Patents by Inventor Ryouhei Kitao

Ryouhei Kitao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Carbon containing silicon oxide film having high ashing tolerance and adhesion
    Patent number: 7582970
    Abstract: A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond in the carbon containing silicon oxide film. The proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.
    Type: Grant
    Filed: July 28, 2008
    Date of Patent: September 1, 2009
    Assignee: NEC Electronics Corporation
    Inventors: Sadayuki Ohnishi, Kouichi Owto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao, Youichi Sasaki
  • CARBON CONTAINING SILICON OXIDE FILM HAVING HIGH ASHING TOLERANCE AND ADHESION
    Publication number: 20080290522
    Abstract: A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond in the carbon containing silicon oxide film. The proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.
    Type: Application
    Filed: July 28, 2008
    Publication date: November 27, 2008
    Applicant: NEC ELECTRONICS CORPORATION
    Inventors: Sadayuki Ohnishi, Kouichi Owto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao, Youichi Sasaki
  • Carbon containing silicon oxide film having high ashing tolerance and adhesion
    Patent number: 7420279
    Abstract: An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm?1) to Si—CH3 bond (1270 cm?1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: September 2, 2008
    Assignee: NEC Electronics Corporation
    Inventors: Sadayuki Ohnishi, Kouichi Ohto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao, Youichi Sasaki
  • Carbon containing silicon oxide film having high ashing tolerance and adhesion
    Publication number: 20060255466
    Abstract: An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm?1) to Si—CH3 bond (1270 cm?1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.
    Type: Application
    Filed: June 28, 2006
    Publication date: November 16, 2006
    Inventors: Sadayuki Ohnishi, Kouichi Ohto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao, Youichi Sasaki
  • Carbon containing silicon oxide film having high ashing tolerance and adhesion
    Patent number: 7102236
    Abstract: An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm?1) to Si—CH3 bond (1270 cm?1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.
    Type: Grant
    Filed: January 29, 2004
    Date of Patent: September 5, 2006
    Assignee: NEC Electronics Corporation
    Inventors: Sadayuki Ohnishi, Kouichi Ohto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao, Youichi Sasaki
  • Carbon containing silicon oxide film having high ashing tolerance and adhesion
    Publication number: 20050006665
    Abstract: An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm?1) to Si—CH3 bond (1270 cm?1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.
    Type: Application
    Filed: January 29, 2004
    Publication date: January 13, 2005
    Inventors: Sadayuki Ohnishi, Kouichi Ohto, Tatsuya Usami, Noboru Morita, Kouji Arita, Ryouhei Kitao, Youichi Sasaki