Abstract: Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.

Abstract: The present invention realized miniaturization of a power supply device using a multiphase system. The power supply device includes, for example, a common control unit, a plurality of PWM-equipped drive units, and a plurality of inductors. The common control unit outputs clock signals respectively different in phase to the PWM-equipped drive units. The clock signals are controllable in voltage state individually respectively. For example, the clock signal can be brought to a high impedance state. In this case, the PWM-equipped drive unit detects this high impedance state and stops its own operation. It is thus possible to set the number of phases in multiphase arbitrarily without using another enable signal or the like.

Abstract: A voltage regulator has a voltage converter circuit and a control unit. The control unit controls the voltage converter circuit so that an output voltage attains a target voltage when the voltage regulator is in a no-load condition so as to have a transition characteristic in which the output voltage decreases with increase in the load current. The control unit calculates deviation between the output voltage and an ideal value thereof when a load condition of the voltage regulator is a first load condition, and corrects the target voltage by the output voltage adjustment unit. so The control unit also calculates deviation between rate of change of the output voltage with respect to the load current and an ideal value thereof, and corrects the transition characteristic so that the deviation becomes small to minimize deviation.

Abstract: A voltage clamping circuit which operates in a stable manner and a switching power source device which enables high-speed operation. In the switching power source device, one source/drain route is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current in an inductor and a second switching element which clamps a reverse electromotive voltage generated in the inductor. The voltage clamping circuit is used in a feedback route for setting a dead time.

Abstract: To improve reliability of a semiconductor device A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.

Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

Abstract: An apparatus, in one embodiment, can include a configuration including a plurality of heat generation devices. The apparatus also includes a plurality of thermal sensors respectively, operably connected to each of the plurality of heat generation devices, wherein each thermal sensor of the plurality of thermal sensors includes a respective output terminal configured to provide a voltage representative of the temperature of the respective heat generation device. The apparatus further includes an output circuit configured to output the highest temperature information among the heat generation devices. The output terminals of the plurality of thermal sensors are tied together. A corresponding method is also discussed.

Abstract: A power source device capable of improving the power conversion efficiency at a light load independent of an input power source voltage is realized. For example, a clock signal is output from a common control unit to a PWM-mounted drive unit including a reverse-current detection circuit in addition to a peak current control method. This clock signal is selected by a mode setting signal from either of a clock signal with a constant frequency or a clock signal which is generated via a one-shot pulse generation circuit every time an output voltage at an output power source node decreases. When the latter is selected, the switching frequency at a light load decreases and the power conversion efficiency improves. Furthermore, the peak current control method can reduce the input power source voltage dependence of the switching frequency.

Abstract: A step down convertor with a distributed driving system. In one embodiment, an apparatus is disclosed that includes an inductor coupled to an output node. The apparatus also includes first and second circuits. The first circuit can transmit current to the output node via the inductor, and the second can transmit current to the output node via the inductor. The apparatus also includes a third circuit for modifying operational aspects of the first circuit or the second circuit based on a magnitude of current flowing through the inductor.

Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

Abstract: The present invention realized miniaturization of a power supply device using a multiphase system. The power supply device includes, for example, a common control unit, a plurality of PWM-equipped drive units, and a plurality of inductors. The common control unit outputs clock signals respectively different in phase to the PWM-equipped drive units. The clock signals are controllable in voltage state individually respectively. For example, the clock signal can be brought to a high impedance state. In this case, the PWM-equipped drive unit detects this high impedance state and stops its own operation. It is thus possible to set the number of phases in multiphase arbitrarily without using another enable signal or the like.

Abstract: A voltage clamping circuit which operates in a stable manner and a switching power source device which enables high-speed operation. In the switching power source device, one source/drain route is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current in an inductor and a second switching element which clamps a reverse electromotive voltage generated in the inductor. The voltage clamping circuit is used in a feedback route for setting a dead time.

Abstract: A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion, and sealed in a resin. To first and second source pads for outputting the current flowing in the power MOSFET, a metal plate is bonded. A third source pad for sensing the source voltage of the power MOSFET is at a position not overlapping the metal plate. A coupled portion between a source wire forming the third pad and another source wire forming the first and second pads is at a position overlapping the metal plate.

Abstract: The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential.

Abstract: An apparatus, in one embodiment, can include a configuration including a plurality of heat generation devices. The apparatus also includes a plurality of thermal sensors respectively, operably connected to each of the plurality of heat generation devices, wherein each thermal sensor of the plurality of thermal sensors includes a respective output terminal configured to provide a voltage representative of the temperature of the respective heat generation device. The apparatus further includes an output circuit configured to output the highest temperature information among the heat generation devices. The output terminals of the plurality of thermal sensors are tied together. A corresponding method is also discussed.

Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

Abstract: A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.

Abstract: A method can include obtaining a voltage across a first transistor as an obtained voltage. The method can also include multiplying the obtained voltage by a predetermined multiple M to yield a multiplied voltage. The method can further include applying the multiplied voltage to a second transistor, wherein the second transistor is N times smaller than the first transistor. The method can additionally include providing an output current of the second transistor as an M/N scaled estimate of an output current of the first transistor.

Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

Abstract: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.