Abstract: An electrical power conversion unit is provided with: a circuit connecting part which includes a positive electrode conductor, a negative electrode conductor, and an alternating current conductor; a power semiconductor module connected to a specific side of the circuit connecting part; a fin that extends to the opposite side of the circuit connecting part with respect to the power semiconductor module; and a capacitor disposed at one end in the lengthwise direction of the circuit connecting part. A space in which a cooling fan is disposed is formed by an extending part and the fin, when the extending part is defined as a region, of the circuit connecting part, other than the portion at which the fin projects to the circuit connecting part, such region including one end that is opposite, via the fin, the one end where the capacitor is present.

Abstract: A cooling structure of a heating element includes: the heating element having at least one cooling surface from which a plurality of pin fins project; a heat receiving plate which has a shape complying with the cooling surface and in which holes are formed at positions facing each pin fin, each pin fin being movably inserted into the holes; a cooler which has a pair of clamping members that sandwich therebetween the heating element and the heat receiving plate while pressing the heating element and the heat receiving plate, and which cools the heat receiving plate; and a space securing part which is provided on the heat receiving plate and suppresses a distance between the pair of clamping members so as not to apply a pressing force by the clamping members to the heating element.

Abstract: A cooling structure of a heating element includes: the heating element having at least one cooling surface from which a plurality of pin fins project; a heat receiving plate which has a shape complying with the cooling surface and in which holes are formed at positions facing each pin fin, each pin fin being movably inserted into the holes; a cooler which has a pair of clamping members that sandwich therebetween the heating element and the heat receiving plate while pressing the heating element and the heat receiving plate, and which cools the heat receiving plate; and a space securing part which is provided on the heat receiving plate and suppresses a distance between the pair of clamping members so as not to apply a pressing force by the clamping members to the heating element.

Abstract: A cooling structure is provided. The cooling structure includes cooling surfaces on two confronting side surfaces; a plurality of double-sided-cooling power module, the heat receiving block pinching the heating elements arranged in a vertical direction on the confronting side surfaces, first and second cooling devices, each including the heat radiating fins, disposed above the heating elements, extending in a horizontal direction, and a pressure contacting part configured to contact the heating elements and the receiving block with a pressure force. The heat radiation fins are blown from a side of the electric terminal.

Abstract: A cooling structure of a heating element includes: the heating element having at least one cooling surface from which a plurality of pin fins project; a heat receiving plate which has a shape complying with the cooling surface and in which holes are formed at positions facing each pin fin, each pin fin being movably inserted into the holes; a cooler which has a pair of clamping members that sandwich therebetween the heating element and the heat receiving plate while pressing the heating element and the heat receiving plate, and which cools the heat receiving plate; and a space securing part which is provided on the heat receiving plate and suppresses a distance between the pair of clamping members so as not to apply a pressing force by the clamping members to the heating element.

Abstract: A cooling structure of a heating element includes: the heating element having at least one cooling surface from which a plurality of pin fins project; a heat receiving plate which has a shape complying with the cooling surface and in which holes are formed at positions facing each pin fin, each pin fin being movably inserted into the holes; a cooler which has a pair of clamping members that sandwich therebetween the heating element and the heat receiving plate while pressing the heating element and the heat receiving plate, and which cools the heat receiving plate; and a space securing part which is provided on the heat receiving plate and suppresses a distance between the pair of clamping members so as not to apply a pressing force by the clamping members to the heating element.

Abstract: A cooling structure is provided. The cooling structure includes cooling surfaces on two confronting side surfaces; a plurality of double-sided-cooling power module, the heat receiving block pinching the heating elements arranged in a vertical direction on the confronting side surfaces, first and second cooling devices, each including the heat radiating fins, disposed above the heating elements, extending in a horizontal direction, and a pressure contacting part configured to contact the heating elements and the receiving block with a pressure force. The heat radiation fins are blown from a side of the electric terminal.

Abstract: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

Abstract: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

Abstract: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

Abstract: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

Abstract: A solid-state image sensing device includes: a plurality of unit pixels 21 arranged in rows and columns each of which outputs a pixel signal according to incident light; and a plurality of floating diffusion portions 22 each of which receives the pixel signals. Each of the floating diffusion portions 22 is shared by two unit pixels 21 which are respectively arranged in adjacent rows and which are respectively adjacent columns.

Abstract: A solid-state imaging device has a plurality of photoelectric conversion elements two dimensionally arrayed in an imaging area, a light shielding film that regulates the amount of external light incident on the photoelectric conversion elements by a wiring pattern, a wiring layer placed between the light shielding film and the photoelectric conversion elements, and a plurality of contacts electrically connecting the light shielding film with the wiring layer in a lamination direction. The shape of the light shielding film is defined by a plurality of first figures overlapping with a second figure, each first figure being placed over a different contact in plan view, and the second figure having a plurality of apertures each corresponding to a different photoelectric conversion element.

Abstract: A solid-state image sensing device includes: a plurality of unit pixels 21 arranged in rows and columns each of which outputs a pixel signal according to incident light; and a plurality of floating diffusion portions 22 each of which receives the pixel signals. Each of the floating diffusion portions 22 is shared by two unit pixels 21 which are respectively arranged in adjacent rows and which are respectively adjacent columns.

Abstract: A solid-state imaging device has a plurality of photoelectric conversion elements two dimensionally arrayed in an imaging area, a light shielding film that regulates the amount of external light incident on the photoelectric conversion elements by a wiring pattern, a wiring layer placed between the light shielding film and the photoelectric conversion elements, and a plurality of contacts electrically connecting the light shielding film with the wiring layer in a lamination direction. The shape of the light shielding film is defined by a plurality of first figures overlapping with a second figure, each first figure being placed over a different contact in plan view, and the second figure having a plurality of apertures each corresponding to a different photoelectric conversion element.

Abstract: Pixels have a photodiode 1, a transfer gate electrode 2 for transferring charges accumulated in the photodiode 1, a floating diffusion section 3 for accumulating the charge transferred by the transfer gate electrode 2, an amplification transistor 15 in which a gate electrode is connected to the floating diffusion section 3, and a reset transistor 14 for resetting a potential of the floating diffusion section 5. A gate length of the amplification transistor 15 is shorter than a gate length of a transistor, among transistors comprising the peripheral circuitry region, whose gate insulating film thickness is a same as a gate insulating film thickness of the amplification transistor 15 and which has a minimum gate length.

Abstract: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.