Abstract: A method of manufacturing an optical member includes: providing a polycrystalline wavelength conversion member including phosphor particles and having a first surface and a second surface opposite to the first surface; forming a modified portion inside the wavelength conversion member by focusing laser light inside the wavelength conversion member; and cleaving the wavelength conversion member with the modified portion being a starting point, which includes pressing the wavelength conversion member from a first surface side.

Abstract: A manufacturing method of a resin component includes: providing a first resin member containing a polymer and a second resin member containing a polymer; and joining a first joining portion of the first resin member and a second joining portion of the second resin member to each other. The joining of the first resin member and the second resin member to each other includes irradiating the first joining portion of the first resin member with a laser light having a peak wavelength in a range from 350 nm to 420 nm is emitted in a presence of oxygen so as to cause multiphoton excitation of the first joining portion of the first resin member.

Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

Abstract: A method for producing a resin part includes: preparing an intermediate body comprising a first member and a second member, the first member containing a resin; and welding the first member with the second member by performing scanning of the intermediate body with a first laser beam and a second laser beam. In the welding of the first member with the second member, the scanning with the first laser beam and the second laser beam is performed in a state in which a center of a second spot is located on a rear side in a direction of the scanning with the first laser beam and the second laser beam as compared to a center of a first spot while at least a part of the first spot and at least a part of the second spot overlap with each other.

Abstract: A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

Abstract: A method for manufacturing a semiconductor element includes providing a wafer having a sapphire substrate and a semiconductor stacked body disposed on the sapphire substrate, performing a first scanning of a portion of the sapphire substrate in which a laser beam is irradiated into an interior of the sapphire substrate, performing a second scanning of the portion of the sapphire substrate in which a laser beam is irradiated into the interior of the sapphire substrate, the second scanning occurring after the first scanning and before a void is produced in the interior of the sapphire substrate irradiated with the laser beam in the first scanning, and separating the wafer into a plurality of semiconductor elements.

Abstract: A method for manufacturing a semiconductor element includes providing a wafer having a sapphire substrate and a semiconductor stacked body disposed on the sapphire substrate, performing a first scanning of a portion of the sapphire substrate in which a laser beam is irradiated into an interior of the sapphire substrate, performing a second scanning of the portion of the sapphire substrate in which a laser beam is irradiated into the interior of the sapphire substrate, the second scanning occurring after the first scanning and before a void is produced in the interior of the sapphire substrate irradiated with the laser beam in the first scanning, and separating the wafer into a plurality of semiconductor elements.