Abstract: Improved process flows and methods are provided for processing a semiconductor substrate have exposed dielectric and metal-containing surfaces. More specifically, improved process flows and methods are provided for pre-cleaning the metal-containing surfaces prior to depositing a metal material onto the metal-containing surfaces. Hot vapor-phase etching is used to remove a native oxide film from the metal-containing surfaces. Prior to hot vapor-phase etching, the semiconductor substrate is exposed to a first silicon-containing gas to deposit an inhibitor film onto the exposed dielectric and metal-containing surfaces. The inhibitor film protects the dielectric surfaces while the native oxide film is being removed via the hot vapor-phase etching. In some embodiments, the semiconductor substrate is exposed to a second silicon-containing gas, after hot vapor-phase etching, to remove residues of the hot vapor-phase etching process from the pre-cleaned metal-containing surfaces.

Abstract: A method for depositing a film on a substrate disposed in a processing chamber includes repeating a cycle. The cycle includes a precursor step and a reactant step, and may include purge steps. A reductant step is performed during at least a portion of the cycle. The precursor step includes exposing the substrate to a precursor gas to form an intermediate film from the precursor gas at the substrate. The precursor gas may be a metal halide gas, such as titanium tetrachloride gas. The reactant step includes exposing the substrate to a reactant gas to chemically react with the intermediate film to form the film. The reactant gas may be a hydronitrogen gas having at least two nitrogen atoms, such as hydrazine gas. The reductant step includes exposing the substrate to a reductant gas, such as a gas containing hydrogen, like hydrogen gas.

Abstract: A method for processing a substrate includes treating the substrate with a small molecular inhibitor (SMI), the substrate including a recess formed in a dielectric layer and a first metal layer in the recess, the SMI covering a surface of the first metal layer. The method further includes, after treating the substrate with the SMI, treating the substrate with a large molecular inhibitor (LMI), the LMI covering sidewalls of the dielectric layer in the recess. The method further includes heating the substrate to remove the SMI from the first metal layer and to expose the first metal layer in the recess, where the LMI remains on the sidewalls after removing the SMI from the first metal layer. The method further includes depositing a second metal over the first metal layer in the recess, where the LMI covering the sidewalls prevents deposition of the second metal on the dielectric layer.

Abstract: The present invention relates to technology for detecting three-dimensional motion of an object in a non-contact manner, at high speed, and with comparatively high precision. A speed detection section 11 detects speed of an object using a first laser beam 111 that is irradiated towards an object 100, and is reflected by the object 100. A distance detection section 12 detects speed of the object 100 using a second laser beam 121 that is irradiated towards the object 100, and is reflected by the object 100. The second laser beam 121 is configured to be irradiated at substantially the same time and to substantially the same position as the first laser beam 111. A motion calculation section 13 calculates motion of the object 100 using information on orientation of the first and second laser beams, the speed, and the distance.

Abstract: A plasma processing method for use in device isolation by shallow trench isolation in which an insulating film is embedded in a trench formed in silicon and the insulating film is planarized to form a device isolation film, the method includes a plasma nitriding the silicon of an inner wall surface of the trench by using a plasma before embedding the insulating film in the trench. The plasma nitriding is performed by using a plasma of a processing gas containing a nitrogen-containing gas under conditions in which a processing pressure ranges from 1.3 Pa to 187 Pa and a ratio of a volumetric flow rate of the nitrogen-containing gas to a volumetric flow rate of the entire processing gas ranges from 1% to 80% such that a silicon nitride film is formed on the inner wall surface of the trench to have a thickness of 1 to 10 nm.

Abstract: A plasma processing method performs a plasma oxidation on a substrate, on which a trench is formed after an oxide film is formed, by using a plasma processing apparatus for plasma-processing an object by using microwave plasma. In the plasma processing method, the substrate is mounted on a mounting table to which an ion attraction high frequency voltage is applied, and the plasma oxidation is performed while applying the ion attraction high frequency voltage to the substrate. Further, a process gas used in the plasma oxidation is a mixture of a rare gas having smaller atomic weight than that of argon gas, and oxygen gas, and the plasma processing is performed at a pressure of 6.7 to 133 Pa in a depressurized chamber.