Abstract: There is provided a substrate support pedestal including: a first metallic member having a recess formed in an upper portion of the first metallic member; a second metallic member provided on the first metallic member and configured to seal the recess; a substrate support part provided on the second metallic member; and one or more thermoelectric elements disposed in the recess, wherein the recess is filled with a heat transfer medium.

Abstract: A plasma processing apparatus includes a processing vessel, an upper structure that is provided on an upper portion of the processing vessel and generates plasma in a lower region thereof, a structure holding ring that is fixed around the upper structure, an arm that supports the ring and is movable up and down, a screw (including a bolt) that is fixed to one of the ring and the arm, and has a tip end abutting the other, and a pin that is provided in the ring or the arm, and passes through a hole for restricting horizontal movement of the ring.

Abstract: A substrate processing apparatus includes an inner wall formed of a heat conductive material, a quartz liner that covers the inner wall, and a cooling unit that cools the inner wall. A gap is formed between the inner wall and the quartz liner, and a sealing member is provided in the gap to seal the gap. The gap is filled with a heat conductive medium.

Abstract: A plasma generation unit according to an exemplary embodiment includes a dielectric window, a slot plate, and a probe group. The slot plate is provided on the dielectric window. The probe group includes a plurality of probes that are electric conductors, is provided in the dielectric window, and is used for detection of a physical quantity around the dielectric window. The dielectric window extends along the slot plate. Each of the plurality of probes is disposed on a circumference of a first circle centered on a reference position of the dielectric window, when viewed from above the dielectric window.

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract: A plasma processing apparatus includes a processing vessel, an upper structure that is provided on an upper portion of the processing vessel and generates plasma in a lower region thereof, a structure holding ring that is fixed around the upper structure, an arm that supports the ring and is movable up and down, a screw (including a bolt) that is fixed to one of the ring and the arm, and has a tip end abutting the other, and a pin that is provided in the ring or the arm, and passes through a hole for restricting horizontal movement of the ring.

Abstract: A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (Tmeas) according to a measurement window temperature (Tw), the function (f) being computed based on the correction target temperature (Tmeas) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (Tobj) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (Tw) corresponding to a temperature of the measurement window.

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract: A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (Tmeas) according to a measurement window temperature (Tw), the function (f) being computed based on the correction target temperature (Tmeas) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (Tobj) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (Tw) corresponding to a temperature of the measurement window.

Abstract: A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.

Abstract: A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Abstract: The processing device includes a processing chamber which receives the substrate, a depressurization mechanism which depressurizes the interior of the processing chamber, a stage which holds the substrate and is arranged in the processing chamber, a linear movement mechanism which linearly moves the stage and is arranged in the processing chamber, and a parallel link mechanism which prevents the rotation of the stage and is arranged in the processing chamber. A space portion isolated from the internal atmosphere of the processing chamber is formed in the stage. An air communication path that allows the space portion to communicate with the external atmosphere of the processing chamber is formed in the parallel link mechanism.

Abstract: A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Abstract: A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.