Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first transistor and a second transistor over an insulating surface; the first transistor and the second transistor share a metal oxide and a first conductor over the metal oxide; the first transistor includes a second conductor and a first insulator over the metal oxide and a third conductor over the first insulator; the second transistor includes a fourth conductor and a second insulator over the metal oxide and a fifth conductor over the second insulator; the first insulator is positioned in a region between the first conductor and the second conductor; the metal oxide and the third conductor overlap with each other with the first insulator therebetween; the second insulator is positioned in a region between the first conductor and the fourth conductor; and the metal oxide and the fifth conductor overlap with each other with the second insulator therebetween.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator, a second insulator over the first insulator, and a memory cell including a transistor and a capacitor. The transistor includes an oxide over the first insulator, a first conductor and a second conductor over the oxide, a third insulator over the oxide, and a third conductor over the third insulator. The third insulator and the third conductor are located in a first opening of the second insulator. The capacitor includes a fourth conductor in contact with a top surface of the second conductor, a fourth insulator over the fourth conductor, and a fifth conductor over the fourth insulator. The fourth conductor, the fourth insulator, and the fifth conductor are located in a second opening of the second insulator. A third opening is formed in the first insulator, the second insulator, and the first conductor. A sixth conductor is located in the third opening.

Abstract: A highly reliable display device is provided. The display device includes a first light-emitting element, a second light-emitting element adjacent to the first light-emitting element, a first insulating layer provided between the first light-emitting element and the second light-emitting element, and a second insulating layer over the first insulating layer. The first light-emitting element includes a first conductive layer, a second conductive layer covering an upper surface and a side surface of the first conductive layer, a first EL layer covering an upper surface and a side surface of the second conductive layer, and a common electrode over the first EL layer. The second light-emitting element includes a third conductive layer, a fourth conductive layer covering an upper surface and a side surface of the third conductive layer, a second EL layer covering an upper surface and a side surface of the fourth conductive layer, and the common electrode over the second EL layer.

Abstract: A semiconductor device that operates at high speed is provided. The semiconductor device is fabricated in the following manner: a first coating film over a first insulator and a second coating film over the first coating film are formed; a first layer is formed by partly removing the second coating film; a second layer is formed by partly removing the first coating film using the first layer as a mask; heat treatment is performed; a first oxide semiconductor is formed to cover a top surface of the first insulator, a side surface of the second layer, and a side surface and a top surface of the first layer; a second oxide semiconductor is formed in contact with the side surface of the second layer by processing the first oxide semiconductor by anisotropic etching; the first layer is removed; and a side surface of the second oxide semiconductor that is covered with the second layer is exposed by removing the second layer.

Abstract: A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, and a layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, a first common electrode over the first light-emitting layer, and a second common electrode over the first common electrode. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, the first common electrode over the second light-emitting layer, and the second common electrode over the first common electrode. The layer is provided between the first light-emitting device and the second light-emitting device. The second common electrode is provided over the layer.

Abstract: Use of silicon as a negative electrode active material particle causes a problem of expansion and contraction of the negative electrode active material particle due to charging and discharging. A negative electrode active material particle or a plurality of negative electrode active material particles are bound or fixed using a graphene compound to inhibit expansion and contraction of the negative electrode active material particle due to charging and discharging. In an all-solid-state secondary battery, an interface between a solid electrolyte and a negative electrode or an interface between the solid electrolyte and a positive electrode has the highest resistance. In order to reduce the interface resistance, at least the negative electrode active material particle is surrounded by a graphene compound to increase the conductivity. Alternatively, a positive electrode active material particle is surrounded by a graphene compound to increase the conductivity. Carrier ions, e.g.

Abstract: The present technology relates to a light receiving device that includes a pixel array unit in which pixels each having a first tap detecting charge photoelectrically converted by a photoelectric conversion unit and a second tap detecting charge photoelectrically converted by the photoelectric conversion unit are two-dimensionally arranged in a matrix. In the pixel array unit, four vertical signal lines for outputting a detection signal detected by any one of the first tap and the second tap to the outside of the pixel array unit are arranged for one pixel column.

Abstract: A method of manufacturing adhered components includes a process of applying adhesive to application areas on a surface of a first component, a process of placing a second component above the first component, and a process of pressurizing the second component toward the first component. In the pressurization process, the load applied to a pressurizer changes while sequentially undergoing a curvilinear increase period in which the load increases in a curved line as the compression amount of the adhesive increases, and a rapid increase period in which the load increases in a polygonal line with respect to the trajectory of the load in the curvilinear increase period as the compression amount increases. During pressurization by the pressurizer, the load is detected by a load sensor, the rapid increase period is detected based on the detection value of the load sensor, and the pressurization is stopped during the rapid increase period.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided.

Abstract: A semiconductor device that can be miniaturized or highly integrated and a manufacturing method thereof are provided. A semiconductor device includes a metal oxide, a first conductor and a second conductor over the metal oxide, a first insulator positioned over the metal oxide and between the first conductor and the second conductor, a second insulator over the first insulator, a third insulator over the second insulator, a third conductor over the third insulator, a fourth insulator positioned between the first conductor and the first insulator, and a fifth insulator positioned between the second conductor and the first insulator. The first insulator is in contact with the top surface and the side surface of the metal oxide, and oxygen is less likely to pass through the first insulator than the second insulator. The first conductor, the second conductor, the fourth insulator, and the fifth insulator contain the same metal element.

Abstract: An all-solid-state secondary battery having a higher level of safety than a conventional lithium-ion secondary battery using an electrolyte solution, specifically, a thin-film-type solid-state secondary battery, and a manufacturing method thereof are provided. As a solid electrolyte, a mixed material obtained by co-evaporation of SiO and an organic complex of lithium is used. That is, a solid electrolyte layer formed using a mixed material of an inorganic material and an organic material is used in a solid-state secondary battery. The ratio of oxygen to silicon in the solid electrolyte layer is higher than 1 and lower than 2.

Abstract: A transistor with a high on-state current and a semiconductor device with high productivity are provided. Included are a first oxide, a second oxide, a third oxide, and a fourth oxide over a first insulator; a first conductor over the third oxide; a second conductor over the fourth oxide; a second insulator over the first conductor; a third insulator over the second conductor; a fifth oxide positioned over the second oxide and between the third oxide and the fourth oxide; a sixth oxide over the fifth oxide; a fourth insulator over the sixth oxide; a third conductor over the fourth insulator; and a fifth insulator over the first insulator to the third insulator. The fifth oxide includes a region in contact with the second oxide to the fourth oxide and the first insulator. The sixth oxide includes a region in contact with the fifth oxide, the first conductor, and the second conductor. The fourth insulator includes a region in contact with at least the sixth oxide, the third conductor, and the fifth insulator.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first transistor including a first oxide, a second transistor including a second oxide, and a third oxide. The first oxide includes a channel formation region of the first transistor. The second oxide includes a channel formation region of the second transistor. The third oxide contains the same material as the first oxide and the second oxide. The third oxide is separated from the first oxide and the second oxide. In a top view, the third oxide is positioned between the first oxide and the second oxide. The third oxide is placed in the same layer as the first oxide and the second oxide.

Abstract: A lid opening-and-closing device that opens and closes an upper lid of a container, the container including: a container body; the upper lid; a locking mechanism that locks the upper lid onto the container body when the upper lid is mounted on the container body; and a strip provided to the upper lid, the device including: a placement platform on which the container is placed; a guide provided on both sides above the placement platform and comes into contact with a lower face of the strip to rotate the strip upward to an extent exceeding the predetermined value with respect to the container body when the container is inserted in the horizontal direction to a specified position of the placement platform; and a raising/lowering mechanism that moves the container body and the upper lid for which locking by the locking mechanism has been released, relatively in an up-and-down direction.

Abstract: A first lid opening-and-closing mechanism includes: a first holder that holds an upper lid of a first container; a first protrusion provided to protrude from the first holder toward one side direction with respect to the first holder and extends to outside of a casing; and a first raising/lowering driver that raises and lowers the first holder in a cantilevered manner with the first protrusion interposed therebetween. A second lid opening-and-closing mechanism includes: a second holder that holds an upper lid of a second container; a second protrusion provided to protrude from the second holder toward the one side direction and extends to the outside of the casing; and a second raising/lowering driver that raises and lowers the second holder in a cantilevered manner with the second protrusion interposed therebetween. The first raising/lowering driver and the second raising/lowering driver are located outside the casing in the one side direction.

Abstract: Webs include print patterns repeated at print pitches. The first web is intermittently fed at the print pitch of the first web by a first pair of feed rollers to a section. The second web is fed at the print pitch of the second web by a second pair of feed rollers to the section. The first web and the second web are fed in a superposed state by a downstream pair of feed rollers from the section. A first tension roller and a second tension roller engaging with the first web and the second web are biased by a biasing member via a linkage.

Abstract: A first sheet panel is folded along a first fold line, and thereby a first folded part is formed in the first sheet panel. Subsequently, the first folded part is folded back along a second fold line, and thereby a folded-back part is formed in the first sheet panel. A corner cut device cuts a second sheet panel and the folded-back part to form corner cut parts. At this time, the corner cut device prevents the first folded part and a base part of the first sheet panel from being cut.

Abstract: A first lid opening-and-closing mechanism includes: a first holder that holds an upper lid of a first container; a first protrusion provided to protrude from the first holder toward one side direction with respect to the first holder and extends to outside of a casing; and a first raising/lowering driver that raises and lowers the first holder in a cantilevered manner with the first protrusion interposed therebetween. A second lid opening-and-closing mechanism includes: a second holder that holds an upper lid of a second container; a second protrusion provided to protrude from the second holder toward the one side direction and extends to the outside of the casing; and a second raising/lowering driver that raises and lowers the second holder in a cantilevered manner with the second protrusion interposed therebetween. The first raising/lowering driver and the second raising/lowering driver are located outside the casing in the one side direction.

Abstract: A lid opening-and-closing device that opens and closes an upper lid of a container, the container including: a container body; the upper lid; a locking mechanism that locks the upper lid onto the container body when the upper lid is mounted on the container body; and a strip provided to the upper lid, the device including: a placement platform on which the container is placed; a guide provided on both sides above the placement platform and comes into contact with a lower face of the strip to rotate the strip upward to an extent exceeding the predetermined value with respect to the container body when the container is inserted in the horizontal direction to a specified position of the placement platform; and a raising/lowering mechanism that moves the container body and the upper lid for which locking by the locking mechanism has been released, relatively in an up-and-down direction.

Abstract: Webs include print patterns repeated at print pitches. The first web is intermittently fed at the print pitch of the first web by a first pair of feed rollers to a section. The second web is fed at the print pitch of the second web by a second pair of feed rollers to the section. The first web and the second web are fed in a superposed state by a downstream pair of feed rollers from the section. A first tension roller and a second tension roller engaging with the first web and the second web are biased by a biasing member via a linkage.