Patents by Inventor Ryou Nakabayashi

Ryou Nakabayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film
    Patent number: 7365948
    Abstract: An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.
    Type: Grant
    Filed: July 21, 2004
    Date of Patent: April 29, 2008
    Assignee: Alps Electric Co., Ltd
    Inventors: Ryou Nakabayashi, Eiji Umetsu, Naoya Hasegawa
  • Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film
    Publication number: 20080088987
    Abstract: An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.
    Type: Application
    Filed: July 6, 2007
    Publication date: April 17, 2008
    Inventors: Ryou Nakabayashi, Eiji Umetsu, Naoya Hasegawa
  • EXCHANGE-COUPLED FILM, METHOD FOR MAKING EXCHANGE-COUPLED FILM, AND MAGNETIC SENSING ELEMENT INCLUDING EXCHANGE-COUPLED FILM
    Publication number: 20080068767
    Abstract: An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.
    Type: Application
    Filed: November 21, 2007
    Publication date: March 20, 2008
    Inventors: Ryou Nakabayashi, Eiji Umetsu, Naoya Hasegawa
  • Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor
    Patent number: 7312959
    Abstract: At two sides of a multilayer film including a free magnetic layer, a first non-magnetic material layer, and a fixed magnetic layer, extension portions extending from the fixed magnetic layer are formed. At lower sides of the extension portions, a pair of first antiferromagnetic layers is formed with a space therebetween in a track width direction, and in addition, at upper sides of the extension portions, a pair of second antiferromagnetic layers is formed with a space therebetween in the track width direction.
    Type: Grant
    Filed: September 21, 2004
    Date of Patent: December 25, 2007
    Assignee: Alps Electric Co., Ltd.
    Inventors: Ryou Nakabayashi, Eiji Umetsu, Naoya Hasegawa
  • Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor
    Publication number: 20050068694
    Abstract: At two sides of a multilayer film including a free magnetic layer, a first non-magnetic material layer, and a fixed magnetic layer, extension portions extending from the fixed magnetic layer are formed. At lower sides of the extension portions, a pair of first antiferromagnetic layers is formed with a space therebetween in a track width direction, and in addition, at upper sides of the extension portions, a pair of second antiferromagnetic layers is formed with a space therebetween in the track width direction.
    Type: Application
    Filed: September 21, 2004
    Publication date: March 31, 2005
    Inventors: Ryou Nakabayashi, Eiji Umetsu, Naoya Hasegawa
  • Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film
    Publication number: 20050024793
    Abstract: An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.
    Type: Application
    Filed: July 21, 2004
    Publication date: February 3, 2005
    Inventors: Ryou Nakabayashi, Eiji Umetsu, Naoya Hasegawa