Patents by Inventor Ryousuke Shimao

Ryousuke Shimao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8962163
    Abstract: The present invention provides an aluminum alloy component having an anodic oxide film less causing cracks and high in surface smoothness, which is capable of reducing abrasion of a cutting tool regardless of the excellent machinability. The aluminum alloy component (1) has an anodic oxide film formed on a surface of a base metal of an aluminum alloy. The aluminum alloy consists of Fe: 0.5 to 2 mass %, Cu: 0.35 to 0.6 mass %, Mg: 0.35 to 1.3 mass %, Si: 0.2 to 1.3 mass %, Cr: 0.005 to 0.3 mass %, Mn: 0.01 to 0.3 mass %, Ti: 0.005 to 0.1 mass %, and the balance being inevitable impurities, wherein Zn is controlled to be less than 0.25 mass %, and wherein Al—Fe series crystals and Al—Fe—Si series crystals having a maximum grain diameter of 30 ?m or less exist in the anodic oxide film in a dispersed manner with an average center-to-center distance of 10 to 100 ?m, and a percentage of a total occupied area of the Al—Fe series crystals and Al—Fe—Si series crystals in the anodic oxide film is 5% or more.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: February 24, 2015
    Assignee: Showa Denko K.K.
    Inventors: Ryousuke Shimao, Shigekazu Nagai
  • Publication number: 20120298513
    Abstract: The present invention provides an aluminum alloy component having an anodic oxide film less causing cracks and high in surface smoothness, which is capable of reducing abrasion of a cutting tool regardless of the excellent machinability. The aluminum alloy component (1) has an anodic oxide film formed on a surface of a base metal of an aluminum alloy. The aluminum alloy consists of Fe: 0.5 to 2 mass %, Cu: 0.35 to 0.6 mass %, Mg: 0.35 to 1.3 mass %, Si: 0.2 to 1.3 mass %, Cr: 0.005 to 0.3 mass %, Mn: 0.01 to 0.3 mass %, Ti: 0.005 to 0.1 mass %, and the balance being inevitable impurities, wherein Zn is controlled to be less than 0.25 mass %, and wherein Al—Fe series crystals and Al—Fe—Si series crystals having a maximum grain diameter of 30 ?m or less exist in the anodic oxide film in a dispersed manner with an average center-to-center distance of 10 to 100 ?m, and a percentage of a total occupied area of the Al—Fe series crystals and Al—Fe—Si series crystals in the anodic oxide film is 5% or more.
    Type: Application
    Filed: December 17, 2010
    Publication date: November 29, 2012
    Applicant: SHOWA DENKO K.K.
    Inventors: Ryousuke Shimao, Shigekazu Nagai