entry through the screen, acquires profile information (setting information) on the user's needs. When a specific event occurs (i.e., provision of information on a suitable battery station or an alert of battery replacement necessity), the server device displays on the user terminal a notification screen (station screen or alert screen) for notification of the event, generated based on the profile information.Type: ApplicationFiled: February 1, 2022Publication date: April 11, 2024Applicant: Panasonic Intellectual Property Management Co., Ltd.Inventors: Ryota SAITO, Masashi TAKEMURA, Manano TAGUCHI
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Publication number: 20240116393Abstract: A server device acquires profile information (setting information) on user's needs regarding battery replacement from a user terminal, and analyzes historical information on battery replacement at each station to generate an unavailability index representing a degree of unavailability of battery lease. When a specific event occurs (i.e., information on a suitable battery station or an alert of battery replacement necessity is provided), a user terminal displays a notification screen (station screen or alert screen) for notification of the event, generated by the server device based on profile information and an unavailability index.Type: ApplicationFiled: February 1, 2022Publication date: April 11, 2024Applicant: Panasonic Intellectual Property Management Co., Ltd.Inventors: Ryota SAITO, Masashi TAKEMURA, Manano TAGUCHI
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Patent number: 11862747Abstract: A semiconductor light-receiving element (50) is a semiconductor light-receiving element in which a multi-plication layer (2), an electric-field control layer (3), a light absorption layer (4) and a window layer (5) are sequentially formed on a semiconductor substrate (1), and a p-type region (6) is formed in the window layer (5). The p-type region (6) has a first p-type portion (14) and a second p-type portion (15) whose current multiplication factor due to light incidence is larger than that of the first p-type portion (14). The first p-type portion (14) is formed as a central portion of the p-type region (6), the central portion including a central axis (21c) perpendicular to the semiconductor substrate (1), and the second p-type portion (15) is formed on an outer periphery of the central portion in a radial direction about the central axis (21c).Type: GrantFiled: April 5, 2019Date of Patent: January 2, 2024Assignee: Mitsubishi Electric CorporationInventors: Ryota Takemura, Matobu Kikuchi
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Publication number: 20230178666Abstract: A ridge structure (7) including at least a light-absorbing layer (4) is provided on a semiconductor substrate (1). A semiconductor embedding layer (8) has a refractive index lower than that of the light-absorbing layer (4) and embeds a side surface of the light-absorbing layer (4). A semiconductor layer (13) has a refractive index between that of the light-absorbing layer (4) and that of the semiconductor embedding layer (8) and is provided between the side surface of the light-absorbing layer (4) and the semiconductor embedding layer (8). The refractive index of the semiconductor layer (13) is n3, a wavelength of the incident light (15) is ?, a thickness of the semiconductor layer (13) in a lateral direction is in a range of-30% to +20% of ?/(4xn3).Type: ApplicationFiled: October 9, 2020Publication date: June 8, 2023Applicant: Mitsubishi Electric CorporationInventor: Ryota TAKEMURA
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Publication number: 20230055105Abstract: A waveguide photodetector includes a first contact layer of a first conductivity type, a waveguide layer, and a second contact layer of a second conductivity type that are sequentially formed on the semiconductor substrate. The waveguide layer includes a first cladding layer of the first conductivity type disposed on a side of the first contact layer, a second cladding layer of the second conductivity type disposed on a side of the second contact layer, and the core layer disposed between the first cladding layer and the second cladding layer. The core layer includes a light absorption layer and an impurity-doped light absorption layer that has a higher concentration of a p-type impurity than that of the light absorption layer and is disposed on a side of a light incident face.Type: ApplicationFiled: February 26, 2020Publication date: February 23, 2023Applicant: Mitsubishi Electric CorporationInventor: Ryota TAKEMURA
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Patent number: 11329179Abstract: A multiplication layer on a semiconductor substrate of n-type contains Al atoms. An electric field control layer on the multiplication layer is of p-type, and includes a high-concentration area, and a low-concentration area lower in impurity concentration than the high-concentration area which is formed outside the high-concentration area. An optical absorption layer on the electric field control layer is lower in impurity concentration than the high-concentration area. A window layer of n-type formed on the optical absorption layer is larger in band gap than the optical absorption layer. A light-receiving area of p-type is formed apart from an outer edge of the window layer, and at least partly faces the high-concentration area through the window layer and the optical absorption layer. The guard ring area of p-type which the window layer separates from the light-receiving area penetrates through the window layer to extend into the optical absorption layer.Type: GrantFiled: September 15, 2017Date of Patent: May 10, 2022Assignee: Mitsubishi Electric CorporationInventors: Ryota Takemura, Eitaro Ishimura, Harunaka Yamaguchi
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Publication number: 20220109080Abstract: A semiconductor light-receiving element (50) is a semiconductor light-receiving element in which a multi-plication layer (2), an electric-field control layer (3), a light absorption layer (4) and a window layer (5) are sequentially formed on a semiconductor substrate (1), and a p-type region (6) is formed in the window layer (5). The p-type region (6) has a first p-type portion (14) and a second p-type portion (15) whose current multiplication factor due to light incidence is larger than that of the first p-type portion (14). The first p-type portion (14) is formed as a central portion of the p-type region (6), the central portion including a central axis (21c) perpendicular to the semiconductor substrate (1), and the second p-type portion (15) is formed on an outer periphery of the central portion in a radial direction about the central axis (21c).Type: ApplicationFiled: April 5, 2019Publication date: April 7, 2022Applicant: Mitsubishi Electric CorporationInventors: Ryota TAKEMURA, Matobu KIKUCHI
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Publication number: 20200203544Abstract: A multiplication layer on a semiconductor substrate of n-type contains Al atoms. An electric field control layer on the multiplication layer is of p-type, and includes a high-concentration area, and a low-concentration area lower in impurity concentration than the high-concentration area which is formed outside the high-concentration area. An optical absorption layer on the electric field control layer is lower in impurity concentration than the high-concentration area. A window layer of n-type formed on the optical absorption layer is larger in band gap than the optical absorption layer. A light-receiving area of p-type is formed apart from an outer edge of the window layer, and at least partly faces the high-concentration area through the window layer and the optical absorption layer. The guard ring area of p-type which the window layer separates from the light-receiving area penetrates through the window layer to extend into the optical absorption layer.Type: ApplicationFiled: September 15, 2017Publication date: June 25, 2020Applicant: Mitsubishi Electric CorporationInventors: Ryota TAKEMURA, Eitaro ISHIMURA, Harunaka YAMAGUCHI
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Patent number: 10553742Abstract: A substrate has a front surface and a back surface opposite from the front surface. An n-type layer, a multiplication layer, a p-type electric field control layer, a light absorption layer, and a window layer are layered in order on the front surface. A p-type region is provided in part of the window layer. An anode electrode is provided on the p-type region and connected to the p-type region. An anode pad and a cathode pad are provided on the back surface. First and second connecting holes penetrates the substrate. A third connecting hole penetrates from the window layer to the n-type layer. The cathode pad is electrically connected to the n-type layer via the first connecting hole. The anode pad is electrically connected to the anode electrode via the second and third connecting holes. A light-receiving region is provided on the back surface.Type: GrantFiled: October 28, 2016Date of Patent: February 4, 2020Assignee: Mitsubishi Electric CorporationInventors: Ryota Takemura, Nobuo Ohata, Yoshifumi Sasahata, Kazuki Yamaji
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Publication number: 20190296175Abstract: A substrate has a front surface and a back surface opposite from the front surface. An n-type layer, a multiplication layer, a p-type electric field control layer, a light absorption layer, and a window layer are layered in order on the front surface. A p-type region is provided in part of the window layer. An anode electrode is provided on the p-type region and connected to the p-type region. An anode pad and a cathode pad are provided on the back surface. First and second connecting holes penetrates the substrate. A third connecting hole penetrates from the window layer to the n-type layer. The cathode pad is electrically connected to the n-type layer via the first connecting hole. The anode pad is electrically connected to the anode electrode via the second and third connecting holes. A light-receiving region is provided on the back surface.Type: ApplicationFiled: October 28, 2016Publication date: September 26, 2019Applicant: Mitsubishi Electric CorporationInventors: Ryota TAKEMURA, Nobuo OHATA, Yoshifumi SASAHATA, Kazuki YAMAJI
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Patent number: 9426656Abstract: An on-vehicle device is configured to be able to communicate with a mobile device, and includes a reception unit, an interruption detection unit, a determination unit, and a display control unit. The reception unit receives image information transmitted from a particular mobile device which is a mobile device with which communication is established. The interruption detection unit detects that reception of the image information is interrupted. The determination unit determines whether or not the transmission device which transmits the image information is the particular mobile device, when the reception unit receives image information again after interruption of the reception is detected. The display control unit stops displaying the image information transmitted from the transmission device on a display device when the transmission device is determined not to be the particular mobile device.Type: GrantFiled: September 3, 2013Date of Patent: August 23, 2016Assignees: FUJITSU TEN LIMITED, HONDA MOTOR CO., LTD.Inventors: Ryota Takemura, Takanori Fujiwara, Atsuyuki Suzuki, Junichi Hirose
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Patent number: 9406830Abstract: A semiconductor light-receiving device includes: a substrate; a p-type conductive layer, a light absorption layer having a smaller bandgap than that of incident light, a multiplication layer producing avalanche multiplication, and an n-type window layer laminated in that order on the substrate; an n-type conductive layer in a region of part of the n-type window layer; and a first p-type conductive region in a region of the n-type window layer that is not in contact with the n-type conductive layer, wherein the first p-type conductive region does not reach the multiplication layer and is not in contact with any electrode to which power is supplied from outside.Type: GrantFiled: October 30, 2015Date of Patent: August 2, 2016Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Ryota Takemura, Masaharu Nakaji, Kazuki Yamaji
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Patent number: 9257577Abstract: A light receiving element includes a substrate of a first conduction type, a light absorbing layer of the first conduction type formed on the substrate, a diffusion layer of a second conduction type formed on a portion of the light absorbing layer, a window layer of the first conduction type formed on the light absorbing layer so as to surround the diffusion layer and having a bandgap larger than that of the light absorbing layer, an anode electrode formed on the diffusion layer, and a cathode electrode provided on the substrate so as to contact the substrate without contacting each of the window layer and the light absorbing layer, wherein a groove is formed which surrounds a boundary between the diffusion layer and the window layer as viewed in plan and extends through the window layer and the light absorbing layer as viewed in section.Type: GrantFiled: April 9, 2015Date of Patent: February 9, 2016Assignee: Mitsubishi Electric CorporationInventors: Matobu Kikuchi, Masaharu Nakaji, Ryota Takemura, Kazuki Yamaji
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Publication number: 20160020339Abstract: A light receiving element includes a substrate of a first conduction type, a light absorbing layer of the first conduction type formed on the substrate, a diffusion layer of a second conduction type formed on a portion of the light absorbing layer, a window layer of the first conduction type formed on the light absorbing layer so as to surround the diffusion layer and having a bandgap larger than that of the light absorbing layer, an anode electrode formed on the diffusion layer, and a cathode electrode provided on the substrate so as to contact the substrate without contacting each of the window layer and the light absorbing layer, wherein a groove is formed which surrounds a boundary between the diffusion layer and the window layer as viewed in plan and extends through the window layer and the light absorbing layer as viewed in section.Type: ApplicationFiled: April 9, 2015Publication date: January 21, 2016Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Matobu KIKUCHI, Masaharu NAKAJI, Ryota TAKEMURA, Kazuki YAMAJI
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Publication number: 20150223064Abstract: An on-vehicle device is configured to be able to communicate with a mobile device, and includes a reception unit, an interruption detection unit, a determination unit, and a display control unit. The reception unit receives image information transmitted from a particular mobile device which is a mobile device with which communication is established. The interruption detection unit detects that reception of the image information is interrupted. The determination unit determines whether or not the transmission device which transmits the image information is the particular mobile device, when the reception unit receives image information again after interruption of the reception is detected. The display control unit stops displaying the image information transmitted from the transmission device on a display device when the transmission device is determined not to be the particular mobile device.Type: ApplicationFiled: September 3, 2013Publication date: August 6, 2015Inventors: Ryota Takemura, Takanori Fujiwara, Atsuyuki Suzuki, Junichi Hirose
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Publication number: 20140131827Abstract: An i-type AlInAs avalanche multiplication layer is grown on an n-type InP substrate. A p-type AlInAs electric field reduction layer is grown on the i-type AlInAs avalanche multiplication layer. Transition layers are grown to cover the top surface of the electric field reduction layer. After the covering of the top surface of the electric field reduction layer by the transition layers, the temperature of the growth process is increased and an n?-type InGaAs light absorption layer is grown on the transition layer at a temperature higher than the growth temperature of the electric field reduction layer. The growth temperature of the transition layers is lower than that of the n?-type InGaAs light absorption layer. The transition layers have higher resistance to surface defects than the electric field reduction layer at temperatures higher than the growth temperature of the electric field reduction layer.Type: ApplicationFiled: July 18, 2013Publication date: May 15, 2014Inventors: Harunaka Yamaguchi, Ryota Takemura
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Publication number: 20130299936Abstract: An avalanche photodiode includes a substrate; an avalanche multiplying layer, a p-type electric field controlling layer, a light-absorbing layer, and a window layer sequentially laminated on the substrate. A p-type region is present in parts of the window layer and the light-absorbing layer. Carbon is the dopant of the electric field controlling layer. Zn is the dopant of the p-type region. A bottom face of the p-type region is closer to the substrate than is an interface between the light-absorbing layer and the window layer.Type: ApplicationFiled: January 21, 2013Publication date: November 14, 2013Applicant: Mitsubishi Electric CorporationInventors: Ryota Takemura, Eitaro Ishimura
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Patent number: 8399945Abstract: A semiconductor light detecting element includes: a semiconductor substrate; and a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially laminated on the semiconductor substrate. The distributed Bragg reflector layer includes first and second alternately laminated semiconductor layers with different band-gap wavelengths, sandwiching the wavelength of detected incident light. The sum of thicknesses a first and a second semiconductor layer is approximately one-half the wavelength of the incident light detected.Type: GrantFiled: May 20, 2010Date of Patent: March 19, 2013Assignee: Mitsubishi Electric CorporationInventors: Masaharu Nakaji, Ryota Takemura
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Publication number: 20120299144Abstract: A semiconductor light-detecting device includes: a semi-insulating substrate; and n light-detecting elements (n is a natural number equal to or larger than 4) electrically isolated from each other and on the semi-insulating substrate. Each light-detecting element includes a conductive layer of a first conductivity type, a light absorption layer, a window layer, and an impurity diffusion region of a second conductivity type, which are laminated, one on another, on the semi-insulating substrate. The light absorption layer is a photoelectrical converter. The impurity diffusion region is located in part of the window layer and serves as a light-detecting section. A part of the conductive layer and the light absorption layer use the same material. The n light-detecting elements are not all located on a common straight line.Type: ApplicationFiled: December 29, 2011Publication date: November 29, 2012Applicant: MITSHUBISHI ELECTRIC CORPORATIONInventors: Masaharu NAKAJI, Ryota TAKEMURA