Patents by Inventor Ryoto Yoshita

Ryoto Yoshita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10892293
    Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: January 12, 2021
    Assignee: SONY CORPORATION
    Inventor: Ryoto Yoshita
  • Patent number: 10879280
    Abstract: A solid-state imaging device includes: a semiconductor substrate having a light incident surface; a photoelectric converter for each of the pixels; a charge accumulation section for each of the pixels; a first transfer transistor; a wiring layer on side opposite to the light incident surface; a first vertical electrode and a second vertical electrode extending from the surface opposite to the light incident surface to the photoelectric converter; a first light-blocking film in a thickness direction of the semiconductor substrate on at least a portion of a periphery of the photoelectric converter; and a second light-blocking film in a surface direction of the semiconductor substrate between the photoelectric converter and the charge accumulation section. The first vertical electrode and the second vertical electrode are disposed adjacently with a distance therebetween, and the distance is a half or less of a length of one side of the pixel.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: December 29, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Ryoto Yoshita, Takashi Machida, Yoshimichi Kumagai
  • Publication number: 20200403015
    Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.
    Type: Application
    Filed: September 2, 2020
    Publication date: December 24, 2020
    Applicant: Sony Corporation
    Inventors: Rena Suzuki, Hiroki Tojinbara, Ryoto Yoshita, Yoichi Ueda
  • Patent number: 10818722
    Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: October 27, 2020
    Assignee: Sony Corporation
    Inventors: Rena Suzuki, Hiroki Tojinbara, Ryoto Yoshita, Yoichi Ueda
  • Publication number: 20200235146
    Abstract: A solid-state imaging device includes: a semiconductor substrate having a light incident surface; a photoelectric converter for each of the pixels; a charge accumulation section for each of the pixels; a first transfer transistor; a wiring layer on side opposite to the light incident surface; a first vertical electrode and a second vertical electrode extending from the surface opposite to the light incident surface to the photoelectric converter; a first light-blocking film in a thickness direction of the semiconductor substrate on at least a portion of a periphery of the photoelectric converter; and a second light-blocking film in a surface direction of the semiconductor substrate between the photoelectric converter and the charge accumulation section. The first vertical electrode and the second vertical electrode are disposed adjacently with a distance therebetween, and the distance is a half or less of a length of one side of the pixel.
    Type: Application
    Filed: February 14, 2018
    Publication date: July 23, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Ryoto YOSHITA, Takashi MACHIDA, Yoshimichi KUMAGAI
  • Publication number: 20200227466
    Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.
    Type: Application
    Filed: April 1, 2020
    Publication date: July 16, 2020
    Inventor: RYOTO YOSHITA
  • Patent number: 10692919
    Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: June 23, 2020
    Assignee: SONY CORPORATION
    Inventor: Ryoto Yoshita
  • Publication number: 20200083275
    Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.
    Type: Application
    Filed: November 18, 2019
    Publication date: March 12, 2020
    Inventor: RYOTO YOSHITA
  • Publication number: 20200035724
    Abstract: The present technology relates to an imaging element capable of reducing PLS while suppressing degradation of sensitivity. The imaging element includes, within a pixel: a semiconductor substrate; a photoelectric conversion unit formed in the semiconductor substrate; a first charge storage unit that stores a charge generated by the photoelectric conversion unit; and a first transfer gate unit formed on an opposite surface of the semiconductor substrate on an opposite side of a light incident surface and used for transfer of a charge from the photoelectric conversion unit to the first charge storage unit. The first transfer gate unit includes a first electrode embedded in a first trench formed in the semiconductor substrate from the opposite surface of the semiconductor substrate. The photoelectric conversion unit includes: the first electrode; and a second electrode surrounding at least a portion of a periphery of the first electrode. The present technology can be applied to a CMOS image sensor, for example.
    Type: Application
    Filed: February 19, 2018
    Publication date: January 30, 2020
    Inventors: TAKASHI MACHIDA, RYOTO YOSHITA
  • Publication number: 20200029037
    Abstract: A photoelectric converter generates a charge corresponding to the exposure amount during an exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the transfer.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 23, 2020
    Inventors: YOSHIMICHI KUMAGAI, TAKASHI ABE, KAZUYOSHI YAMASHITA, RYOTO YOSHITA
  • Publication number: 20200013808
    Abstract: The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge, and a holding part that holds a charge transferred from the photoelectric conversion part are provided, the photoelectric conversion part and the holding part are formed in a semiconductor substrate having a predetermined thickness, and the holding part is formed with a thickness that is half or less of the predetermined thickness. A charge capturing region that captures a charge is further provided on a light incident side of a region where the holding part is formed. A light shielding part that shields light is formed between the photoelectric conversion part and the charge capturing region. The present technology is applicable to an imaging device.
    Type: Application
    Filed: March 9, 2018
    Publication date: January 9, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshimichi KUMAGAI, Takashi ABE, Ryoto YOSHITA, Ikuhiro YAMAMURA
  • Publication number: 20200013825
    Abstract: The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge; a holding part that holds a charge transferred from the photoelectric conversion part; and a light shielding part that shields light between the photoelectric conversion part and the holding part are provided. The photoelectric conversion part, the holding part, and the light shielding part are formed in a semiconductor substrate. The light shielding part of a transfer region that transfers the charge from the photoelectric conversion part to the holding part is formed as a non-penetrating light shielding part that does not penetrate the semiconductor substrate. The light shielding part other than the transfer region is formed as a penetrating light shielding part that penetrates the semiconductor substrate. The present technology is applicable to an imaging device.
    Type: Application
    Filed: March 9, 2018
    Publication date: January 9, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshimichi KUMAGAI, Takashi ABE, Ryoto YOSHITA
  • Patent number: 10497740
    Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: December 3, 2019
    Assignee: SONY CORPORATION
    Inventor: Ryoto Yoshita
  • Publication number: 20190341418
    Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.
    Type: Application
    Filed: July 12, 2019
    Publication date: November 7, 2019
    Applicant: Sony Corporation
    Inventors: Rena Suzuki, Hiroki Tojinbara, Ryoto Yoshita, Yoichi Ueda
  • Patent number: 10469783
    Abstract: To transfer all charges retained in a charge retention region. The photoelectric converter generates a charge corresponding to the exposure amount during a predetermined exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the generated-charge transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the retained-charge transfer.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: November 5, 2019
    Assignee: SONY CORPORATION
    Inventors: Yoshimichi Kumagai, Takashi Abe, Kazuyoshi Yamashita, Ryoto Yoshita
  • Publication number: 20190305031
    Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.
    Type: Application
    Filed: June 18, 2019
    Publication date: October 3, 2019
    Inventor: RYOTO YOSHITA
  • Patent number: 10367027
    Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: July 30, 2019
    Assignee: Sony Corporation
    Inventors: Rena Suzuki, Hiroki Tojinbara, Ryoto Yoshita, Yoichi Ueda
  • Patent number: 10367026
    Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: July 30, 2019
    Assignee: SONY CORPORATION
    Inventor: Ryoto Yoshita
  • Publication number: 20190148449
    Abstract: The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.
    Type: Application
    Filed: December 20, 2018
    Publication date: May 16, 2019
    Inventor: RYOTO YOSHITA
  • Publication number: 20190014278
    Abstract: To transfer all charges retained in a charge retention region. The photoelectric converter generates a charge corresponding to the exposure amount during a predetermined exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the generated-charge transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the retained-charge transfer.
    Type: Application
    Filed: November 30, 2016
    Publication date: January 10, 2019
    Inventors: YOSHIMICHI KUMAGAI, TAKASHI ABE, KAZUYOSHI YAMASHITA, RYOTO YOSHITA