Abstract: The present invention aims to provide a working machine capable of improving the responsiveness of the driving speed to the target speed of the hydraulic actuator. For this purpose, the controller calculates the target speed of the boom according to the input amount of the operation lever, calculates the actuator target flow rate based on the target speed, calculates the pump target flow rate based on the actuator target flow rate, and based on the input amount of the operation lever, the output value of the inertia measuring device, and the meter-out pressure of the actuator, calculates the target meter-in pressure, which is the target value of the actuator's meter-in pressure, calculates the difference between the driving speed of the boom and the target speed as a speed error, calculates the difference between the meter-in pressure and the target meter-in pressure as a pressure error, and corrects the pump target flow rate according to the speed error and the pressure error.

Abstract: The present invention provides a work machine that can improve the accuracy of control to limit the operation of the work device within a predetermined range. The excavator includes a control valve that controls the flow of pressure oil to the boom hydraulic cylinder, multiple pilot solenoid valves that generate and output pilot pressure to operate the control valve, a controller with a limiting function that controls the multiple pilot solenoid valves to restrict the operation of the work device to a predetermined range, anti-drop valves with an anti-drop function to prevent the boom from falling, and solenoid valves that output release pressure to release the anti-drop function of the anti-drop valves. The controller calculates the release pressure for the anti-drop valves based on information related to the limiting function and controls the solenoid valves to output the calculated release pressure to the anti-drop valves as a signal to release the anti-drop function.

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers that alternate along a vertical direction, memory openings vertically extending through the alternating stack in a memory array region, memory opening fill structures located in the memory openings and including a respective vertical stack of memory elements and a respective vertical semiconductor channel, and layer contact via structures contacting the electrically conductive layers. Each electrically conductive layer within a subset of the electrically conductive layers includes a respective tab portion that laterally protrudes away from the memory array region relative to a respective underlying vertically-neighboring electrically conductive layer and relative to a respective overlying vertically-neighboring electrically conductive layer, and a subset of the layer contact via structures contacts a top surface of a respective one of the tab portions.

Abstract: The present invention aims to provide a working machine capable of improving the responsiveness of the driving speed to the target speed of the hydraulic actuator. For this purpose, the controller calculates the target speed of the boom according to the input amount of the operation lever, calculates the actuator target flow rate based on the target speed, calculates the pump target flow rate based on the actuator target flow rate, and based on the input amount of the operation lever, the output value of the inertia measuring device, and the meter-out pressure of the actuator, calculates the target meter-in pressure, which is the target value of the actuator's meter-in pressure, calculates the difference between the driving speed of the boom and the target speed as a speed error, calculates the difference between the meter-in pressure and the target meter-in pressure as a pressure error, and corrects the pump target flow rate according to the speed error and the pressure error.

Abstract: A controller of a work machine computes a requested velocity of a hydraulic actuator based on an operation signal, computes a first estimated velocity of the hydraulic actuator based on a sensed value of a first sensing device that senses motion information of a driven member, computes a second estimated velocity of the hydraulic actuator based on a sensed value of a second sensing device that senses a flow rate of a directional control valve, computes an arbitrated velocity by arbitrating the first estimated velocity and the second estimated velocity according to a driving state of the hydraulic actuator, and controls the directional control valve based on a deviation between the requested velocity and the arbitrated velocity.

Abstract: A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. Bridge structures are formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the bridge structure are present within the backside trenches.

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening. The memory opening fill structure includes a memory film and a vertical semiconductor channel. The memory film includes a tunneling dielectric layer, a charge storage layer that laterally surrounds the tunneling dielectric layer, a dielectric metal oxide blocking dielectric layer that laterally surrounds the charge storage layer and contacts the vertical semiconductor channel, and a silicon oxide blocking dielectric layer that laterally surrounds the dielectric metal oxide blocking dielectric layer and contacts the vertical semiconductor channel.

Abstract: A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. A set of one or more bridge structures including a doped semiconductor material is formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the sets of at least one bridge structure are present within the backside trenches.

Abstract: A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming a memory opening extending through the alternating stack, forming a sacrificial memory opening fill structure in the memory opening, replacing the sacrificial material layers with electrically conductive layers, removing the sacrificial memory opening fill structure selective to the electrically conductive layers, and forming a memory opening fill structure the memory opening after replacing the sacrificial material layers with electrically conductive layers and after removing the sacrificial memory opening fill structure. The memory opening fill structure includes a memory film and a vertical semiconductor channel.

Abstract: A controller of a work machine computes a requested velocity of a hydraulic actuator based on an operation signal, computes a first estimated velocity of the hydraulic actuator based on a sensed value of a first sensing device that senses motion information of a driven member, computes a second estimated velocity of the hydraulic actuator based on a sensed value of a second sensing device that senses a flow rate of a directional control valve, computes an arbitrated velocity by arbitrating the first estimated velocity and the second estimated velocity according to a driving state of the hydraulic actuator, and controls the directional control valve based on a deviation between the requested velocity and the arbitrated velocity.

Abstract: There is provided a construction machine that draws attention from the surroundings of the machine body when the prime mover is started and that can have the operator reliably confirm the surroundings of the machine body before the prime mover is started. An engine start control section 23 of a main controller 22 inhibits an engine 18 from starting when a key switch 12 is operated while a horn switch 21 is not operated, inhibits the engine 18 from starting when the key switch 12 is operated for the duration until a first set time T1 elapses after the operation of the horn switch 21 has been finished, permits the engine 18 to start in a case the key switch 12 is operated for the duration until a second set time T2 elapses after the first set time T1 has elapsed, and inhibits the engine 18 again from starting when the key switch 12 is operated if the engine 18 is not started for the duration until the second set time T2 elapses.

Abstract: A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. Bridge structures are formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the bridge structure are present within the backside trenches.

Abstract: A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. A set of one or more bridge structures including a doped semiconductor material is formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the sets of at least one bridge structure are present within the backside trenches.

Abstract: A three-dimensional memory device includes a first word-line region including a first alternating stack of first word lines and continuous insulating layers, first memory stack structures vertically extending through the first alternating stack, a second word-line region comprising a second alternating stack of second word lines and the continuous insulating layers, second memory stack structures vertically extending through the second alternating stack, plural dielectric separator structures located between the first word-line region and the second word-line region, and at least one bridge region located between the plural dielectric separator structures and between the between the first word-line region and the second word-line region. The continuous insulating layers extend through the at least one bridge region between the first alternating stack in the first word-line region and the second alternating stack in the second word-line region.

Abstract: A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming a memory opening extending through the alternating stack, forming a sacrificial memory opening fill structure in the memory opening, replacing the sacrificial material layers with electrically conductive layers, removing the sacrificial memory opening fill structure selective to the electrically conductive layers, and forming a memory opening fill structure the memory opening after replacing the sacrificial material layers with electrically conductive layers and after removing the sacrificial memory opening fill structure. The memory opening fill structure includes a memory film and a vertical semiconductor channel.

Abstract: A three-dimensional memory device includes a first word-line region including a first alternating stack of first word lines and continuous insulating layers, first memory stack structures vertically extending through the first alternating stack, a second word-line region comprising a second alternating stack of second word lines and the continuous insulating layers, second memory stack structures vertically extending through the second alternating stack, plural dielectric separator structures located between the first word-line region and the second word-line region, and at least one bridge region located between the plural dielectric separator structures and between the between the first word-line region and the second word-line region. The continuous insulating layers extend through the at least one bridge region between the first alternating stack in the first word-line region and the second alternating stack in the second word-line region.

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening. The memory opening fill structure includes a memory film and a vertical semiconductor channel. The memory film includes a tunneling dielectric layer, a charge storage layer that laterally surrounds the tunneling dielectric layer, a dielectric metal oxide blocking dielectric layer that laterally surrounds the charge storage layer and contacts the vertical semiconductor channel, and a silicon oxide blocking dielectric layer that laterally surrounds the dielectric metal oxide blocking dielectric layer and contacts the vertical semiconductor channel.

Abstract: There is provided a construction machine that draws attention from the surroundings of the machine body when the prime mover is started and that can have the operator reliably confirm the surroundings of the machine body before the prime mover is started. An engine start control section 23 of a main controller 22 inhibits an engine 18 from starting when a key switch 12 is operated while a horn switch 21 is not operated, inhibits the engine 18 from starting when the key switch 12 is operated for the duration until a first set time T1 elapses after the operation of the horn switch 21 has been finished, permits the engine 18 to start in a case the key switch 12 is operated for the duration until a second set time T2 elapses after the first set time T1 has elapsed, and inhibits the engine 18 again from starting when the key switch 12 is operated if the engine 18 is not started for the duration until the second set time T2 elapses.

Abstract: First memory openings are formed through a first alternating stack of first insulating layers and first spacer material layers. Each first memory opening is filled with a first memory film, a sacrificial dielectric liner, and a first-tier opening fill material portion. Second memory openings are formed through a second alternating stack of second insulating layers and second spacer material layers. A second memory film is formed in each second memory opening. The first-tier opening fill material portions are removed selective to the sacrificial dielectric liners. The sacrificial dielectric liners are removed selective to the second memory films and the first memory films. A vertical semiconductor channel can be formed on each vertical stack of a first memory film and a second memory film.

Abstract: A method is provided that includes forming a transistor by forming a gate disposed in a first direction above a substrate, the gate including a first bridge portion and a second bridge portion, forming the first bridge portion extending in the first direction and disposed near a top of the gate, and forming the second bridge portion extending in the first direction and disposed near a bottom of the gate.