Abstract: Disclosed is a method of etching a substrate having a layered structure in which a photoresist mask with a pattern, a coating film made of silicon oxide, and an organic film are laminated in that order from the top. Before etching the coating film of silicon oxide, a deposit is deposited on the photoresist mask by using plasma generated from a hydrocarbon gas such as CH4 gas so as to narrow the size of openings in the pattern of the photoresist mask. The pattern of the photoresist mask is well transferred to the organic film through the coating film, and a pattern with openings having a high aspect ratio can be formed in the organic film and toppling of the pattern in the organic film can be prevented. The organic film with the transferred pattern is used as an etch mask for etching the underlying layer.

Abstract: Disclosed is a method of etching a substrate having a layered structure in which a photoresist mask with a pattern, a coating film made of silicon oxide, and an organic film are laminated in that order from the top. Before etching the coating film of silicon oxide, a deposit is deposited on the photoresist mask by using plasma generated from a hydrocarbon gas such as CH4 gas so as to narrow the size of openings in the pattern of the photoresist mask. The pattern of the photoresist mask is well transferred to the organic film through the coating film, and a pattern with openings having a high aspect ratio can be formed in the organic film and toppling of the pattern in the organic film can be prevented. The organic film with the transferred pattern is used as an etch mask for etching the underlying layer.

Abstract: A composite pitch pattern of an artificial waveform of a composite sound indicating characters is produced according to a general pitch pattern producing model, and a pitch pattern of a VCV phoneme-chain waveform of each of VCV phoneme-chains corresponding to the characters is produced from an actual voice sample. Each VCV phoneme-chain composed of a preceding vowel, a consonant and a succeeding vowel has a pitch fine structure and a pitch fluctuation. Thereafter, an overall inclination of the pitch pattern of each VCV phoneme-chain waveform is adjusted to that of a portion of the composite pitch pattern corresponding to the-same VCV phoneme-chain to overlap transitional portions of preceding and succeeding vowels in a changed pitch pattern of each VCV phoneme-chain waveform with those in the corresponding portion of the composite pitch pattern.