Abstract: A solid-state image sensing apparatus including a solid-state image sensing device and a signal processing circuit. The solid-state image sensing device includes: a vertical transfer unit, composed of transfer columns corresponding to columns of the light-to-electric conversion elements, operable to transfer, in a vertical direction, signal charges read out from the light-to-electric conversion elements; a horizontal transfer unit operable to receive the signal charges from the vertical transfer unit and transfer them in a horizontal direction. The signal processing circuit converts the signal charges from the horizontal transfer unit into pixel data, and rearranges it into a two-dimensional array. In the rearrangement, the signal processing circuit, per transfer of one piece of pixel data, cyclically selects a line memory out of three line memories, writes a piece of pixel data into the selected line memory, or reads a row of pixel data from the selected line memory.

Abstract: A solid-state image sensing apparatus including a solid-state image sensing device and a signal processing circuit. The solid-state image sensing device includes: a vertical transfer unit, composed of transfer columns corresponding to columns of the light-to-electric conversion elements, operable to transfer, in a vertical direction, signal charges read out from the light-to-electric conversion elements; a horizontal transfer unit operable to receive the signal charges from the vertical transfer unit and transfer them in a horizontal direction. The signal processing circuit converts the signal charges from the horizontal transfer unit into pixel data, and rearranges it into a two-dimensional array. In the rearrangement, the signal processing circuit, per transfer of one piece of pixel data, cyclically selects a line memory out of three line memories, writes a piece of pixel data into the selected line memory, or reads a row of pixel data from the selected line memory.

Abstract: A solid state image sensor comprising a matrix of photosensitive elements adapted to accumulate signal charges corresponding to at least two different aspect ratios, a plurality of vertical shift registers disposed adjacent to columns of the photosensitive elements for a vertical transfer of the signal charges and a plurality of horizontal shift registers corresponding to the respective aspect ratios and disposed in parallel with each other for a horizontal transfer of the signal charges from the vertical shift registers. As a horizontal shift register exclusive to each aspect ratio is provided in the above manner, it is no longer necessary to superimpose the signal outputs of a plurality of buffer amplifiers so that a picture signal corresponding to the desired aspect ratio can be easily read out.

Abstract: The solid state image sensor of the invention comprises a plurality of photosensitive elements arranged in a matrix form, a vertical shift register disposed adjacent each column of the photosensitive elements and adapted to vertically transfer signal charges read from the corresponding photosensitive elements, a storage region for storing signal charges transferred by the vertical shift register and a horizontal shift register adapted to horizontally transfer signal charges read from the storage region, the above vertical shift register comprising units of 2n (n is a positive integer of not less than 3) transfer electrodes which are respectively independent.