Patents by Inventor Ryousuke OOKAWA

Ryousuke OOKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with vertical gate and method of manufacturing the same
    Patent number: 9853126
    Abstract: A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the trench increases on the substrate surface on both sides of the trench. First and second source regions are formed in a self-alignment manner by introduction of impurities through the first insulating film.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: December 26, 2017
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Shuji Mizokuchi, Ryousuke Ookawa, Naoki Sato
  • SEMICONDUCTOR DEVICE WITH VERTICAL GATE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160204248
    Abstract: A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the trench increases on the substrate surface on both sides of the trench. First and second source regions are formed in a self-alignment manner by introduction of impurities through the first insulating film.
    Type: Application
    Filed: March 18, 2016
    Publication date: July 14, 2016
    Inventors: SHUJI MIZOKUCHI, RYOUSUKE OOKAWA, NAOKI SATO
  • Semiconductor device with vertical gate and method of manufacturing the same
    Patent number: 9324837
    Abstract: A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the trench increases on the substrate surface on both sides of the trench. First and second source regions are formed in a self-alignment manner by introduction of impurities through the first insulating film.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: April 26, 2016
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Shuji Mizokuchi, Ryousuke Ookawa, Naoki Sato
  • SEMICONDUCTOR DEVICE WITH VERTICAL GATE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150011066
    Abstract: A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the trench increases on the substrate surface on both sides of the trench. First and second source regions are formed in a self-alignment manner by introduction of impurities through the first insulating film.
    Type: Application
    Filed: September 26, 2014
    Publication date: January 8, 2015
    Inventors: Shuji MIZOKUCHI, Ryousuke OOKAWA, Naoki SATO