Patents by Inventor Ryouichi Isohata

Ryouichi Isohata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6054736
    Abstract: A semiconductor device of the present invention comprises: a semiconductor substrate of a first conductive type; a gate electrode formed on the semiconductor substrate; a first semiconductor region of a second conductive type different from the first conductive type, the first semiconductor region being formed on the semiconductor substrate in one of both side regions of the gate electrode so as to be adjacent to the gate electrode; a second semiconductor region of the second conductive type formed on the semiconductor substrate in the other region of the both side regions of the gate electrode so as to be adjacent to the gate electrode; a third semiconductor region of the second conductive type formed in the one region so as to be isolated from the first semiconductor region and to be spaced from the second semiconductor region by a greater distance than that between the first and third semiconductor regions; a connecting portion for connecting the first semiconductor region to the third semiconductor region
    Type: Grant
    Filed: May 13, 1998
    Date of Patent: April 25, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Shigehara, Masanori Kinugasa, Akira Takiba, Ryouichi Isohata